Magnetic recording medium
    2.
    发明授权
    Magnetic recording medium 失效
    磁记录介质

    公开(公告)号:US06383667B1

    公开(公告)日:2002-05-07

    申请号:US09413813

    申请日:1999-10-07

    IPC分类号: G11B566

    摘要: A magnetic recording medium includes a substrate, an underlayer provided on the substrate, a Co alloy magnetic film formed through the underlayer, and a protective film for protecting the magnetic film, wherein the underlayer has a two-layer structure of an lower underlayer contacted with the substrate and an upper underlayer contacted with the Co alloy magnetic film, the upper underlayer is a Co—Crx—My alloy film having a hexagonal close-packed structure, where 25 atomic %≦x+y≦50 atomic %, 0.5 atomic %≦y, nonmagnetic element M is one selected from the group of elements B, Si, Ge, C, Al, P, Ti, V, Nb, Zr, Hf, Mn, Rh, Os, Ir, Re, Pd, Pt, Mo, Ta, W, Ag and Au. Thereby the medium can be increased in its coercive force and can be improved in its thermal stability characteristics.

    摘要翻译: 磁记录介质包括基板,设置在基板上的底层,通过底层形成的Co合金磁膜和用于保护磁性膜的保护膜,其中底层具有与下层接触的下层结构 基底和与Co合金磁膜接触的上基底层,上底层是具有六方密堆积结构的Co-Crx-My合金膜,其中25原子%<= x + y <= 50原子%,0.5 原子%<= y,非磁性元素M是选自元素B,Si,Ge,C,Al,P,Ti,V,Nb,Zr,Hf,Mn,Rh,Os,Ir,Re,Pd ,Pt,Mo,Ta,W,Ag和Au。 因此,介质的矫顽力可以提高,并且可以提高其热稳定性。

    Manganese-aluminum and manganese-silicon magnetic films, and magnetic
recording medium
    3.
    发明授权
    Manganese-aluminum and manganese-silicon magnetic films, and magnetic recording medium 失效
    锰 - 铝和锰 - 硅磁性膜和磁记录介质

    公开(公告)号:US5231294A

    公开(公告)日:1993-07-27

    申请号:US679991

    申请日:1991-03-29

    IPC分类号: G11B5/66 H01F10/28 H01F10/32

    摘要: A ferromagnetic thin film of manganese and aluminum having varied atomic concentrations of manganese and aluminum in the direction perpendicular to the film plane, preferably the Mn atomic concentration being preferably in a range of 45 to 65% by atom, has a spontaneous magnetization equivalent to that of the bulk of manganese-aluminum alloy and also a high magnetic anisotropy.In addition, a magnetic recording medium comprises a substrate and a magnetic film formed on the substrate, the magnetic film being a thin film in a stacked structure of thin layers of manganese and thin layers of aluminum, laid open upon one another alternatingly in the film thickness direction.Finally, a manganese-silicon magnetic multi-layer film comprises thin layers of manganese and thin layers of silicon laid upon one another alternatingly.

    摘要翻译: 锰和铝的铁磁薄膜在垂直于膜平面的方向上具有不同的锰和铝原子浓度,优选Mn原子浓度优选在45至65原子%的范围内,具有等同于其的自发磁化强度 的大量锰 - 铝合金,也具有高磁各向异性。 此外,磁记录介质包括基板和形成在基板上的磁性膜,该磁性膜是薄膜层叠结构的薄膜和薄层的铝层,在薄膜中交替地相互铺设 厚度方向。 最后,锰 - 硅磁性多层膜交替地包含彼此相互沉积的锰和薄层的薄层。

    Perpendicular magnetic recording medium and magnetic storage apparatus using the same
    5.
    发明授权
    Perpendicular magnetic recording medium and magnetic storage apparatus using the same 失效
    垂直磁记录介质及使用其的磁存储装置

    公开(公告)号:US06183893B2

    公开(公告)日:2001-02-06

    申请号:US09285751

    申请日:1999-04-05

    IPC分类号: B32B1500

    摘要: The present invention relates to a perpendicular magnetic recording medium and a magnetic storage apparatus which are improved to be suitable for high-density magnetic recording. An object thereof is to provide the perpendicular magnetic recording medium and the magnetic storage apparatus which have a low noise property for realizing a recording density of 10 Gb/in.2 or more and a high stability against thermal fluctuation. The perpendicular magnetic recording medium comprising a perpendicular magnetic film formed through an underlayer on a nonmagnetic substrate, wherein the underlayer comprises a material having a hexagonal close packed structure or an amorphous structure, and has a first underlayer nearer to the substrate, and a second underlayer having a hexagonal close packed structure formed on the first underlayer and a preferred growth orientation of [0001] and comprising a material capable of hetero-epitaxy growth onto the perpendicular magnetic film.

    摘要翻译: 本发明涉及一种改进为适合于高密度磁记录的垂直磁记录介质和磁存储装置。 其目的是提供具有低噪声特性的垂直磁记录介质和磁存储装置,以实现10Gb / in.2以上的记录密度和对热波动的高稳定性。垂直磁记录介质包括 在非磁性基板上通过下层形成的垂直磁性膜,其中,所述下层包括具有六方密堆积结构或非晶结构的材料,并且具有更靠近所述基板的第一底层和具有六方密堆积结构的第二底层 形成在第一底层上,并且具有优选的生长方向,并且包括能够在垂直磁性膜上进行异质外延生长的材料。