公开(公告)号：US08372346B2

公开(公告)日：2013-02-12

申请号：US13047214

申请日：2011-03-14

申请人： Kazuki Mizushima ,  Wataru Saiki ,  Naoya Murakami ,  Masami Miyake

发明人： Kazuki Mizushima ,  Wataru Saiki ,  Naoya Murakami ,  Masami Miyake

IPC分类号： B01J19/00 ,  C01B33/08

CPC分类号： B01J19/243 ,  B01J2219/00135 ,  B01J2219/00155 ,  B01J2219/1928 ,  C01B33/1071

摘要： In an apparatus for producing trichlorosilane, an internal space of a reaction chamber is partitioned in a radial direction by first walls running along a circumferential direction, and is partitioned into multiple spaces by second walls which extend in a direction crossing the circumferential direction. Upper portions or lower portions of the first walls and the second walls are formed with a communicating portion which circulates a raw material gas to be introduced, toward a central portion of a reaction chamber while the raw material gas goes through the small spaces sequentially and is turned up and down, heaters are installed in the small spaces, one of small spaces on both sides of the second walls is used as a small space for a upward flow passage, and the other is used as a small space for a downward flow passage, and the small spaces communicate with each other via the communication portion of the second walls.

摘要翻译： 在三氯硅烷的制造装置中，反应室的内部空间沿着圆周方向的第一壁在径向上分隔开，并且沿与圆周方向交叉的方向延伸的第二壁分隔成多个空间。 第一壁和第二壁的上部或下部形成有将原料气体引入循环的连通部，朝向反应室的中心部分，同时原料气体依次通过小空间，并且是 上下放置，加热器安装在小空间中，第二壁两侧的小空间之一用作向上流动通道的小空间，另一个用作向下流动通道的小空间 并且小空间经由第二壁的连通部彼此连通。

公开(公告)号：US20110215083A1

公开(公告)日：2011-09-08

申请号：US12932816

申请日：2011-03-03

申请人： Masami Miyake ,  Wataru Saiki

发明人： Masami Miyake ,  Wataru Saiki

IPC分类号： F27D11/00

CPC分类号： B01J19/243 ,  B01J2219/00135 ,  B01J2219/00155 ,  C01B33/1071

摘要： An apparatus for producing trichlorosilane, comprising: a reaction chamber into which the raw gas is introduced to produce a reaction gas; a plurality of heaters disposed inside the reaction chamber to heat the raw gas; and a plurality of electrodes connected to basal portions of the heaters, wherein the heaters include first heaters each having an exothermic portion and second heaters each having an exothermic portion shorter than that of the first heater and a radiation plate connected to the exothermic portion, wherein a partial portion of the exothermic portion of the first heater faces the radiation plate of the second heaters; the reaction chamber has an introducing port of the raw gas on a side of the exothermic portion of the second heater; and the reaction chamber has discharge port of the reaction product gas on a side of the radiation plate of the second heater is arranged.

摘要翻译： 一种三氯硅烷的制造装置，其特征在于，包括：反应室，其中引入原料气体以产生反应气体; 设置在反应室内的多个加热器，用于加热原料气体; 以及连接到所述加热器的基部的多个电极，其中所述加热器包括各自具有放热部分的第一加热器和每个具有比所述第一加热器短的放热部分的第二加热器和连接到所述放热部分的辐射板，其中 第一加热器的放热部分的部分部分面向第二加热器的辐射板; 所述反应室在所述第二加热器的放热部分的一侧具有所述原料气体的导入口， 反应室具有反应产物气体在第二加热器的辐射板一侧的排出口。

公开(公告)号：US08809746B2

公开(公告)日：2014-08-19

申请号：US12932816

申请日：2011-03-03

申请人： Masami Miyake ,  Wataru Saiki

发明人： Masami Miyake ,  Wataru Saiki

IPC分类号： F27D11/00

CPC分类号： B01J19/243 ,  B01J2219/00135 ,  B01J2219/00155 ,  C01B33/1071

摘要： An apparatus for producing trichlorosilane, comprising: a reaction chamber into which the raw gas is introduced to produce a reaction gas; a plurality of heaters disposed inside the reaction chamber to heat the raw gas; and a plurality of electrodes connected to basal portions of the heaters, wherein the heaters include first heaters each having an exothermic portion and second heaters each having an exothermic portion shorter than that of the first heater and a radiation plate connected to the exothermic portion, wherein a partial portion of the exothermic portion of the first heater faces the radiation plate of the second heaters; the reaction chamber has an introducing port of the raw gas on a side of the exothermic portion of the second heater; and the reaction chamber has discharge port of the reaction product gas on a side of the radiation plate of the second heater is arranged.

摘要翻译： 一种三氯硅烷的制造装置，其特征在于，包括：反应室，其中引入原料气体以产生反应气体; 设置在反应室内的多个加热器，用于加热原料气体; 以及连接到所述加热器的基部的多个电极，其中所述加热器包括各自具有放热部分的第一加热器和每个具有比所述第一加热器短的放热部分的第二加热器和连接到所述放热部分的辐射板，其中 第一加热器的放热部分的部分部分面向第二加热器的辐射板; 所述反应室在所述第二加热器的放热部分的一侧具有所述原料气体的导入口， 反应室具有反应产物气体在第二加热器的辐射板一侧的排出口。

公开(公告)号：US20110223074A1

公开(公告)日：2011-09-15

申请号：US13047214

申请日：2011-03-14

申请人： Kazuki Mizushima ,  Wataru Saiki ,  Naoya Murakami ,  Masami Miyake

发明人： Kazuki Mizushima ,  Wataru Saiki ,  Naoya Murakami ,  Masami Miyake

IPC分类号： B01J19/00

CPC分类号： B01J19/243 ,  B01J2219/00135 ,  B01J2219/00155 ,  B01J2219/1928 ,  C01B33/1071

摘要： In an apparatus for producing trichlorosilane, an internal space of a reaction chamber is partitioned in a radial direction by first walls running along a circumferential direction, and is partitioned into multiple spaces by second walls which extend in a direction crossing the circumferential direction. Upper portions or lower portions of the first walls and the second walls are formed with a communicating portion which circulates a raw material gas to be introduced, toward a central portion of a reaction chamber while the raw material gas goes through the small spaces sequentially and is turned up and down, heaters are installed in the small spaces, one of small spaces on both sides of the second walls is used as a small space for a upward flow passage, and the other is used as a small space for a downward flow passage, and the small spaces communicate with each other via the communication portion of the second walls.

摘要翻译： 在三氯硅烷的制造装置中，反应室的内部空间沿着圆周方向的第一壁在径向上分隔开，并且沿与圆周方向交叉的方向延伸的第二壁分隔成多个空间。 第一壁和第二壁的上部或下部形成有将原料气体引入循环的连通部，朝向反应室的中心部分，同时原料气体依次通过小空间，并且是 上下放置，加热器安装在小空间中，第二壁两侧的小空间之一用作向上流动通道的小空间，另一个用作向下流动通道的小空间 并且小空间经由第二壁的连通部彼此连通。

公开(公告)号：US09468042B2

公开(公告)日：2016-10-11

申请号：US13064106

申请日：2011-03-07

申请人： Masami Miyake ,  Kazuki Mizushima ,  Wataru Saiki ,  Naoya Murakami

发明人： Masami Miyake ,  Kazuki Mizushima ,  Wataru Saiki ,  Naoya Murakami

IPC分类号： H05B3/02

CPC分类号： H05B3/02

摘要： An apparatus for producing trichlorosilane from raw gas containing silicon tetrachloride and hydrogen, having: a reaction chamber being supplied with the raw gas for generating reacted gas containing trichlorosilane and hydrogen; a plurality of heaters heating the raw gas and having exothermic portions being disposed along a vertical direction in the reaction chamber; a plurality of electrodes being connected to basal portions of the heaters; and a radiation plate being disposed between the exothermic portions of the heaters.

摘要翻译： 一种由含有四氯化硅和氢气的原料气体生产三氯硅烷的装置，具有：向反应室供给产生含三氯硅烷和氢气的反应气体的原料气体; 多个加热器，其加热原料气体，并且在反应室中沿垂直方向设置放热部分; 多个电极连接到加热器的基部; 并且辐射板设置在加热器的放热部分之间。

公开(公告)号：US20110215084A1

公开(公告)日：2011-09-08

申请号：US13064106

申请日：2011-03-07

申请人： Masami Miyake ,  Kazuki Mizushima ,  Wataru Saiki ,  Naoya Murakami

发明人： Masami Miyake ,  Kazuki Mizushima ,  Wataru Saiki ,  Naoya Murakami

IPC分类号： H05B3/02

CPC分类号： H05B3/02

摘要： An apparatus for producing trichlorosilane from raw gas containing silicon tetrachloride and hydrogen, having: a reaction chamber being supplied with the raw gas for generating reacted gas containing trichlorosilane and hydrogen; a plurality of heaters heating the raw gas and having exothermic portions being disposed along a vertical direction in the reaction chamber; a plurality of electrodes being connected to basal portions of the heaters; and a radiation plate being disposed between the exothermic portions of the heaters.

摘要翻译： 一种由含有四氯化硅和氢气的原料气体生产三氯硅烷的装置，具有：向反应室供给产生含三氯硅烷和氢气的反应气体的原料气体; 多个加热器，其加热原料气体，并且在反应室中沿垂直方向设置放热部分; 多个电极连接到加热器的基部; 并且辐射板设置在加热器的放热部分之间。

公开(公告)号：US09994455B2

公开(公告)日：2018-06-12

申请号：US12451666

申请日：2008-05-23

申请人： Wataru Saiki ,  Kazuki Mizushima ,  Makoto Urushihara

发明人： Wataru Saiki ,  Kazuki Mizushima ,  Makoto Urushihara

IPC分类号： C01B33/107 ,  C01B33/027

CPC分类号： C01B33/1071 ,  C01B33/027

摘要： A method of manufacturing trichlorosilane includes a conversion reaction process (first reaction process) for producing a first reaction product gas, which contains trichlorosilane, dichlorosilylene, hydrogen chloride, and high-order silane compounds, by performing a conversion reaction of silicon tetrachloride and hydrogen, which are raw materials, in a first temperature range that is equal to or higher than 1000° C. and equal to or lower than 1900° C.; a first cooling process for cooling the first reaction product gas to a temperature of 950° C. or lower within 1 sec (except that the first reaction product gas is cooled to a temperature lower than 600° C. within 0.01 sec); a second reaction process for maintaining the temperature of the first reaction product gas in a second temperature range, which is equal to or higher than 600° C. and equal to or lower than 950° C., during the time that is equal to or more than 0.01 sec and equal to or less than 5 sec; and a second cooling process for cooling a second reaction product gas, which has been subjected to the second reaction process, to a temperature lower than 600° C.

公开(公告)号：US09315895B2

公开(公告)日：2016-04-19

申请号：US13067015

申请日：2011-05-03

申请人： Takashi Miyazawa ,  Wataru Saiki

发明人： Takashi Miyazawa ,  Wataru Saiki

IPC分类号： C23C16/24 ,  C23C16/44 ,  C01B33/035

CPC分类号： C23C16/24 ,  B01J2219/00085 ,  B01J2219/00094 ,  C01B33/035 ,  C23C16/4411

摘要： An apparatus for producing polycrystalline silicon having: a bell jar having a circumferential wall forming a chamber of a reactor and a jacket covering a circumferential wall, and in which a cooling path formed between the circumferential wall and the jacket that allows cooling medium including water to flow therethrough; a coolant feeding system which is connected to the bell jar so as to feed the cooling medium to the cooling path; a coolant recovering system which is connected to the bell jar so as to recover the cooling medium from the cooling path; a pressure control part controlling a pressure in the cooling path; and a flow-rate control part controlling a flow rate of the cooling medium, wherein the cooling medium flows in the cooling path as boiling two-phase flow by controlling the pressure and flow rate of the cooling medium.

摘要翻译： 一种多晶硅制造装置，具有：具有形成反应器室的圆周壁的钟形罩和覆盖周壁的套，其中形成在周壁与外套之间的冷却路径允许包括水的冷却介质 流过 冷却剂供给系统，其连接到钟罩，以将冷却介质供给到冷却路径; 冷却剂回收系统，其连接到钟罩，以便从冷却路径回收冷却介质; 压力控制部，控制冷却路径内的压力; 以及流量控制部，其控制所述冷却介质的流量，其中，所述冷却介质通过控制所述冷却介质的压力和流量而以作为沸腾的两相流的冷却路径流动。

公开(公告)号：US08168152B2

公开(公告)日：2012-05-01

申请号：US13095997

申请日：2011-04-28

申请人： Wataru Saiki ,  Kazuki Mizushima

发明人： Wataru Saiki ,  Kazuki Mizushima

IPC分类号： C01B33/107

CPC分类号： C01B33/107 ,  C01B33/03 ,  C01B33/1071 ,  C01B33/10778

摘要： The present invention relates to a method for producing trichlorosilane. In this method for producing trichlorosilane, first, silicon tetrachloride and hydrogen are subjected to a conversion reaction at a temperature of equal to or higher than 1000° C. and equal to or lower than 1900° C., to produce a reaction gas containing trichlorosilane, dichlorosilylene, hydrogen chloride and high-order silane compounds, and then the reaction gas discharged from the conversion furnace is cooled to 600° C. or higher within 0.01 seconds from the initiation of cooling and to 500° C. or lower within 2 seconds. Subsequently, the reaction gas is maintained in a temperature range of equal to or higher than 500° C. and equal to or lower than 950° C. for a time period of equal to or longer than 0.01 seconds and equal to or shorter than 5 seconds. The reaction gas is further cooled to below 500° C.

摘要翻译： 本发明涉及三氯硅烷的制造方法。 在这种三氯硅烷的制造方法中，首先，在等于或高于1000℃等于或低于1900℃的温度下对四氯化硅和氢进行转化反应，以产生含有三氯硅烷的反应气体 ，二氯二甲苯，氯化氢和高级硅烷化合物，然后从转化炉排出的反应气体在冷却开始后0.01秒内冷却至600℃以上，并在2秒内降至500℃以下 。 随后，将反应气体保持在等于或高于500℃且等于或低于950℃的温度范围等于或大于0.01秒且等于或小于5的时间 秒。 将反应气体进一步冷却至低于500℃

公开(公告)号：US20110200512A1

公开(公告)日：2011-08-18

申请号：US13095997

申请日：2011-04-28

申请人： Wataru Saiki ,  Kazuki Mizushima

发明人： Wataru Saiki ,  Kazuki Mizushima

IPC分类号： C01B33/107 ,  C01B33/021

CPC分类号： C01B33/107 ,  C01B33/03 ,  C01B33/1071 ,  C01B33/10778

摘要： The present invention relates to a method for producing trichlorosilane. In this method for producing trichlorosilane, first, silicon tetrachloride and hydrogen are subjected to a conversion reaction at a temperature of equal to or higher than 1000° C. and equal to or lower than 1900° C., to produce a reaction gas containing trichlorosilane, dichlorosilylene, hydrogen chloride and high-order silane compounds, and then the reaction gas discharged from the conversion furnace is cooled to 600° C. or higher within 0.01 seconds from the initiation of cooling and to 500° C. or lower within 2 seconds. Subsequently, the reaction gas is maintained in a temperature range of equal to or higher than 500° C. and equal to or lower than 950° C. for a time period of equal to or longer than 0.01 seconds and equal to or shorter than 5 seconds. The reaction gas is further cooled to below 500° C.

摘要翻译： 本发明涉及三氯硅烷的制造方法。 在这种三氯硅烷的制造方法中，首先，在等于或高于1000℃等于或低于1900℃的温度下对四氯化硅和氢气进行转化反应，生成含有三氯硅烷的反应气体 ，二氯二甲苯，氯化氢和高级硅烷化合物，然后从转化炉排出的反应气体在冷却开始后0.01秒内冷却至600℃以上，并在2秒内降至500℃以下 。 随后，将反应气体保持在等于或高于500℃且等于或低于950℃的温度范围等于或大于0.01秒且等于或小于5的时间 秒。 将反应气体进一步冷却至低于500℃