公开(公告)号：US20110233730A1

公开(公告)日：2011-09-29

申请号：US12028587

申请日：2008-02-08

申请人： Mark Cooper Hanna ,  Robert Reedy

发明人： Mark Cooper Hanna ,  Robert Reedy

IPC分类号： H01L29/20

CPC分类号： C30B29/40 ,  C30B25/02 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phosphine gas, Zn vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and group VIB vapors produce a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

摘要翻译： 提供GaAlInP化合物半导体和制造GaAlInP化合物半导体的方法。 该装置和方法包括在金属有机气相沉积反应器中的GaAs晶体衬底。 Al，Ga，In蒸气通过热分解有机金属化合物制备。 P蒸气通过热分解磷化氢气体制备，Zn蒸气通过热分解有机金属组IIA或IIB化合物制备。 通过热分解组VIB的气态化合物制备组VIB蒸气。 Al，Ga，In，P，II族和VIB族蒸气在衬底上生长掺杂有IIA或IIB族和VIB族元素的GaAlInP晶体，其中IIA或IIB族和VIB族V族蒸气产生共掺杂的GaAlInP化合物半导体， 用作具有低II族原子扩散的p型掺杂剂的IIA或IIB族元素。

公开(公告)号：US07329554B2

公开(公告)日：2008-02-12

申请号：US10552102

申请日：2001-11-08

申请人： Mark Cooper Hanna ,  Robert Reedy

发明人： Mark Cooper Hanna ,  Robert Reedy

IPC分类号： H01L21/00

CPC分类号： C30B29/40 ,  C30B25/02 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

摘要翻译： 提供GaAlInP化合物半导体和制造GaAlInP化合物半导体的方法。 该装置和方法包括在金属有机气相沉积反应器中的GaAs晶体衬底。 Al，Ga，In蒸气通过热分解有机金属化合物制备。 通过热分解磷酸气体制备P蒸气，第II组蒸气通过热分解有机金属组IIA或IIB化合物制备。 通过热分解组VIB的气态化合物制备组VIB蒸气。 Al，Ga，In，P，II族和VIB族蒸气在衬底上生长掺杂有IIA或IIB族和VIB族元素的GaAlInP晶体，其中IIA或IIB族和VIB族蒸气产生共掺GaAlInP化合物半导体 其中IIA或IIB族元素用作具有低II族原子扩散的p型掺杂剂。