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公开(公告)号：US07027125B2
公开(公告)日：2006-04-11
申请号：US10808740
申请日：2004-03-25
CPC分类号： G03F7/70808 , G03F7/70341
摘要： A photolithographic apparatus, system and method employing an improved refractive medium. The photolithographic apparatus may be used in an immersion lithography system for projecting light onto a workpiece such as a semiconductor wafer. In one embodiment, the photolithographic apparatus includes a container containing a transparent fluid. The fluid container is positioned between a lens element and the wafer. The container is further characterized as having a substantially flexible and transparent bottom membrane contacting an upper surface of the wafer and overlapping at least one side edge of the wafer such that a fluid filled skirt is formed extending beyond the edges of the wafer.
摘要翻译： 一种使用改进的折射介质的光刻设备，系统和方法。 光刻设备可以用于浸入式光刻系统中，用于将光投射到诸如半导体晶片的工件上。 在一个实施例中，光刻设备包括容纳透明流体的容器。 流体容器位于透镜元件和晶片之间。 该容器的特征还在于具有与晶片的上表面接触并且与晶片的至少一个侧边缘重叠的基本柔性且透明的底膜，从而形成延伸超过晶片边缘的充满液体的裙部。
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公开(公告)号：US06342323B1
公开(公告)日：2002-01-29
申请号：US09523796
申请日：2000-03-13
申请人： William Hsioh-Lien Ma , David Vaclay Horak , Toshiharu Furukawa , Steven J. Holmes , Mark Charles Hakey
发明人： William Hsioh-Lien Ma , David Vaclay Horak , Toshiharu Furukawa , Steven J. Holmes , Mark Charles Hakey
IPC分类号： G03F900
CPC分类号： G03F9/7084 , G03F9/7046
摘要： An improved alignment methodology for lithography. In the method, a third level is aligned to two previous levels, where the alignment mark location for the third level is calculated based upon the two previous levels in both the x- and y-directions. A preferred embodiment of the invention relates to a lithography alignment method for aligning a third level of a semiconductor device relative to first and second previous levels of the device. The method comprises the steps of forming first and second patterns at the first and second levels respectively, and determining offsets of the first and second patterns in two orthoginal directions. An optimum location for a third pattern in the third level is then determined based on an average of the offsets of the first and second patterns.
摘要翻译： 改进光刻对准方法。 在该方法中，第三级与两个先前级别对准，其中基于x和y方向上的两个先前级别来计算第三级的对准标记位置。 本发明的优选实施例涉及一种用于使半导体器件的第三级相对于器件的第一和第二级别对准的光刻对准方法。 该方法包括以下步骤：分别在第一和第二电平处形成第一和第二图案，以及确定两个原始方向上的第一和第二图案的偏移。 然后基于第一和第二图案的偏移的平均值来确定第三级中的第三图案的最佳位置。
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公开(公告)号：US06268908B1
公开(公告)日：2001-07-31
申请号：US09385907
申请日：1999-08-30
IPC分类号： G03B2772
CPC分类号： G03F7/70091 , G03F7/70116
摘要： The distribution of ultraviolet light irradiated from an illumination source to optical elements of a projection exposure device is varied by an illumination aperture. The illumination aperture is formed with a plurality of openings which may be opened or closed independently to the passage of irradiating light. The size and shape of the opening formed by the plurality of openings of the illumination aperture is determined according to the particular image to be projected.
摘要翻译： 从照明源照射到投影曝光装置的光学元件的紫外线的分布由照明孔径变化。 照明孔形成有多个开口，其可以独立于照射光的通过而打开或关闭。 根据要投影的特定图像确定由照明孔的多个开口形成的开口的尺寸和形状。
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