利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

32 条记录 (耗时 0.021 秒)

    Solar cell structure with localized doping in cap layer
    4.
    发明授权
    Solar cell structure with localized doping in cap layer 有权
    太阳能电池结构在盖层中具有局部掺杂

    公开(公告)号：US07842881B2

    公开(公告)日：2010-11-30

    申请号：US11550881

    申请日：2006-10-19

    申请人： Arthur Comfeld ,  Mark N. Stan ,  Paul R. Sharps

    发明人： Arthur Comfeld ,  Mark N. Stan ,  Paul R. Sharps

    IPC分类号： H01L31/00

    CPC分类号： H01L27/142 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/0687 ,  Y02E10/544

    摘要： A solar cell includes a semiconductor substrate and a sequence of semiconductor layers disposed over the substrate. The sequence of semiconductor layers includes a semiconductor window layer. The solar cell also includes a semiconductor silicon-containing cap layer over the window layer. The cap layer is spatially separated from the window layer by a semiconductor barrier layer that either includes no silicon or has a silicon concentration that is significantly lower than the silicon concentration of the cap layer.

    摘要翻译： 太阳能电池包括半导体衬底和设置在衬底上的半导体层序列。 半导体层的序列包括半导体窗口层。 太阳能电池还包括窗口层上的半导体含硅覆盖层。 盖层通过半导体阻挡层在空间上与窗口层分开，半导体阻挡层不包括硅或具有明显低于覆盖层的硅浓度的硅浓度。

    SOLAR CELL STRUCTURE WITH LOCALIZED DOPING IN CAP LAYER
    5.
    发明申请
    SOLAR CELL STRUCTURE WITH LOCALIZED DOPING IN CAP LAYER 有权
    太阳能电池结构在CAP层中具有局部放电

    公开(公告)号：US20080092943A1

    公开(公告)日：2008-04-24

    申请号：US11550881

    申请日：2006-10-19

    申请人： Arthur Comfeld ,  Mark A. Stan ,  Paul R. Sharps

    发明人： Arthur Comfeld ,  Mark A. Stan ,  Paul R. Sharps

    IPC分类号： H01L31/00

    CPC分类号： H01L27/142 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/0687 ,  Y02E10/544

    摘要： A solar cell includes a semiconductor substrate and a sequence of semiconductor layers disposed over the substrate. The sequence of semiconductor layers includes a semiconductor window layer. The solar cell also includes a semiconductor silicon-containing cap layer over the window layer. The cap layer is spatially separated from the window layer by a semiconductor barrier layer that either includes no silicon or has a silicon concentration that is significantly lower than the silicon concentration of the cap layer.

    摘要翻译： 太阳能电池包括半导体衬底和设置在衬底上的半导体层序列。 半导体层的序列包括半导体窗口层。 太阳能电池还包括窗口层上的半导体含硅覆盖层。 盖层通过半导体阻挡层在空间上与窗口层分开，半导体阻挡层不包括硅或具有明显低于覆盖层的硅浓度的硅浓度。

    Inverted metamorphic solar cell with via for backside contacts
    10.
    发明申请
    Inverted metamorphic solar cell with via for backside contacts 审中-公开
    反型变质太阳能电池，通孔用于背面接触

    公开(公告)号：US20080185038A1

    公开(公告)日：2008-08-07

    申请号：US11701741

    申请日：2007-02-02

    申请人： Paul R. Sharps

    发明人： Paul R. Sharps

    IPC分类号： H01L31/00

    CPC分类号： H01L31/022425 ,  H01L31/03529 ,  H01L31/06875 ,  Y02E10/544 ,  Y02P70/521

    摘要： A method of forming a multijunction solar cell comprising an upper subcell, a middle subcell, and a lower subcell by providing a first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on said substrate having a first band gap; forming a second solar subcell over said first subcell having a second band gap smaller than said first band gap; forming a grading interlayer over said second subcell having a third band gap larger than said second band gap; forming a third solar subcell having a fourth band gap smaller than said second band gap such that said third subcell is lattice mismatched with respect to said second subcell; and etching a via from the top of the third subcell to the substrate to enable both anode and cathode contacts to be placed on the backside of the solar cell.

    摘要翻译： 一种通过提供用于半导体材料的外延生长的第一衬底来形成包括上部子电池，中间子电池和下部子电池的多结太阳能电池的方法; 在所述基板上形成具有第一带隙的第一太阳能子电池; 在所述第一子电池上形成具有小于所述第一带隙的第二带隙的第二太阳能子电池; 在所述第二子电池上形成具有大于所述第二带隙的第三带隙的分级中间层; 形成具有小于所述第二带隙的第四带隙的第三太阳能子电池，使得所述第三子电池相对于所述第二子电池晶格失配; 并且将通孔从第三子电池的顶部蚀刻到衬底，以使得阳极和阴极接触都能够放置在太阳能电池的背面。