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公开(公告)号：US20120138944A1
公开(公告)日：2012-06-07
申请号：US13294654
申请日：2011-11-11
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/7787 , H01L29/41766 , H01L29/42376 , H01L29/47 , H01L29/513 , H01L29/66462
摘要： A compound semiconductor device includes: a compound semiconductor layer; a first film formed over the compound semiconductor layer, the first film being in a negatively charged state or a non-charged state at an interface with the compound semiconductor layer; a second film formed over the first film, the second film being in a positively charged state at an interface with the first film; and a gate electrode to be embedded in an opening formed in the second film.
摘要翻译： 化合物半导体器件包括：化合物半导体层; 形成在所述化合物半导体层上的第一膜，所述第一膜在与所述化合物半导体层的界面处于带负电状态或非带电状态; 形成在所述第一膜上的第二膜，所述第二膜在与所述第一膜的界面处于带电状态; 以及嵌入到形成在第二膜中的开口中的栅电极。
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公开(公告)号：US20120138948A1
公开(公告)日：2012-06-07
申请号：US13294726
申请日：2011-11-11
IPC分类号： H01L29/778 , H01L21/20
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/4236 , H01L29/7787
摘要： A compound semiconductor device includes: an electron transport layer formed over a substrate; an electron supply layer formed over the electron transport layer; and a cap layer formed over the electron supply layer; the cap layer includes a first compound semiconductor layer containing GaN; a second compound semiconductor layer containing AlN, which is formed over the first compound semiconductor layer; a third compound semiconductor layer containing GaN, which is formed over the second compound semiconductor layer; and at least one of a first AlGaN-containing layer and a second AlGaN-containing layer, with the first AlGaN-containing layer formed between the first compound semiconductor layer and the second compound semiconductor layer and the Al content increases toward the second compound semiconductor layer, and the second AlGaN-containing layer formed between the second compound semiconductor layer and the third compound semiconductor layer and the Al content increases toward the second compound semiconductor layer.
摘要翻译： 化合物半导体器件包括：形成在衬底上的电子传输层; 形成在电子传输层上的电子供应层; 以及形成在所述电子供给层上的盖层; 盖层包括含有GaN的第一化合物半导体层; 含有AlN的第二化合物半导体层，其形成在所述第一化合物半导体层上; 含有GaN的第三化合物半导体层，其形成在所述第二化合物半导体层上; 以及第一AlGaN含有层和第二含AlGaN的层中的至少一个，其中形成在第一化合物半导体层和第二化合物半导体层之间的第一AlGaN含有层，并且Al含量朝向第二化合物半导体层增加 并且形成在第二化合物半导体层和第三化合物半导体层之间的第二AlGaN含量层和Al含量朝向第二化合物半导体层增加。
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公开(公告)号：US20110079771A1
公开(公告)日：2011-04-07
申请号：US12886822
申请日：2010-09-21
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/778 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： An intermediate layer composed of i-AlN is formed between a channel layer and an electron donor layer, a first opening is formed in an electron donor layer, at a position where a gate electrode will be formed later, while using an intermediate layer as an etching stopper, a second opening is formed in the intermediate layer so as to be positionally aligned with the first opening, by wet etching using a hot phosphoric acid solution, and a gate electrode is formed so that the lower portion thereof fill the first and second openings while placing a gate insulating film in between, and so that the head portion thereof projects above the cap structure.
摘要翻译： 在沟道层和电子给体层之间形成由i-AlN构成的中间层，在电子供体层中形成第一开口，在稍后将形成栅电极的位置，同时使用中间层作为 蚀刻停止器，通过使用热磷酸溶液的湿蚀刻，在中间层中形成第二开口以与第一开口位置对准，并且形成栅电极，使得其下部填充第一和第二 开口，同时将栅极绝缘膜放置在其间，并且使得其头部突出在盖结构的上方。
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公开(公告)号：US20120196419A1
公开(公告)日：2012-08-02
申请号：US13443228
申请日：2012-04-10
IPC分类号： H01L21/336
CPC分类号： H01L29/41 , H01L29/2003 , H01L29/42316 , H01L29/7786 , H01L29/7787
摘要： In an MIS-type GaN-FET, a base layer made of a conductive nitride including no oxygen, here, TaN, is provided on a surface layer as a nitride semiconductor layer to cover at least an area of a lower face of a gate insulation film made of Ta2O5 under a gate electrode.
摘要翻译： 在MIS型GaN-FET中，作为氮化物半导体层，在作为氮化物半导体层的表面层上设置由不含氧的导电性氮化物构成的基底层Ta N，以覆盖栅极绝缘体的下表面的至少一部分 由Ta2O5制成的薄膜在栅电极下。
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公开(公告)号：US20130075789A1
公开(公告)日：2013-03-28
申请号：US13606542
申请日：2012-09-07
IPC分类号： H01L29/778 , H01L21/336
CPC分类号： H01L29/42364 , H01L21/28264 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L2224/0603 , H01L2224/48247 , H01L2224/48257 , H01L2224/48472 , H01L2224/4903 , H03F1/3247
摘要： A semiconductor device, comprising: a first semiconductor layer disposed on a substrate; a second semiconductor layer disposed on the first semiconductor layer; a lower insulating film disposed on the second semiconductor layer; a p-type electroconductive oxide film disposed on the lower insulating film; an upper insulating film disposed on the oxide film; and a gate electrode disposed on the upper insulating film, wherein the lower insulating film under the gate electrode has a depressed portion.
摘要翻译： 一种半导体器件，包括：设置在基板上的第一半导体层; 设置在所述第一半导体层上的第二半导体层; 设置在所述第二半导体层上的下绝缘膜; 设置在下绝缘膜上的p型导电氧化物膜; 设置在氧化膜上的上绝缘膜; 以及设置在所述上绝缘膜上的栅电极，其中所述栅电极下的下绝缘膜具有凹陷部。
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公开(公告)号：US20110079822A1
公开(公告)日：2011-04-07
申请号：US12895970
申请日：2010-10-01
申请人： Masahito KANAMURA
发明人： Masahito KANAMURA
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/28587 , H01L29/2003 , H01L29/4175 , H01L29/41766 , H01L29/66462 , H01L29/7787
摘要： A compound semiconductor device includes an electron transit layer; an electron supply layer formed over the electron transit layer; a first recessed portion and a second recessed portion formed in the electron supply layer; a chemical compound semiconductor layer including impurities that buries the first recessed portion and the second recessed portion and covers over the electron supply layer; a source electrode formed over the chemical compound semiconductor layer which buries the first recessed portion; a drain electrode formed over the chemical compound semiconductor layer which buries the second recessed portion; and a gate electrode formed over the electron supply layer between the source electrode and the drain electrode, wherein, in the chemical compound semiconductor layer, a concentration of impurities included below the source electrode and the drain electrode is higher than a concentration of impurities included near the gate electrode.
摘要翻译： 化合物半导体器件包括电子转移层; 形成在电子转移层上的电子供应层; 形成在电子供给层中的第一凹部和第二凹部; 化学化合物半导体层，其包含埋入所述第一凹部和所述第二凹部并覆盖所述电子供给层的杂质; 在所述化学化合物半导体层上形成的掩模所述第一凹部的源电极; 漏极，形成在所述化学化合物半导体层上，所述漏极埋设所述第二凹部; 以及形成在源电极和漏电极之间的电子供给层上的栅电极，其中，在化合物半导体层中，包含在源电极和漏电极下方的杂质的浓度高于包含在附近的杂质的浓度 栅电极。
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