摘要:
A method and apparatus for managing write-to-read turnarounds in an early read after write memory system are presented. Memory controller logic identifies a write operation's bank set, allows a different bank set read operation to issue prior to the write operation's completion, and allows a same bank set read operation to issue once the write operation completes. The memory controller includes operation counter logic, operation selection logic, operation acceptance logic, command formatting logic, and memory interface logic. The operation counter logic receives new-operation-related signals from the operation acceptance logic and, in turn, provides signals to the operation selection logic and the operation acceptance logic as to when to issue a read operation that corresponds to either an even DRAM bank or an odd DRAM bank.
摘要:
Managing write-to-read turnarounds in an early read after write memory system is presented. Memory controller logic identifies a write operation's bank set, allows a different bank set read operation to issue prior to the write operation's completion, and allows a same bank set read operation to issue once the write operation completes. The memory controller includes operation counter logic, operation selection logic, operation acceptance logic, command formatting logic, and memory interface logic. The operation counter logic receives new-operation-related signals from the operation acceptance logic and, in turn, provides signals to the operation selection logic and the operation acceptance logic as to when to issue a read operation that corresponds to either an even DRAM bank or an odd DRAM bank.
摘要:
Managing write-to-read turnarounds in an early read after write memory system is presented. Memory controller logic identifies a write operation's bank set, allows a different bank set read operation to issue prior to the write operation's completion, and allows a same bank set read operation to issue once the write operation completes. The memory controller includes operation counter logic, operation selection logic, operation acceptance logic, command formatting logic, and memory interface logic. The operation counter logic receives new-operation-related signals from the operation acceptance logic and, in turn, provides signals to the operation selection logic and the operation acceptance logic as to when to issue a read operation that corresponds to either an even DRAM bank or an odd DRAM bank.
摘要:
Managing write-to-read turnarounds in an early read after write memory system is presented. Memory controller logic identifies a write operation's bank set, allows a different bank set read operation to issue prior to the write operation's completion, and allows a same bank set read operation to issue once the write operation completes. The memory controller includes operation counter logic, operation selection logic, operation acceptance logic, command formatting logic, and memory interface logic. The operation counter logic receives new-operation-related signals from the operation acceptance logic and, in turn, provides signals to the operation selection logic and the operation acceptance logic as to when to issue a read operation that corresponds to either an even DRAM bank or an odd DRAM bank.
摘要:
In a first aspect, a first method of interfacing a processor and memory is provided. The first method includes the steps of (1) providing a computer system including (a) a first memory; (b) a processor adapted to issue a functional command to the first memory; (c) a translation chip; (d) a cache memory coupled to the translation chip; (e) a first link adapted to couple the processor to the translation chip; and (f) a second link adapted to couple the translation chip to the first memory; and (2) calibrating the first link to transmit data between the processor and cache memory. Numerous other aspects are provided.
摘要:
A method, an apparatus, and a computer program are provided to account for data stored in Dynamic Random Access Memory (DRAM) write buffers. There is difficulty in tracking the data stored in DRAM write buffers. To alleviate the difficulty, a cache line list is employed. The cache line list is maintained in a memory controller, which is updated with data movement. This list allows for ease of maintenance of data without loss of consistency.
摘要:
A method, an apparatus, and a computer program are provided to reuse functional data buffers. With Extreme Data Rate (XDR™) Dynamic Random Access Memory (DRAM), test patterns are employed to dynamically calibrate data with the clock. To perform this task, data buffers are employed to store data and commands for the calibration patterns. However, there are different procedures and requirements for transmission and reception calibrations. Hence, to reduce the amount of hardware needed to perform transmission and reception calibrations, the data buffers employ additional front end circuitry to reuse the buffers for both tasks.
摘要:
A mechanism is provided to reuse functional data buffers. With Extreme Data Rate (XDR™) Dynamic Random Access Memory (DRAM), test patterns are employed to dynamically calibrate data with the clock. To perform this task, data buffers are employed to store data and commands for the calibration patterns. However, there are different procedures and requirements for transmission and reception calibrations. Hence, to reduce the amount of hardware needed to perform transmission and reception calibrations, the data buffers employ additional front end circuitry to reuse the buffers for both tasks.
摘要:
A method, apparatus and computer program product are provided for implementing packet command instructions for network processing. A set of packet commands is provided. Each packet command defines a corresponding packet operation. A command from the set of packet commands is issued to perform the defined corresponding packet operation. A packet buffer structure hardware is provided for performing one or more predefined packet manipulation functions responsive to the issued command.
摘要:
A method, an apparatus, and a computer program product are provided for the handling of write mask operations in an XDR™ DRAM memory system. This invention eliminates the need for a two-port array because the mask generation is done as the data is received. Less logic is needed for the mask calculation because only 144 of the 256 possible byte values are decoded. The mask value is generated and stored in a mask array. Independently, the write data is stored in a write buffer. The mask value is utilized to generate a write mask command. Once the write mask command is issued, the write data and the mask value are transmitted to a multiplexer. The multiplexer masks the write data using the mask value, so that the masked data can be stored in the XDR DRAMS.