摘要:
Managing write-to-read turnarounds in an early read after write memory system is presented. Memory controller logic identifies a write operation's bank set, allows a different bank set read operation to issue prior to the write operation's completion, and allows a same bank set read operation to issue once the write operation completes. The memory controller includes operation counter logic, operation selection logic, operation acceptance logic, command formatting logic, and memory interface logic. The operation counter logic receives new-operation-related signals from the operation acceptance logic and, in turn, provides signals to the operation selection logic and the operation acceptance logic as to when to issue a read operation that corresponds to either an even DRAM bank or an odd DRAM bank.
摘要:
A method and circuit for implementing lane shuffle for fault-tolerant communication links, and a design structure on which the subject circuit resides are provided. Shuffle hardware logic steers a set of virtual data lanes onto a set of physical optical lanes, steering around all lanes that are detected as bad during link initialization training. A mask status register is loaded with a mask of lane fail information during link training, which flags the bad lanes, if any. The shuffle hardware logic uses a shift template, where each position in the starting template is a value representing the corresponding lane position. The shift template is cascaded through a set of shifters controlled by the fail mask.
摘要:
Managing write-to-read turnarounds in an early read after write memory system is presented. Memory controller logic identifies a write operation's bank set, allows a different bank set read operation to issue prior to the write operation's completion, and allows a same bank set read operation to issue once the write operation completes. The memory controller includes operation counter logic, operation selection logic, operation acceptance logic, command formatting logic, and memory interface logic. The operation counter logic receives new-operation-related signals from the operation acceptance logic and, in turn, provides signals to the operation selection logic and the operation acceptance logic as to when to issue a read operation that corresponds to either an even DRAM bank or an odd DRAM bank.
摘要:
A memory controller design tool retrieves parameter ranges supported by a memory controller, and identifies troublesome parameter value combinations. The memory controller design tool suggests to 1) add logic to the memory controller to resolve the conflict, 2) incorporate a constraint that reduces/eliminates command collisions, data conflicts, and/or the need to check particular timing parameters, or 3) a combination of both. The memory controller design tool may work in conjunction with a memory controller designer to define and use the constraints.
摘要:
A structure of sequencers, a method, and a computer program are provided for performing initial and periodic calibrations in an XDR™ memory system. A memory controller that performs these calibrations is divided into identical, independent halves, with each half containing a Current/Impedance Calibration (i/z Cal) sequencer and six Bank sequencers. The i/z Cal sequencer contains three pathways that perform the XIO current and termination calibrations, and the XDR™ DRAM current and termination impedance calibrations. Each Bank sequencer contains normal read and write operation pathways that are reused to accomplish receive setup, receive hold, transmit setup, transmit hold, XIO receive, and XIO transmit timing calibrations. Initial and periodic calibrations are necessary to ensure the precise transfer of data between the XIOs and the XDR™ DRAMs.
摘要翻译:提供了定序器的结构,方法和计算机程序,用于在XDR TM存储器系统中执行初始和周期性校准。 执行这些校准的存储器控制器被分成相同的独立半部,每个半部分包含电流/阻抗校准(i / z Cal)定序器和六个音序器。 i / z Cal序列器包含执行XIO电流和终止校准的三个路径,以及XDR(TM)DRAM电流和终端阻抗校准。 每个Bank序列器都包含正常的读写操作路径,用于实现接收建立,接收保持,发送设置,发送保持,XIO接收和XIO发送定时校准。 必须进行初始和周期性校准,以确保XIO和XDR(TM)DRAM之间数据的精确传输。
摘要:
A method, a computer program, and an apparatus are provided for flexible SC to SR mapping to enable sub-page activation in an XDR™ memory system. An XDR™ memory system may allow system page size to reduced by a factor of two (half-page activation) or four (quarter-page activation). In an XDR™ memory system there are five different SCs and two different SRs. This scheme allows any one of the five SCs (or none) to be mapped to any one of the two SRs. Overall, this invention provides a flexible mapping scheme that can be utilized for any possible XDR memory system.
摘要:
A structure of sequencers, a method, and a computer program are provided for performing initial and periodic calibrations in an XDR™ memory system. A memory controller that performs these calibrations is divided into identical, independent halves, with each half containing a Current/Impedance Calibration (i/z Cal) sequencer and six Bank sequencers. The i/z Cal sequencer contains three pathways that perform the XIO current and termination calibrations, and the XDR™ DRAM current and termination impedance calibrations. Each Bank sequencer contains normal read and write operation pathways that are reused to accomplish receive setup, receive hold, transmit setup, transmit hold, XIO receive, and XIO transmit timing calibrations. Initial and periodic calibrations are necessary to ensure the precise transfer of data between the XIOs and the XDR™ DRAMs.
摘要翻译:提供了定序器的结构,方法和计算机程序,用于在XDR TM存储器系统中执行初始和周期性校准。 执行这些校准的存储器控制器被分成相同的独立半部,每个半部分包含电流/阻抗校准(i / z Cal)定序器和六个音序器。 i / z Cal序列器包含执行XIO电流和终止校准的三个路径,以及XDR(TM)DRAM电流和终端阻抗校准。 每个Bank序列器都包含正常的读写操作路径,用于实现接收建立,接收保持,发送设置,发送保持,XIO接收和XIO发送定时校准。 必须进行初始和周期性校准,以确保XIO和XDR(TM)DRAM之间数据的精确传输。
摘要:
In a first aspect, a first method of interfacing a processor and memory is provided. The first method includes the steps of (1) providing a processor adapted to issue a command complying with a first protocol; (2) providing a memory coupled to the processor and accessible by a command complying with a second protocol; (3) employing a plurality of scrub commands complying with the second protocol to check respective portions of the memory for errors, wherein each scrub command complying with the second protocol is a converted version of a scrub command complying with the first protocol issued by the processor and the respective portions are non-sequential; and (4) refreshing bits stored in the entire memory within a predetermined time period. Numerous other aspects are provided.
摘要:
A memory system employs calibrations to ensure the precise transmission of data. During calibrations, memory refreshes can occur; however, these refreshes can interfere with calibration streams. Therefore, to alleviate collisions and interferences, refreshes are deferred to periods where no calibrations are taking place. The number of deferred refreshes is also tracked such that the overall loss of refreshes is prevented.
摘要:
A method, an apparatus, and a computer program are provided to control refreshes in Extreme Data Rate (XDR™) memory systems. XDR™ memory systems employ calibrations to ensure the precise transmission of data. During calibrations, memory refreshes can occur; however, these refreshes can interfere with calibration streams. Therefore, to alleviate collisions and interferences, refreshes are deferred to periods where no calibrations are taking place. The number of deferred refreshes is also tracked such that the overall loss of refreshes is prevented.