公开(公告)号：US07261981B2

公开(公告)日：2007-08-28

申请号：US10707778

申请日：2004-01-12

申请人： Mark A. Lavin ,  Lars W. Liebmann ,  Scott M. Mansfield ,  Maharaj Mukherjee ,  Zengqin Zhao

发明人： Mark A. Lavin ,  Lars W. Liebmann ,  Scott M. Mansfield ,  Maharaj Mukherjee ,  Zengqin Zhao

IPC分类号： G03F1/00

CPC分类号： G03F1/36

摘要： A method is disclosed for providing associated shapes of an optical lithography mask in relation to predetermined main shapes of the mask. The method includes generating simplified layout patterns from the predetermined main shapes of the mask. Such layout patterns are generated by eliminating detail of the main shapes which leads to unmanufacturable associated shapes while preserving geometrically relevant shape information. The associated shapes are then generated relative to the simplified mask patterns.

摘要翻译： 公开了一种相对于掩模的预定主要形状提供光刻掩模的相关形状的方法。 该方法包括从掩模的预定主要形状生成简化的布局图案。 通过消除导致不可制造的相关形状的主要形状的细节来产生这种布局图案，同时保留几何相关的形状信息。 然后相对于简化的掩模图案生成相关联的形状。

公开(公告)号：US06996797B1

公开(公告)日：2006-02-07

申请号：US10904600

申请日：2004-11-18

申请人： Lars W. Liebmann ,  James A. Culp ,  Ioana C. Graur ,  Maharaj Mukherjee

发明人： Lars W. Liebmann ,  James A. Culp ,  Ioana C. Graur ,  Maharaj Mukherjee

IPC分类号： G06F17/50

CPC分类号： G06F17/5081 ,  G03F1/36 ,  G06F2217/12 ,  Y02P90/265

摘要： A method for model-based verification of resolution enhancement techniques (RET) and optical proximity correction (OPC) in lithography includes scaling shapes of a drawn mask layout to their corresponding intended wafer dimensions so as to create a scaled image. A first feature of the scaled image is shifted with respect to a second feature thereof in accordance with a predetermined maximum overlay error. An intersection parameter of the first and said second features of the scaled image is calculated so as to determine a yield metric of an ideal layout. A first feature of a simulated wafer image is shifted with respect to a second feature thereof in accordance with the predetermined maximum overlay error. An intersection parameter of the first and said second features of the simulated wafer image is calculated so as to determine a yield metric of a simulated layout, and the yield metric of the simulated wafer image is compared to the yield metric of the scaled image.

摘要翻译： 用于光刻中的分辨率增强技术（RET）和光学邻近校正（OPC）的基于模型的验证的方法包括将绘制的掩模布局的形状缩放到其相应的预期晶片尺寸，以便创建缩放图像。 根据预定的最大重叠误差，缩放图像的第一特征相对于其第二特征偏移。 计算缩放图像的第一和第二特征的交点参数，以便确定理想布局的屈服度量。 模拟晶片图像的第一特征相对于其第二特征根据预定的最大重叠误差而偏移。 计算模拟晶片图像的第一和第二特征的交叉参数，以便确定模拟布局的屈服度量，并将模拟晶片图像的屈服度量与缩放图像的屈服度量进行比较。

公开(公告)号：US20050153212A1

公开(公告)日：2005-07-14

申请号：US10707778

申请日：2004-01-12

申请人： Mark Lavin ,  Lars Liebmann ,  Scott Mansfield ,  Maharaj Mukherjee ,  Zengqin Zhao

发明人： Mark Lavin ,  Lars Liebmann ,  Scott Mansfield ,  Maharaj Mukherjee ,  Zengqin Zhao

IPC分类号： G03C5/00 ,  G03F1/14 ,  G03F9/00 ,  G06F17/50

CPC分类号： G03F1/36

摘要： A method is disclosed for providing associated shapes of an optical lithography mask in relation to predetermined main shapes of the mask. The method includes generating simplified layout patterns from the predetermined main shapes of the mask. Such layout patterns are generated by eliminating detail of the main shapes which leads to unmanufacturable associated shapes while preserving geometrically relevant shape information. The associated shapes are then generated relative to the simplified mask patterns.

摘要翻译： 公开了一种相对于掩模的预定主要形状提供光学光刻掩模的相关形状的方法。 该方法包括从掩模的预定主要形状生成简化的布局图案。 通过消除导致不可制造的相关形状的主要形状的细节来产生这种布局图案，同时保留几何相关的形状信息。 然后相对于简化的掩模图案生成相关联的形状。

公开(公告)号：US07840057B2

公开(公告)日：2010-11-23

申请号：US11874281

申请日：2007-10-18

申请人： Gregg M. Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark A. Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan E. Rosenbluth ,  Shlomo Shlafman

发明人： Gregg M. Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark A. Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan E. Rosenbluth ,  Shlomo Shlafman

IPC分类号： G06K9/00 ,  G06F17/50

CPC分类号： G03F1/36

摘要： Methods, and program storage devices, for performing model-based optical proximity correction by providing a region of interest (ROI) having an interaction distance and locating at least one polygon within the ROI. A cut line of sample points representative of a set of vertices, or plurality of cut lines, are generated within the ROI across at least one lateral edge of the polygon(s). An angular position, and first and second portions of the cut line residing on opposing sides of an intersection between the cut line and the lateral edge of the polygon are determined, followed by generating a new ROI by extending the original ROI beyond its interaction distance based on such angular position, and first and second portions of the cut line. In this manner, a variety of new ROIs may be generated, in a variety of different directions, to ultimately correct for optical proximity.

摘要翻译： 方法和程序存储设备，用于通过提供具有交互距离的感兴趣区域（ROI）和定位ROI内的至少一个多边形来执行基于模型的光学邻近度校正。 在多边形的至少一个侧边缘上，在ROI内产生代表一组顶点或多个切割线的采样点的切割线。 确定角位置，并且切割线的位于切割线和多边形的侧边缘之间的交叉点的相对侧上的切割线的第一和第二部分，然后通过将原始ROI延伸超过其相互作用距离来生成新的ROI 在这种角度位置上，以及切割线的第一和第二部分。 以这种方式，可以在各种不同的方向上产生各种新的ROI，以最终校正光学邻近度。

公开(公告)号：US20080232675A1

公开(公告)日：2008-09-25

申请号：US12132710

申请日：2008-06-04

申请人： Bette L. Bergman Reuter ,  David L. DeMaris ,  Mark A. Lavin ,  William C. Leipold ,  Daniel N. Maynard ,  Maharaj Mukherjee

发明人： Bette L. Bergman Reuter ,  David L. DeMaris ,  Mark A. Lavin ,  William C. Leipold ,  Daniel N. Maynard ,  Maharaj Mukherjee

IPC分类号： G06K9/00

CPC分类号： G06T7/001 ,  G06T2207/30148

摘要： Disclosed is a method of locating systematic defects in integrated circuits. The invention first performs a preliminary extracting and index processing of the circuit design and then performs feature searching. When performing the preliminary extracting and index processing the invention establishes a window grid for the circuit design and merges basis patterns with shapes in the circuit design within each window of the window grid. The invention transforms shapes in a each window into feature vectors by finding intersections between the basis patterns and the shapes in the windows. Then, the invention clusters the feature vectors to produce an index of feature vectors. After performing the extracting and index processing, the invention performs the process of feature searching by first identifying a defect region window of the circuit layout and similarly merging basis patterns with shapes in the defect region window. This merging process can include rotating and mirroring the shapes in the defect region. The invention similarly transforms shapes in the defect region window into defect vectors by finding intersections between basis patterns and the shapes in the defect region. Then, the invention can easily find feature vectors that are similar to the defect vector using, for example, representative feature vectors from the index of feature vectors. Then, the similarities and differences between the defect vectors and the feature vectors can be analyzed.

摘要翻译： 公开了一种定位集成电路系统缺陷的方法。 本发明首先进行电路设计的初步提取和索引处理，然后执行特征搜索。 当执行初步提取和索引处理时，本发明建立了用于电路设计的窗口网格，并且将窗体网格的每个窗口内的电路设计中的形状与基本图案合并。 本发明通过在窗口中找到基本图案和形状之间的交点来将每个窗口中的形状转换为特征向量。 然后，本发明聚集特征向量以产生特征向量的索引。 在执行提取和索引处理之后，本发明通过首先识别电路布局的缺陷区域窗口并且将基本模式与缺陷区域窗口中的形状类似地合并来执行特征搜索的处理。 该合并过程可以包括旋转和镜像缺陷区域中的形状。 本发明类似地通过在缺陷区域中找到基础图案和形状之间的交点来将缺陷区域窗口中的形状转换为缺陷向量。 然后，本发明可以使用例如来自特征向量的索引的代表性特征向量容易地找到与缺陷向量相似的特征向量。 然后，可以分析缺陷向量和特征向量之间的相似性和差异。

公开(公告)号：US07404174B2

公开(公告)日：2008-07-22

申请号：US10710648

申请日：2004-07-27

申请人： David L. DeMaris ,  Mark A. Lavin ,  William C. Leipold ,  Daniel N. Maynard ,  Maharaj Mukherjee

发明人： David L. DeMaris ,  Mark A. Lavin ,  William C. Leipold ,  Daniel N. Maynard ,  Maharaj Mukherjee

IPC分类号： G06F17/50

CPC分类号： G06F17/5081 ,  G06F2217/12 ,  Y02P90/265

摘要： A method of synthesizing layout patterns to test an optical proximity correction algorithm. The method comprises the steps of: embodying Walsh patterns in a set of Walsh pattern matrices; processing groups of matrices from the set of Walsh pattern matrices to form a set of test matrices; mapping the set of test matrices to a test pattern set.

摘要翻译： 一种合成布局图案以测试光学邻近校正算法的方法。 该方法包括以下步骤：在一组沃尔什模式矩阵中体现沃尔什模式; 从所述一组沃尔什图案矩阵中处理​​矩阵组以形成一组测试矩阵; 将测试矩阵的集合映射到测试模式集合。

公开(公告)号：US07131104B2

公开(公告)日：2006-10-31

申请号：US10844794

申请日：2004-05-13

申请人： Gregg M. Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark A. Lavin ,  Dov Ramm ,  Alan E. Rosenbluth ,  Shlomo Shlafman ,  Zheng Chen ,  Maharaj Mukherjee

发明人： Gregg M. Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark A. Lavin ,  Dov Ramm ,  Alan E. Rosenbluth ,  Shlomo Shlafman ,  Zheng Chen ,  Maharaj Mukherjee

IPC分类号： G06F17/50

CPC分类号： G03F1/36 ,  G03F1/70

摘要： A method is described for performing model-based optical proximity corrections on a mask layout used in an optical lithography process having a plurality of mask shapes. Model-based optical proximity correction is performed by computing the image intensity on selected evaluation points on the mask layout. The image intensity to be computed includes optical flare and stray light effects due to the interactions between the shapes on the mask layout. The computation of the image intensity involves sub-dividing the mask layout into a plurality of regions, each region at an increasing distance from the evaluation point. The contributions of the optical flare and stray light effects due to mask shapes in each of the regions are then determined. Finally, all the contributions thus obtained are combined to obtain the final computation of the image intensity at the selected point.

摘要翻译： 描述了一种用于在具有多个掩模形状的光学光刻工艺中使用的掩模布局上执行基于模型的光学邻近校正的方法。 基于模型的光学邻近校正通过在掩模布局上的所选评估点上计算图像强度来执行。 要计算的图像强度由于掩模布局上的形状之间的相互作用而包括光学耀斑和杂散光效应。 图像强度的计算涉及将掩模布局分成多个区域，每个区域距离评估点增加的距离。 然后确定由于每个区域中的掩模形状引起的光学耀斑和杂散光效应的贡献。 最后，将所得到的所有贡献结合起来，以获得所选点处图像强度的最终计算。

公开(公告)号：US07010776B2

公开(公告)日：2006-03-07

申请号：US10694466

申请日：2003-10-27

申请人： Gregg M. Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark A. Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan E. Rosenbluth ,  Shlomo Shlafman

发明人： Gregg M. Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark A. Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan E. Rosenbluth ,  Shlomo Shlafman

IPC分类号： G06F17/50

CPC分类号： G03F1/36 ,  G03F1/70

摘要： A method for calculating long-range image contributions from mask polygons. An algorithm is introduced having application to Optical Proximity Correction in optical lithography. A finite integral for each sector of a polygon replaces an infinite integral. Integrating over two triangles, rather than integrating on the full sector, achieves a finite integral. An analytical approach is presented for a power law kernel to reduce the numerical integration of a sector to an analytical expression evaluation. The mask polygon is divided into regions to calculate interaction effects, such as intermediate-range and long-range effects, by truncating the mask instead of truncating the kernel function.

摘要翻译： 一种用于从掩模多边形计算长距离图像贡献的方法。 引入了一种应用于光学光刻中的光学邻近校正的算法。 多边形的每个扇区的有限积分代替无限积分。 整合在两个三角形上，而不是整体上整合，实现了一个有限积分。 针对幂律内核提出了一种分析方法，以减少一个部门与分析表达式评估的数值整合。 掩模多边形被划分为区域，以通过截断掩码而不是截断内核函数来计算交互效应，例如中间范围和远程效果。

公开(公告)号：US07761839B2

公开(公告)日：2010-07-20

申请号：US11874274

申请日：2007-10-18

申请人： Gregg M. Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark A. Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan E. Rosenbluth ,  Shlomo Shlafman

发明人： Gregg M. Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark A. Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan E. Rosenbluth ,  Shlomo Shlafman

IPC分类号： G06F17/50

CPC分类号： G03F1/36

摘要： Methods, and a program storage device for executing such methods, for performing model-based optical proximity correction by providing a mask matrix having a region of interest (ROI) and locating a plurality of points of interest within the mask matrix. A first polygon having a number of vertices representative of the located points of interest is computed, followed by determining a spatial relation between its vertices and the ROI. The vertices of the first polygon are then pinned to boundaries of and within the ROI such that a second polygon is formed on the ROI. The process is repeated for all vertices of the first polygon such that the second polygon is collapsed onto the ROI. This collapsed second polygon is then used to correct for optical proximity.

摘要翻译： 方法和用于执行这种方法的程序存储装置，用于通过提供具有感兴趣区域（ROI）的掩模矩阵并且在掩模矩阵内定位多个感兴趣点来执行基于模型的光学邻近校正。 计算具有代表所述定位的兴趣点的顶点数的第一多边形，然后确定其顶点和ROI之间的空间关系。 然后将第一多边形的顶点固定在ROI的边界和内部，使得在ROI上形成第二多边形。 对第一多边形的所有顶点重复该过程，使得第二多边形折叠到ROI上。 然后使用这个折叠的第二个多边形来校正光学接近度。

公开(公告)号：US07552417B2

公开(公告)日：2009-06-23

申请号：US12132710

申请日：2008-06-04

申请人： Bette L. Bergman Reuter ,  David L. DeMaris ,  Mark A. Lavin ,  William C. Leipold ,  Daniel N. Maynard ,  Maharaj Mukherjee

发明人： Bette L. Bergman Reuter ,  David L. DeMaris ,  Mark A. Lavin ,  William C. Leipold ,  Daniel N. Maynard ,  Maharaj Mukherjee

IPC分类号： G06F17/50

CPC分类号： G06T7/001 ,  G06T2207/30148

摘要： Disclosed is a method of locating systematic defects in integrated circuits. The invention first performs a preliminary extracting and index processing of the circuit design and then performs feature searching. When performing the preliminary extracting and index processing the invention establishes a window grid for the circuit design and merges basis patterns with shapes in the circuit design within each window of the window grid. The invention transforms shapes in a each window into feature vectors by finding intersections between the basis patterns and the shapes in the windows. Then, the invention clusters the feature vectors to produce an index of feature vectors. After performing the extracting and index processing, the invention performs the process of feature searching by first identifying a defect region window of the circuit layout and similarly merging basis patterns with shapes in the defect region window. This merging process can include rotating and mirroring the shapes in the defect region. The invention similarly transforms shapes in the defect region window into defect vectors by finding intersections between basis patterns and the shapes in the defect region. Then, the invention can easily find feature vectors that are similar to the defect vector using, for example, representative feature vectors from the index of feature vectors. Then, the similarities and differences between the defect vectors and the feature vectors can be analyzed.

摘要翻译： 公开了一种定位集成电路系统缺陷的方法。 本发明首先进行电路设计的初步提取和索引处理，然后执行特征搜索。 当执行初步提取和索引处理时，本发明建立了用于电路设计的窗口网格，并且将窗体网格的每个窗口内的电路设计中的形状与基本图案合并。 本发明通过在窗口中找到基本图案和形状之间的交点来将每个窗口中的形状转换为特征向量。 然后，本发明聚集特征向量以产生特征向量的索引。 在执行提取和索引处理之后，本发明通过首先识别电路布局的缺陷区域窗口并且将基本模式与缺陷区域窗口中的形状类似地合并来执行特征搜索的处理。 该合并过程可以包括旋转和镜像缺陷区域中的形状。 本发明类似地通过在缺陷区域中找到基础图案和形状之间的交点来将缺陷区域窗口中的形状转换为缺陷向量。 然后，本发明可以使用例如来自特征向量的索引的代表性特征向量容易地找到与缺陷向量相似的特征向量。 然后，可以分析缺陷向量和特征向量之间的相似性和差异。