公开(公告)号：US5248532A

公开(公告)日：1993-09-28

申请号：US623338

申请日：1990-12-07

申请人： Masami Sawada ,  Takayasu Zushi ,  Mitsuo Yoshiyasu

发明人： Masami Sawada ,  Takayasu Zushi ,  Mitsuo Yoshiyasu

IPC分类号： B32B27/08 ,  B60R21/2165

CPC分类号： B60R21/21656 ,  B32B27/08 ,  Y10T428/1334 ,  Y10T428/1341 ,  Y10T428/15 ,  Y10T428/24983 ,  Y10T428/31913 ,  Y10T428/31917 ,  Y10T428/31924

摘要： An air bag-containing cover comprising:a soft surface skin layer made of a thermoplastic polymer containing the following ingredients A, B, C and D:ingredient A: a hydrogenated derivative of a block copolymer comprising styrene an conjugated diene,ingredient B: an olefinic resin,ingredient C: polyisobutylene with a viscosity average molecular weight of not greater than 70,000, andingredient D: a hydrocarbon series rubber softening agent with a kinetic viscosity at 40.degree. C. of not greater than 500 cSt and/or polybutene with a number average molecular weight of not greater than 2500, in which blending ratio is:ingredient A=40 to 80% by weight,ingredient B=5 to 30% by weightingredient C=2 to 30% by weightingredient D=0 to 20% by weight, and having a JIS-A hardness according to JIS-K6301 of from 20 to 90, anda rigid core layer comprising an olefinic resin having a modulus in flexure according to JIS-K7203 of from 1000 to 7000 kg/cm.sup.2, in whichthe core layer has a higher hardness than that of the surface skin layer, and the core layer has a portion for easily bursting the cover upon initiation of the air bag operation.

摘要翻译： 一种含气囊的盖，包括：由含有以下成分A，B，C和D的热塑性聚合物制成的软表皮层：成分A：包含苯乙烯和共轭二烯的嵌段共聚物的氢化衍生物，成分B： 烯烃树脂，成分C：粘均分子量不大于70,000的聚异丁烯，成分D：在40℃下的动力粘度不大于500cSt的烃系橡胶软化剂和/或具有 数均分子量不大于2500，其中混合比为：成分A = 40至80重量％，成分B = 5至30重量％成分C = 2至30重量％成分D = 0至20 重量％，根据JIS-K6301的JIS-A硬度为20〜90，并且包含根据JIS-K7203的挠曲模量为1000〜7000kg / cm 2的烯烃树脂的刚性芯层， 其中芯层具有较高的硬度 并且芯层具有在气囊操作开始时容易使盖破裂的部分。

公开(公告)号：US5118133A

公开(公告)日：1992-06-02

申请号：US561618

申请日：1990-08-01

申请人： Takayasu Zushi ,  Masami Sawada ,  Yuichi Nanbu ,  Yasuo Ito

发明人： Takayasu Zushi ,  Masami Sawada ,  Yuichi Nanbu ,  Yasuo Ito

IPC分类号： B60R21/16 ,  B60R21/20 ,  B60R21/203 ,  B60R21/217

CPC分类号： B60R21/217

摘要： A retainer used for an air bag is formed of synthetic resin-impregnated paper. The retainer is reduced in weight, has a shape adaptibility and can be served at a reduced cost. Further, the attaching operation is easy to improve productivity.

摘要翻译： 用于气囊的保持架由合成树脂浸渍纸形成。 保持器重量减轻，具有形状适应性并且可以以降低的成本进行服务。 此外，附接操作容易提高生产率。

公开(公告)号：US5060972A

公开(公告)日：1991-10-29

申请号：US564857

申请日：1990-08-09

申请人： Takeshi Satoh ,  Yoshikazu Nakayama ,  Masami Sawada ,  Takayasu Zushi ,  Yuichi Nanbu

发明人： Takeshi Satoh ,  Yoshikazu Nakayama ,  Masami Sawada ,  Takayasu Zushi ,  Yuichi Nanbu

IPC分类号： B60R21/16 ,  B60R21/20 ,  B60R21/215

CPC分类号： B60R21/215

摘要： An automotive air bag system has an air bag and inflators for inflating the bag. The bag and the inflators are held in a holder. A modular cover surrounding the bag engages the holder via clearance such that the cover is held by the holder so as to be movable for a given distance toward and/or away from the passenger.

摘要翻译： 汽车气囊系统具有气囊和用于使袋膨胀的充气器。 袋子和充气器被保持在支架上。 围绕袋子的模块化盖子通过间隙与保持器接合，使得盖子被保持器保持，以便能够朝向和/或远离乘客一定距离移动。

公开(公告)号：US5195773A

公开(公告)日：1993-03-23

申请号：US684849

申请日：1991-04-15

申请人： Masami Sawada ,  Yuichi Nanbu ,  Takayasu Zushi

发明人： Masami Sawada ,  Yuichi Nanbu ,  Takayasu Zushi

IPC分类号： B60R21/20 ,  B60R21/2165

CPC分类号： B60R21/21656

摘要： A cover for accommodating an air bag, which is provided at its inner surface with an array of spaced holes for starting tear at a start of an operation of the air bag, is characterized in that ends of the holes in the direction of the array have acute shapes converging toward the adjacent holes, respectively.

摘要翻译： 一种用于容纳气囊的盖，其特征在于，在其内表面具有用于在气囊的操作开始时开始撕裂的间隔开的孔的阵列，其特征在于，在阵列的方向上的孔的端部具有 尖锐的形状分别朝相邻的孔收敛。

公开(公告)号：USRE36898E

公开(公告)日：2000-10-03

申请号：US896989

申请日：1997-07-18

申请人： Masami Sawada ,  Yuichi Nanbu ,  Mitsuo Yoshiyasu

发明人： Masami Sawada ,  Yuichi Nanbu ,  Mitsuo Yoshiyasu

IPC分类号： B32B27/08 ,  B60R21/2165 ,  B60R21/16

CPC分类号： B32B27/08 ,  B60R21/21656 ,  Y10T428/15 ,  Y10T428/24983

摘要： A cover for a vehicle air bag comprises an external surface layer injection-molded from a thermoplastic material having a JIS-A hardness of 20 to 90 and a core layer injection-molded from a thermoplastic material having a bending elastic modulus (JIS K 7203) of not less than about 1000 kg/cm.sup.2 and a hardness greater than that of the surface layer. The core has weakened zones along which the cover breaks when the air bag is inflated.

摘要翻译： 用于车用气囊的盖包括由JIS-A硬度为20〜90的热塑性材料注射成型的外表面层和由具有弯曲弹性模量（JIS K 7203）的热塑性材料注射成型的芯层， 不小于约1000kg / cm2，硬度大于表面层的硬度。 当气囊膨胀时，芯部具有弱化的区域，盖子在该区域被破坏。

公开(公告)号：US5110647A

公开(公告)日：1992-05-05

申请号：US453685

申请日：1989-12-20

申请人： Masami Sawada ,  Yuichi Nanbu ,  Mitsuo Yoshiyasu

发明人： Masami Sawada ,  Yuichi Nanbu ,  Mitsuo Yoshiyasu

IPC分类号： B32B27/08 ,  B60R21/2165

CPC分类号： B32B27/08 ,  B60R21/21656 ,  Y10T428/15 ,  Y10T428/24983

摘要： A cover for a vehicle air bag comprises an external surface layer injection-molded from a thermoplastic material having a JIS-A hardness of 20 to 90 and a core layer injection-molded from a thermoplastic material having a bending elastic modulus (JIS K 7203) of not less than about 1000 kg/cm.sup.2 and a hardness greater than that of the surface layer. The core has weakened zones along which the cover breaks when the air bag is inflated.

摘要翻译： 用于车用气囊的盖包括由JIS-A硬度为20〜90的热塑性材料注射成型的外表面层和由具有弯曲弹性模量（JIS K 7203）的热塑性材料注射成型的芯层， 不小于约1000kg / cm2，硬度大于表面层的硬度。 当气囊膨胀时，芯部具有弱化的区域，盖子在该区域被破坏。

公开(公告)号：US20060197251A1

公开(公告)日：2006-09-07

申请号：US11347276

申请日：2006-02-06

申请人： Masami Sawada

发明人： Masami Sawada

IPC分类号： B28B7/14

CPC分类号： B29C33/42 ,  B29C37/0057 ,  B29C45/0046 ,  B29C45/0055 ,  B29C45/0081 ,  B29C45/5675 ,  B29C48/07 ,  B29C69/001 ,  B29C2045/0058 ,  B29C2793/00 ,  B29L2031/3008 ,  B29L2031/3014 ,  B29L2031/3038 ,  B60R21/2165

摘要： An airbag cover mold includes a core member and a cavity member, and a resin material is supplied to a cavity between the core member and the cavity member. The core member has a plate-shaped blade block that functions as a protruding piece for forming a tear line. The blade block has openings for allowing the resin material to flow from one side of the blade block to the other side. An edged portion is provided at the top edge of each opening so as to point downward. Injection of the resin material is started after the blade block is moved to the cavity. After the injection, the blade block is moved outward to form the tear line. The mold provides an airbag cover in which smoothness in a region around a tear line is ensured.

摘要翻译： 气囊盖模具包括芯构件和空腔构件，并且将树脂材料供应到芯构件和空腔构件之间的空腔。 芯构件具有用作形成撕裂线的突出片的板状刀片。 叶片块具有允许树脂材料从叶片块的一侧流到另一侧的开口。 在每个开口的顶部边缘处设置边缘部分，以便向下指向。 在叶片块移动到空腔之后开始注入树脂材料。 在注射之后，刀片块向外移动以形成撕裂线。 模具提供安全气囊盖，其中确保了撕裂线周围区域的平滑度。

公开(公告)号：US5500547A

公开(公告)日：1996-03-19

申请号：US364240

申请日：1994-12-27

申请人： Kazumi Yamaguchi ,  Masami Sawada ,  Manabu Yamada ,  Keizo Hagimoto

发明人： Kazumi Yamaguchi ,  Masami Sawada ,  Manabu Yamada ,  Keizo Hagimoto

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L27/02 ,  H01L29/78 ,  H01L31/058

CPC分类号： H01L29/7804 ,  H01L27/0248 ,  H01L29/7805 ,  H01L2924/0002 ,  Y10T307/773

摘要： A two-way conductive directional circuit formed in a polycrystalline silicon layer separated by an insulation film from a semiconductive element is one-way biased for sensing a temperature of the semiconductive element. The directional circuit may be provided with a bias in either conductive direction thereof for sensing a temperature of the semiconductive element, before being provided with a bias in the other conductive direction thereof for sensing the temperature of the semiconductive element.

摘要翻译： 形成在由绝缘膜与半导体元件隔开的多晶硅层中的双向导电定向电路是单向偏置的，用于感测半导体元件的温度。 定向电路可以在其导电方向上具有用于感测半导体元件的温度的偏压，然后在其另一个导电方向上设置偏压以感测半导体元件的温度。

公开(公告)号：US06133099A

公开(公告)日：2000-10-17

申请号：US18441

申请日：1997-02-04

申请人： Masami Sawada

发明人： Masami Sawada

IPC分类号： H01L21/316 ,  H01L21/336 ,  H01L29/78

CPC分类号： H01L21/316 ,  H01L29/78

摘要： A vertical MOSFET of the present invention comprises a semiconductor wafer having a groove selectively etching in the semiconductor wafer to have substantially vertical side walls. The groove is oxidized using local oxidation of silicon (LOCOS) at 1100.degree. C. or greater to form a LOCOS film on the semiconductor wafer in the groove so that a whole side surface of said semiconductor wafer exposed by the groove is substantially vertical and essentially flat. The LOCOS film in the groove is removed and a thermal insulating film on the semiconductor wafer in the groove. Then a gate electrode made of a conductive film is formed on the thermal insulating film. An interlayer insulating film is formed on the gate electrode and a source electrode is formed in ohmic contact with a source region and a base region. A drain electrode is connected to the opposite side of the semiconductor wafer. As a result, the vertical MOSFET of the present invention has improved on-state resistance, reduced parasitic capacitance and higher breakdown voltage.

摘要翻译： 本发明的垂直MOSFET包括半导体晶片，其具有在半导体晶片中选择性蚀刻的槽，以具有基本垂直的侧壁。 使用硅（LOCOS）的局部氧化在1100℃或更高的温度下使凹槽氧化，以在凹槽中的半导体晶片上形成LOCOS膜，使得由凹槽暴露的所述半导体晶片的整个侧表面基本上是垂直的并且基本上 平面。 去除凹槽中的LOCOS膜，并在沟槽中的半导体晶片上除去绝热膜。 然后在绝热膜上形成由导电膜制成的栅电极。 在栅电极上形成层间绝缘膜，源极与源极区域和基极区域欧姆接触形成。 漏电极连接到半导体晶片的相对侧。 结果，本发明的垂直MOSFET具有改善的导通电阻，降低的寄生电容和较高的击穿电压。

公开(公告)号：US5529940A

公开(公告)日：1996-06-25

申请号：US318082

申请日：1994-10-05

申请人： Masanori Yamamoto ,  Masami Sawada

发明人： Masanori Yamamoto ,  Masami Sawada

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L29/49 ,  H01L21/265

CPC分类号： H01L29/4916 ,  H01L29/66712 ,  H01L29/7802

摘要： A method of manufacturing a MOSFET having a p-type gate electrode made of polycrystalline silicon formed through a gate insulating film on a surface of a conductive semiconductor substrate. The gate electrode contains an n-type impurity in addition to a boron impurity. Low threshold voltage can be obtained with less fluctuation. Preferably, the n-type impurity is phosphorus and/or arsenic, and the concentration thereof ranges from 5.times.10.sup.18 to 1.times.10.sup.20 cm.sup.-3. A channel, which is formed in the surface of the gate insulating film side of the substrate, preferably has a positive polarity.

摘要翻译： 一种在导电半导体衬底的表面上通过栅极绝缘膜形成具有由多晶硅制成的p型栅电极的MOSFET的方法。 除了硼杂质之外，栅电极还含有n型杂质。 可以以较小的波动获得低阈值电压。 优选地，n型杂质是磷和/或砷，其浓度范围为5×1018至1×1020cm-3。 在基板的栅极绝缘膜侧的表面形成的沟道优选具有正极性。