公开(公告)号：US08003478B2

公开(公告)日：2011-08-23

申请号：US12134401

申请日：2008-06-06

申请人： Mark Duskin ,  Suem Ping Loo ,  Ali Salih

发明人： Mark Duskin ,  Suem Ping Loo ,  Ali Salih

IPC分类号： H01L21/20

CPC分类号： H01L27/0814 ,  H01L27/0255 ,  H01L29/0642 ,  H01L29/861 ,  H01L29/866 ,  Y10S438/983

摘要： In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic.

摘要翻译： 在一个实施例中，形成双向二极管结构以具有基本对称的电流 - 电压特性。

公开(公告)号：US08138520B2

公开(公告)日：2012-03-20

申请号：US13177785

申请日：2011-07-07

申请人： Mark Duskin ,  Suem Ping Loo ,  Ali Salih

发明人： Mark Duskin ,  Suem Ping Loo ,  Ali Salih

IPC分类号： H01L29/66

CPC分类号： H01L27/0814 ,  H01L27/0255 ,  H01L29/0642 ,  H01L29/861 ,  H01L29/866 ,  Y10S438/983

摘要： In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic.

摘要翻译： 在一个实施例中，形成双向二极管结构以具有基本对称的电流 - 电压特性。

公开(公告)号：US20110266591A1

公开(公告)日：2011-11-03

申请号：US13177785

申请日：2011-07-07

申请人： Mark Duskin ,  Suem Ping Loo ,  Ali Salih

发明人： Mark Duskin ,  Suem Ping Loo ,  Ali Salih

IPC分类号： H01L29/66

CPC分类号： H01L27/0814 ,  H01L27/0255 ,  H01L29/0642 ,  H01L29/861 ,  H01L29/866 ,  Y10S438/983

摘要： In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic.

摘要翻译： 在一个实施例中，形成双向二极管结构以具有基本对称的电流 - 电压特性。

公开(公告)号：US20090302424A1

公开(公告)日：2009-12-10

申请号：US12134401

申请日：2008-06-06

申请人： Mark Duskin ,  Suem Ping Loo ,  Ali Salih

发明人： Mark Duskin ,  Suem Ping Loo ,  Ali Salih

IPC分类号： H01L21/329 ,  H01L29/866

CPC分类号： H01L27/0814 ,  H01L27/0255 ,  H01L29/0642 ,  H01L29/861 ,  H01L29/866 ,  Y10S438/983

摘要： In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic.

摘要翻译： 在一个实施例中，形成双向二极管结构以具有基本对称的电流 - 电压特性。

公开(公告)号：US20090273868A1

公开(公告)日：2009-11-05

申请号：US12116745

申请日：2008-05-07

申请人： Mingjiao Liu ,  Ali Salih ,  Emmanuel Saucedo-Flores ,  Suem Ping Loo

发明人： Mingjiao Liu ,  Ali Salih ,  Emmanuel Saucedo-Flores ,  Suem Ping Loo

IPC分类号： H02H9/04

CPC分类号： H01L27/0262 ,  H01L29/7436 ,  H01L29/866

摘要： A transient voltage suppressor and a method for protecting against surge and electrostatic discharge events. A semiconductor substrate of a first conductivity type has gate and anode regions of a second conductivity type formed therein. A PN junction diode is formed from a portion of the gate region and the semiconductor substrate. A cathode is formed adjacent to another portion of the gate region. A thyristor is formed from the cathode, the gate region, the substrate, and the anode region. Zener diodes are formed from other portions of the gate region and the semiconductor substrate. A second Zener diode has a breakdown voltage that is greater than a breakdown voltage of a first Zener diode and that is greater than a breakover voltage of the thyristor. The first Zener diode protects against a surge event and the second Zener diode protects against an electrostatic discharge event.

公开(公告)号：US20090273876A1

公开(公告)日：2009-11-05

申请号：US12113843

申请日：2008-05-01

申请人： Mingjiao Liu ,  Ali Salih ,  Emmanuel Saucedo-Flores ,  Suem Ping Loo

发明人： Mingjiao Liu ,  Ali Salih ,  Emmanuel Saucedo-Flores ,  Suem Ping Loo

IPC分类号： H02H9/04

CPC分类号： H01L27/0262 ,  H01L29/7436 ,  H01L29/866

摘要： A transient voltage suppressor and a method for protecting against surge and electrostatic discharge events. A semiconductor substrate of a first conductivity type has gate and anode regions of a second conductivity type formed therein. A PN junction diode is formed from a portion of the gate region and the semiconductor substrate. A cathode is formed adjacent to another portion of the gate region. A thyristor is formed from the cathode, the gate region, the substrate, and the anode region. Zener diodes are formed from other portions of the gate region and the semiconductor substrate. A second Zener diode has a breakdown voltage that is greater than a breakdown voltage of a first Zener diode and that is greater than a breakover voltage of the thyristor. The first Zener diode protects against a surge event and the second Zener diode protects against an electrostatic discharge event.

摘要翻译： 瞬态电压抑制器和防止浪涌和静电放电事件的方法。 第一导电类型的半导体衬底具有形成在其中的第二导电类型的栅极和阳极区域。 PN结二极管由栅极区域和半导体衬底的一部分形成。 阴极与栅极区域的另一部分相邻地形成。 从阴极，栅极区域，衬底和阳极区域形成晶闸管。 齐纳二极管由栅极区域和半导体衬底的其它部分形成。 第二齐纳二极管具有大于第一齐纳二极管的击穿电压并且大于晶闸管的跳变电压的击穿电压。 第一个齐纳二极管可防止浪涌事件，第二个齐纳二极管可防止静电放电事件。

公开(公告)号：US08339758B2

公开(公告)日：2012-12-25

申请号：US12113843

申请日：2008-05-01

申请人： Mingjiao Liu ,  Ali Salih ,  Emmanuel Saucedo-Flores ,  Suem Ping Loo

发明人： Mingjiao Liu ,  Ali Salih ,  Emmanuel Saucedo-Flores ,  Suem Ping Loo

IPC分类号： H02H9/04

CPC分类号： H01L27/0262 ,  H01L29/7436 ,  H01L29/866

摘要： A transient voltage suppressor and a method for protecting against surge and electrostatic discharge events. A semiconductor substrate of a first conductivity type has gate and anode regions of a second conductivity type formed therein. A PN junction diode is formed from a portion of the gate region and the semiconductor substrate. A cathode is formed adjacent to another portion of the gate region. A thyristor is formed from the cathode, the gate region, the substrate, and the anode region. Zener diodes are formed from other portions of the gate region and the semiconductor substrate. A second Zener diode has a breakdown voltage that is greater than a breakdown voltage of a first Zener diode and that is greater than a breakover voltage of the thyristor. The first Zener diode protects against a surge event and the second Zener diode protects against an electrostatic discharge event.

摘要翻译： 瞬态电压抑制器和防止浪涌和静电放电事件的方法。 第一导电类型的半导体衬底具有形成在其中的第二导电类型的栅极和阳极区域。 PN结二极管由栅极区域和半导体衬底的一部分形成。 阴极与栅极区域的另一部分相邻地形成。 从阴极，栅极区域，衬底和阳极区域形成晶闸管。 齐纳二极管由栅极区域和半导体衬底的其它部分形成。 第二齐纳二极管具有大于第一齐纳二极管的击穿电压并且大于晶闸管的跳变电压的击穿电压。 第一个齐纳二极管可防止浪涌事件，第二个齐纳二极管可防止静电放电事件。

公开(公告)号：US08309422B2

公开(公告)日：2012-11-13

申请号：US12890878

申请日：2010-09-27

申请人： David D. Marreiro ,  Sudhama C. Shastri ,  Ali Salih ,  Mingjiao Liu ,  John Michael Parsey, Jr.

发明人： David D. Marreiro ,  Sudhama C. Shastri ,  Ali Salih ,  Mingjiao Liu ,  John Michael Parsey, Jr.

IPC分类号： H01L29/866

CPC分类号： H01L27/0255 ,  H01L29/8611 ,  H01L29/866

摘要： In one embodiment, an ESD device is configured to include a zener diode and a P-N diode and to have a conductor that provides a current path between the zener diode and the P-N diode.

摘要翻译： 在一个实施例中，ESD器件被配置为包括齐纳二极管和P-N二极管，并且具有在齐纳二极管和P-N二极管之间提供电流路径的导体。

公开(公告)号：US08089095B2

公开(公告)日：2012-01-03

申请号：US12860154

申请日：2010-08-20

申请人： Ali Salih ,  Mingjiao Liu

发明人： Ali Salih ,  Mingjiao Liu

IPC分类号： H01L29/40 ,  H01L29/74 ,  H01L31/111 ,  H01L29/30 ,  H01L29/866 ,  H01L29/88 ,  H01L29/32 ,  H01L29/36 ,  H01L29/72 ,  H01L29/73 ,  H01L23/58

CPC分类号： H01L29/866 ,  H01L27/0255 ,  H01L29/861 ,  Y10S148/174 ,  Y10S438/983

摘要： In one embodiment, a two terminal multi-channel ESD device is configured to include a zener diode and a plurality of P-N diodes. In another embodiment, the ESD devices has an asymmetrical characteristic.

摘要翻译： 在一个实施例中，双端子多通道ESD器件被配置为包括齐纳二极管和多个P-N二极管。 在另一个实施例中，ESD器件具有非对称特性。

公开(公告)号：US08039359B2

公开(公告)日：2011-10-18

申请号：US12395076

申请日：2009-02-27

申请人： Thomas Keena ,  Ki Chang ,  Francine Y. Robb ,  Mingjiao Liu ,  Ali Salih ,  John Michael Parsey, Jr. ,  George Chang

发明人： Thomas Keena ,  Ki Chang ,  Francine Y. Robb ,  Mingjiao Liu ,  Ali Salih ,  John Michael Parsey, Jr. ,  George Chang

IPC分类号： H01L21/76 ,  H01L23/62

CPC分类号： H01L29/8613 ,  H01L27/0255 ,  H01L29/8618 ,  Y10S257/929 ,  Y10S438/966 ,  Y10S438/983

摘要： In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.

摘要翻译： 在一个实施例中，ESD器件使用ESD器件内深度的高掺杂P和N区域形成具有受控击穿电压的齐纳二极管。