Electronic device, method for producing electron source and image forming device, and apparatus for producing electronic device
    2.
    发明授权
    Electronic device, method for producing electron source and image forming device, and apparatus for producing electronic device 失效
    电子装置,用于制造电子源的方法和图像形成装置,以及用于制造电子装置的装置

    公开(公告)号:US06815001B1

    公开(公告)日:2004-11-09

    申请号:US09647953

    申请日:2000-12-11

    IPC分类号: B05D512

    摘要: A method of manufacturing an electronic device including a step of giving a droplet 12 of a liquid containing a formation material of a member that constitutes the electronic device to a plurality of portions on a substrate 1 while said substrate 1 and a droplet ejecting portion 7 are moved relatively in an in-surface direction of said substrate 1, wherein the droplet 12 is given while a position on a droplet given surface to which the droplet is given is corrected in accordance with the distribution of distances between the ejecting portion 7 and the droplet 12 given surface on the substrate which occurs when the substrate 1 and the ejecting portion 7 are relatively moved. Thereby forming the member constituting the electronic device accurately at the plural portion on the substrate 1, and thus forming plural electronic device of same charactoristics.

    摘要翻译: 一种制造电子器件的方法,包括以下步骤:当基片1和墨滴喷射部分7为基底1时,将包含构成电子器件的构件的形成材料的液体的液滴12分配给基片1上的多个部分 根据喷射部分7和液滴之间的距离的分布来校正在液滴给定表面上给出液滴的位置,同时在所述基板1的表面方向上相对移动,其中给出液滴12, 在衬底1和排出部7相对移动时发生的衬底上的给定表面。 从而在基板1上的多个部分处精确地形成构成电子装置的构件,从而形成具有相同特征的多个电子装置。

    Method for production of electron source substrate provided with electron emitting element and method for production of electronic device using the substrate
    3.
    发明授权
    Method for production of electron source substrate provided with electron emitting element and method for production of electronic device using the substrate 失效
    具有电子发射元件的电子源基片的制造方法和使用该基片的电子器件的制造方法

    公开(公告)号:US06514559B1

    公开(公告)日:2003-02-04

    申请号:US09044016

    申请日:1998-03-19

    IPC分类号: B05D512

    CPC分类号: H01J9/027 H01J2329/00

    摘要: A novel process for producing an electron source substrate is disclosed for formation of electron-emitting element at high efficiency with less shape irregularity. In the process, the region for electroconductive film formation is divided into plural subregions on which an electroconductive film is formed respectively. In forming the electroconductive film by application of plural liquids, the time interval between the application of the two drops is controlled to be larger than the time length necessary for suppressing the spreading of the succeedingly applied liquid within an allowable limit.

    摘要翻译: 公开了一种制造电子源基片的新方法,用于以较低的形状不规则形成高效率的电子发射元件。 在该过程中,用于导电膜形成的区域被分成多个分别形成导电膜的子区域。 在通过施加多种液体形成导电膜时,将两滴的施加之间的时间间隔控制为大于在随后施加的液体的扩散中允许的极限内所需的时间长度。

    Method for production of electron source substrate provided with electron emitting element and method for production of electronic device using the substrate
    6.
    发明授权
    Method for production of electron source substrate provided with electron emitting element and method for production of electronic device using the substrate 失效
    具有电子发射元件的电子源基板的制造方法及使用该基板的电子器件的制造方法

    公开(公告)号:US07442405B2

    公开(公告)日:2008-10-28

    申请号:US10853762

    申请日:2004-05-26

    IPC分类号: B05D5/12

    CPC分类号: H01J9/027 H01J2329/00

    摘要: A novel process for producing an electron source substrate is disclosed for formation of electron-emitting element at high efficiency with less shape irregularity. In the process, the region for electroconductive film formation is divided into plural subregions on which an electroconductive film is formed respectively. In forming the electroconductive film by application of plural liquids, the time interval between the application of the two drops is controlled to be larger than the time length necessary for suppressing the spreading of the succeedingly applied liquid within an allowable limit.

    摘要翻译: 公开了一种制造电子源基片的新方法,用于以较低的形状不规则形成高效率的电子发射元件。 在该过程中,用于导电膜形成的区域被分成多个分别形成导电膜的子区域。 在通过施加多种液体形成导电膜时,将两滴的施加之间的时间间隔控制为大于在随后施加的液体的扩散中允许的极限内所需的时间长度。