TE polarizer based on SOI platform

    公开(公告)号:US11662521B2

    公开(公告)日:2023-05-30

    申请号:US17397183

    申请日:2021-08-09

    Inventor: Jie Lin Masaki Kato

    CPC classification number: G02B6/276 G02B6/126 G02B2006/12061 G02B2006/12116

    Abstract: A silicon photonic device includes a silicon-on-insulator substrate, a waveguide, and a plate. The silicon-on-insulator substrate includes a silicon layer and a silicon dioxide layer. The waveguide is disposed on the silicon-on-insulator substrate. The silicon dioxide layer at least partially overlays the waveguide. The plate exhibits metallic characteristics and is at least partially embedded in the silicon dioxide layer of the silicon-on-insulator substrate. The plate is spaced apart from the waveguide and is configured to mitigate transverse magnetic emission propagating through the waveguide.

    Wide-band multimode interference coupler with arbitrary power splitting ratio and method for making the same

    公开(公告)号:US11624873B2

    公开(公告)日:2023-04-11

    申请号:US17218748

    申请日:2021-03-31

    Inventor: Hong Cai Jie Lin

    Abstract: A method for making a multimode interference (MMI) coupler with an arbitrary desired splitting ratio includes forming a thin-film of silicon-nitride material overlying a SOI substrate. The method further includes obtaining geometric parameters of a standard MIMI coupler including a rectangular MMI block and one input port and two output ports in taper shape with one of standard splitting ratios under self-imaging principle which is close to the desired splitting ratio. Additionally, the method includes tunning the input port to an off-center position at front edge of the MMI block. The method further includes making a first output port to a first off-center position flushing with a side edge of the MMI block, adjusting a second output port to a second off-center position. The method includes tunning the MMI block to obtain optimized geometric parameters for approaching the selected arbitrary splitting ratio, and etching the thin-film of silicon-nitride material.

    Method for detecting low-power optical signal with high sensitivity

    公开(公告)号:US11460634B2

    公开(公告)日:2022-10-04

    申请号:US17012629

    申请日:2020-09-04

    Abstract: A method for making a pair of photodiodes to detect low-power optical signal includes providing a waveguide including one or more branches in a silicon photonics substrate to deliver an input optical signal to the silicon photonics integrated circuit; forming a pair of nearly redundant photodiodes in silicon photonics platform in the silicon photonics substrate. coupling a first one of the pair of nearly redundant photodiodes optically to each of the one or more branches for receiving the input optical signal combined from all of the one or more branches; coupling a second one of the pair of nearly redundant photodiodes electrically in series to the first one of the pair of nearly redundant photodiodes; and drawing a current from the first one of the pair of nearly redundant photodiodes under a reversed bias voltage applied to the pair of nearly redundant photodiodes.

    Silicon optical modulator, method for making the same

    公开(公告)号:US11686991B1

    公开(公告)日:2023-06-27

    申请号:US17397630

    申请日:2021-08-09

    CPC classification number: G02F1/2257 G02B6/1347 G02F1/212

    Abstract: A silicon optical modulator includes a silicon-on-insulator substrate and a first waveguide and a second waveguide arranged parallel to each other in the silicon-on-insulator substrate. The first waveguide includes a first PN junction. The second waveguide includes a second PN junction. At least one of the first PN junction and the second PN junction is disposed at an interface between a P type doped region and a N type doped region. The interface has an irregular shape that is not perpendicular to a plane in which the silicon-on-insulator substrate lies.

    Circuit for detecting low-power optical data signal

    公开(公告)号:US11740406B2

    公开(公告)日:2023-08-29

    申请号:US17901182

    申请日:2022-09-01

    CPC classification number: G02B6/12019 H04B10/43 H04B10/6165

    Abstract: A circuit for detecting an optical data signal includes a photonics substrate and first and second photodiodes formed in the photonics substrate. The first photodiode is configured to receive, via an input port formed in the photonics substrate, a first portion of the optical data signal and convert light power of the first portion of the optical data signal to generate a first current based on the optical data signal. The second photodiode is configured to output a second current without receiving any portion of the optical data signal. The second current corresponds to a dark current induced in the second photodiode. The circuit is configured to subtract the second current from the first current to generate an output signal corresponding to a power of the optical data signal without dark current induced in the first photodiode.

    Colorless splitter based on SOI platform

    公开(公告)号:US11385407B2

    公开(公告)日:2022-07-12

    申请号:US16849197

    申请日:2020-04-15

    Inventor: Jie Lin

    Abstract: An optical splitter includes a silicon-on-insulator substrate having a cladding layer. The optical splitter also includes a first waveguide of a first width and a first length buried in the cladding layer and a second waveguide of a second width and a second length buried in the cladding layer disposed in close proximity of the first waveguide by a gap distance. A ratio of the second width over the first width is configured to be smaller than 1 while the first length, the second length, and the gap distance are configured to allow evanescent coupling of a first confined mode of an optical signal in the first waveguide into the second waveguide with a certain splitting ratio being achieved in a range of 1% to

    Multi-Junction Broadband Photodetector

    公开(公告)号:US20250120189A1

    公开(公告)日:2025-04-10

    申请号:US18909993

    申请日:2024-10-09

    Abstract: An optical communication system includes an optical waveguide and a photodetector (PD). The optical waveguide is arranged to receive and guide an optical signal. The PD is configured to receive the optical signal from the optical waveguide and to convert the optical signal into an electrical signal. The PD includes a stack of layers including at least (i) first layers including two or more semiconductor layers forming a reverse-biased semiconductor junction configured to produce the electrical signal in response to the optical signal impinging thereon, and (ii) second layers forming a capacitance component that in is connected with series the reverse-biased semiconductor junction. The PD further includes a first electrode and a second electrode, configured to (i) apply one or more voltages that reverse-bias the reverse-biased semiconductor junction and (ii) output the electrical signal.

    Optical transceiver with multimode interferometers

    公开(公告)号:US20240022329A1

    公开(公告)日:2024-01-18

    申请号:US18353084

    申请日:2023-07-16

    CPC classification number: H04B10/40 H04B10/11 G02B6/29344

    Abstract: An optical transceiver includes optical circuitry disposed on a substrate and comprising a transmitter and a receiver. The circuitry includes least one multi-mode interferometer (MMI), including a multi-mode waveguide comprising an input face and an output face, the input and output faces being bisected by a longitudinal axis, the multi-mode waveguide having a predefined width transverse to the longitudinal axis. Ports are coupled to respective waveguides and are configured to launch one or more input beams through the input face and receive one or more output beams from the output face. The ports include, on at least one of the faces, two or more ports at respective locations that are offset transversely from the longitudinal axis by at least λ0/300 from respective base transverse displacements that are equal to integer fractions of the width.

    Temperature insensitive distributed strain monitoring apparatus and method

    公开(公告)号:US11644305B2

    公开(公告)日:2023-05-09

    申请号:US17343077

    申请日:2021-06-09

    Abstract: An apparatus for monitoring strain in an optical chip in silicon photonics platform. The apparatus includes a silicon photonics substrate shared with the optical chip. Additionally, the apparatus includes an optical input configured in the silicon photonics substrate to supply an input signal of a single wavelength. The apparatus further includes a first waveguide arm and a second waveguide arm embedded in the silicon photonics substrate to form an on-chip interferometer. The second waveguide arm forms a delay line being disposed at a region in or adjacent to the optical chip. The on-chip interferometer is configured to generate an interference pattern serving as an indicator of strain distributed at the region in or adjacent to the optical chip. The interference pattern is caused by a temperature-independent phase shift at the single wavelength of the interferometer between the first waveguide arm and the second waveguide arm.

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