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    Non-Isoelectronic Surfactant Assisted Growth In Inverted Metamorphic Multijunction Solar Cells
    1.
    发明申请
    Non-Isoelectronic Surfactant Assisted Growth In Inverted Metamorphic Multijunction Solar Cells 审中-公开
    非等电子表面活性剂辅助生长反相变质多功能太阳能电池

    公开(公告)号：US20090229658A1

    公开(公告)日：2009-09-17

    申请号：US12047842

    申请日：2008-03-13

    申请人： Mark A. Stan ,  Arthur Comfeld ,  Fred Newman

    发明人： Mark A. Stan ,  Arthur Comfeld ,  Fred Newman

    IPC分类号： H01L31/00 ,  H01L31/18

    CPC分类号： H01L31/0725 ,  H01L31/06875 ,  H01L31/0735 ,  H01L31/1844 ,  Y02E10/544

    摘要： A method of forming a multifunction solar cell including an upper subcell, a middle subcell, and a lower subcell, the method including: providing a substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a graded interlayer over the second subcell using a non-isoelectronic surfactant such as selenium or tellurium, the graded interlayer having a third band gap greater than the second band gap; and forming a third solar subcell over the graded interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell.

    摘要翻译： 一种形成包括上部子电池，中间子电池和下部子电池的多功能太阳能电池的方法，所述方法包括：提供用于半导体材料的外延生长的衬底; 在具有第一带隙的基板上形成第一太阳能子电池; 在所述第一太阳能子电池上形成具有小于所述第一带隙的第二带隙的第二太阳能子电池; 使用诸如硒或碲的非等电子表面活性剂在所述第二子电池上形成分级中间层，所述渐变中间层具有大于所述第二带隙的第三带隙; 以及在所述渐变中间层上形成具有小于所述第二带隙的第四带隙的第三太阳能子电池，使得所述第三子电池相对于所述第二子电池晶格失配。

    SOLAR CELL STRUCTURE WITH LOCALIZED DOPING IN CAP LAYER
    2.
    发明申请
    SOLAR CELL STRUCTURE WITH LOCALIZED DOPING IN CAP LAYER 有权
    太阳能电池结构在CAP层中具有局部放电

    公开(公告)号：US20080092943A1

    公开(公告)日：2008-04-24

    申请号：US11550881

    申请日：2006-10-19

    申请人： Arthur Comfeld ,  Mark A. Stan ,  Paul R. Sharps

    发明人： Arthur Comfeld ,  Mark A. Stan ,  Paul R. Sharps

    IPC分类号： H01L31/00

    CPC分类号： H01L27/142 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/0687 ,  Y02E10/544

    摘要： A solar cell includes a semiconductor substrate and a sequence of semiconductor layers disposed over the substrate. The sequence of semiconductor layers includes a semiconductor window layer. The solar cell also includes a semiconductor silicon-containing cap layer over the window layer. The cap layer is spatially separated from the window layer by a semiconductor barrier layer that either includes no silicon or has a silicon concentration that is significantly lower than the silicon concentration of the cap layer.

    摘要翻译： 太阳能电池包括半导体衬底和设置在衬底上的半导体层序列。 半导体层的序列包括半导体窗口层。 太阳能电池还包括窗口层上的半导体含硅覆盖层。 盖层通过半导体阻挡层在空间上与窗口层分开，半导体阻挡层不包括硅或具有明显低于覆盖层的硅浓度的硅浓度。

    Solar cell structure with localized doping in cap layer
    3.
    发明授权
    Solar cell structure with localized doping in cap layer 有权
    太阳能电池结构在盖层中具有局部掺杂

    公开(公告)号：US07842881B2

    公开(公告)日：2010-11-30

    申请号：US11550881

    申请日：2006-10-19

    申请人： Arthur Comfeld ,  Mark N. Stan ,  Paul R. Sharps

    发明人： Arthur Comfeld ,  Mark N. Stan ,  Paul R. Sharps

    IPC分类号： H01L31/00

    CPC分类号： H01L27/142 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/0687 ,  Y02E10/544

    摘要： A solar cell includes a semiconductor substrate and a sequence of semiconductor layers disposed over the substrate. The sequence of semiconductor layers includes a semiconductor window layer. The solar cell also includes a semiconductor silicon-containing cap layer over the window layer. The cap layer is spatially separated from the window layer by a semiconductor barrier layer that either includes no silicon or has a silicon concentration that is significantly lower than the silicon concentration of the cap layer.

    摘要翻译： 太阳能电池包括半导体衬底和设置在衬底上的半导体层序列。 半导体层的序列包括半导体窗口层。 太阳能电池还包括窗口层上的半导体含硅覆盖层。 盖层通过半导体阻挡层在空间上与窗口层分开，半导体阻挡层不包括硅或具有明显低于覆盖层的硅浓度的硅浓度。