摘要:
An electrostatic RF absorbant circuit carrier assembly production method including the steps of forming a polymeric support structure having a base and surrounding walls which form an internal cavity from plastic, disposing a plurality of conductor paths within the cavity, forming a polymeric cover having wall members integrally fashioned into a surface thereof, for making contact with conductor paths within the cavity, depositing a layer of surface material on the cover and the cover wall members, said surface material comprising:a thermosetting binder,a non-conductive RF absorbing filler comprising 25 to 87 percent by weight loading of the binder, such that the surface material absorbs RF energy within a range of 1-60 GHz, anda conductive filler comprising 1 to 4 percent by weight loading of the binder and the RF absorbing filler, such that the surface material has a surface resistivity of 10.sup.5 -10.sup.12 ohms/square, and fixing the polymeric cover to the polymeric support structure to cover the cavity and provide said contact between the wall members and the conductive paths, thereby forming a circuit carrier assembly.
摘要:
An electrostatic RF absorbant circuit carrier assembly (200) is described as having a plastic support structure (100) which consists of an integrally fashioned base (180) and surrounding sidewalls (170) which together form an internal cavity (185). A plurality of conductor paths (125,165) are disposed within the cavity (185). The assembly (200) is completed by a polymeric cover (110) having a surface integrally fashioned to comprise wall members (145) for making contact with conductive paths (165) within the cavity (185). In order to facilitate RF isolation and electrostatic dissipation, the cover (110) is layered with a surface material comprising:a thermosetting matrix system;a non-conductive RF absorbing filler comprising 25 to 87 percent by weight loading of the thermosetting matrix system; anda conductive filler comprising 1 to 4 percent by weight loading of the thermosetting matrix system and the RF absorbing filler.
摘要:
Microwave parallel coupled line filters with direct taps having improved rejection of undesired signals near the pass-band are disclosed. Improved rejection is achieved by controlling the transmission zeros created by the input and output direct taps. Performance is comparable to parallel coupled line filters having substantially more coupling sections. The method involves shifting the transmission zeros by changing the position of the direct taps along the resonator or changing the impedance of the open-circuited stub associated with each tap. Impedance transformers can be used to match back to the source and load impedances.
摘要:
Inductorless bias networks include a bias circuit having a bias return path which is coupled to and biases a variable impedance device in a relatively nonconductive state. Another bias circuit including a FET renders the variable impedance device relatively conductive in response to control signals so that one port is coupled to another port, for instance.
摘要:
An electromagnetic baffle arrangement includes a lid (22) having a trough or air gap (30) in the side walls of each cavity (23) of lid (22). Conductive strips (28) are applied to a layer of printed circuit board (26) and each of the legs (31) of lid (22). Optionally, to eliminate circulation of electromagnetic signals within air gap (30) a grounded bolt (32) may be inserted aperiodically.
摘要:
A ring shaped dielectric resonator tuned by inserting a bolt from below the resonator into an opening of the resonator. The bolt causes the dielectric constant of the opening to change. The change in the dielectric constant changes the electric field which in turn changes the magnetic field of the resonator.