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8 条记录 (耗时 0.019 秒)

    Schottky diode and method of manufacture
    5.
    发明授权
    Schottky diode and method of manufacture 有权
    肖特基二极管及其制造方法

    公开(公告)号：US07279390B2

    公开(公告)日：2007-10-09

    申请号：US11084471

    申请日：2005-03-21

    申请人： Mark Duskin ,  Blanca Estela Kruse

    发明人： Mark Duskin ,  Blanca Estela Kruse

    IPC分类号： H01L21/8222

    CPC分类号： H01L29/66143 ,  H01L29/0692 ,  H01L29/872

    摘要： A Schottky diode capable of sustaining a breakdown voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer disposed on a semiconductor substrate has a thickness of at least about 15 micrometers and an impurity concentration ranging from about 1×1014 atoms per cubic centimeter to about 1×1015 atoms per cubic centimeter. A guard ring extends from about 3 micrometers to about 15 micrometers into the epitaxial layer. A dielectric material is formed over the epitaxial layer and a portion of the dielectric material is removed to expose a portion of the guard ring and a portion of the epitaxial layer within the guard ring. An electrically conductive material is formed over the exposed portion of the epitaxial layer and an electrically conductive material is formed in contact with a bottom surface of the semiconductor substrate.

    摘要翻译： 能够维持大于约250伏的击穿电压的肖特基二极管及其制造方法。 设置在半导体衬底上的外延层的厚度为至少约15微米，杂质浓度范围为每立方厘米约1×10 14原子/约1×10 15原子/ 立方厘米。 保护环从约3微米到约15微米延伸到外延层中。 介电材料形成在外延层上，并且介电材料的一部分被去除以暴露保护环的一部分和保护环内的外延层的一部分。 在外延层的暴露部分之上形成导电材料，并且形成与半导体衬底的底表面接触的导电材料。

    Schottky diode and method of manufacture
    6.
    发明申请
    Schottky diode and method of manufacture 有权
    肖特基二极管及其制造方法

    公开(公告)号：US20060211227A1

    公开(公告)日：2006-09-21

    申请号：US11084524

    申请日：2005-03-21

    申请人： Linghui Chen ,  Blanca Kruse ,  Mark Duskin ,  John Moran

    发明人： Linghui Chen ,  Blanca Kruse ,  Mark Duskin ,  John Moran

    IPC分类号： H01L21/28

    CPC分类号： H01L29/0692 ,  H01L29/66143 ,  H01L29/872

    摘要： A Schottky diode capable of sustaining a voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer of N-type conductivity is disposed on a semiconductor substrate of N-type conductivity. A guard ring of P-type conductivity extends into the epitaxial layer from its surface. A stacked structure is formed on a portion of the guard ring and a portion of the epitaxial layer. The stacked structure includes a layer of semi-insulating semiconductor material disposed on a layer of dielectric material. A first metal layer is formed on the portion of the epitaxial layer adjacent a first side of the stacked structure and on a first portion of the stacked structure. A second metal layer is formed on the portion of the epitaxial layer adjacent a second side of the stacked structure and on a second portion of the stacked structure.

    摘要翻译： 能够维持大于约250伏的电压的肖特基二极管及其制造方法。 N型导电性的外延层配置在N型导电性的半导体基板上。 P型导电保护环从其表面延伸到外延层中。 在保护环的一部分和外延层的一部分上形成层叠结构。 堆叠结构包括设置在电介质材料层上的半绝缘半导体材料层。 第一金属层形成在邻近层叠结构的第一侧的外延层的部分上，并且在堆叠结构的第一部分上。 第二金属层形成在与层叠结构的第二侧相邻的外延层的部分上并且在堆叠结构的第二部分上。

    Schottky diode and method of manufacture
    7.
    发明授权
    Schottky diode and method of manufacture 有权
    肖特基二极管及其制造方法

    公开(公告)号：US07820473B2

    公开(公告)日：2010-10-26

    申请号：US11084524

    申请日：2005-03-21

    申请人： Linghui Chen ,  Blanca Estela Kruse ,  Mark Duskin ,  John D. Moran

    发明人： Linghui Chen ,  Blanca Estela Kruse ,  Mark Duskin ,  John D. Moran

    IPC分类号： H01L21/00

    CPC分类号： H01L29/0692 ,  H01L29/66143 ,  H01L29/872

    摘要： A Schottky diode capable of sustaining a voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer of N-type conductivity is disposed on a semiconductor substrate of N-type conductivity. A guard ring of P-type conductivity extends into the epitaxial layer from its surface. A stacked structure is formed on a portion of the guard ring and a portion of the epitaxial layer. The stacked structure includes a layer of semi-insulating semiconductor material disposed on a layer of dielectric material. A first metal layer is formed on the portion of the epitaxial layer adjacent a first side of the stacked structure and on a first portion of the stacked structure. A second metal layer is formed on the portion of the epitaxial layer adjacent a second side of the stacked structure and on a second portion of the stacked structure.

    摘要翻译： 能够维持大于约250伏的电压的肖特基二极管及其制造方法。 N型导电性的外延层配置在N型导电性的半导体基板上。 P型导电保护环从其表面延伸到外延层中。 在保护环的一部分和外延层的一部分上形成层叠结构。 堆叠结构包括设置在电介质材料层上的半绝缘半导体材料层。 第一金属层形成在邻近层叠结构的第一侧的外延层的部分上，并且在堆叠结构的第一部分上。 第二金属层形成在与层叠结构的第二侧相邻的外延层的部分上并且在堆叠结构的第二部分上。

    Schottky diode and method of manufacture
    8.
    发明申请
    Schottky diode and method of manufacture 有权
    肖特基二极管及其制造方法

    公开(公告)号：US20060208332A1

    公开(公告)日：2006-09-21

    申请号：US11084471

    申请日：2005-03-21

    申请人： Mark Duskin ,  Blanca Kruse

    发明人： Mark Duskin ,  Blanca Kruse

    IPC分类号： H01L27/095

    CPC分类号： H01L29/66143 ,  H01L29/0692 ,  H01L29/872

    摘要： A Schottky diode capable of sustaining a breakdown voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer disposed on a semiconductor substrate has a thickness of at least about 15 micrometers and an impurity concentration ranging from about 1×1014 atoms per cubic centimeter to about 1×1015 atoms per cubic centimeter. A guard ring extends from about 3 micrometers to about 15 micrometers into the epitaxial layer. A dielectric material is formed over the epitaxial layer and a portion of the dielectric material is removed to expose a portion of the guard ring and a portion of the epitaxial layer within the guard ring. An electrically conductive material is formed over the exposed portion of the epitaxial layer and an electrically conductive material is formed in contact with a bottom surface of the semiconductor substrate.

    摘要翻译： 能够维持大于约250伏的击穿电压的肖特基二极管及其制造方法。 设置在半导体衬底上的外延层的厚度为至少约15微米，杂质浓度范围为每立方厘米约1×10 14原子/约1×10 15原子/ 立方厘米。 保护环从约3微米到约15微米延伸到外延层中。 介电材料形成在外延层上，并且介电材料的一部分被去除以暴露保护环的一部分和保护环内的外延层的一部分。 在外延层的暴露部分之上形成导电材料，并且形成与半导体衬底的底表面接触的导电材料。