Process of making high T.sub.c Josephson junction device
    1.
    发明授权
    Process of making high T.sub.c Josephson junction device 失效
    制造高Tc约瑟夫逊结装置的工艺

    公开(公告)号:US5880069A

    公开(公告)日:1999-03-09

    申请号:US190211

    申请日:1994-02-01

    IPC分类号: C23C14/08 C30B23/02 H01L39/24

    摘要: A desired pattern is formed on a non-superconducting oxide film after the non-superconducting oxide film has been formed on a magnesia substrate. A superconducting oxide film is formed over the exposed parts of the substrate and the non-superconducting oxide film. The epitaxial orientation of the superconducting oxide film section on the non-superconducting oxide film is different from that of the superconducting oxide film section on the substrate. A tilt-boundary junction is produced at a boundary between the superconducting film sections which are different in epitaxial orientation from each other. Thus, a Josephson junction having a desired pattern can be obtained.

    摘要翻译: 在非超导氧化膜已经形成在氧化镁基板上之后,在非超导氧化物膜上形成期望的图案。 在衬底和非超导氧化物膜的暴露部分上形成超导氧化物膜。 非超导氧化物膜上的超导氧化膜部分的外延取向与衬底上的超导氧化膜部分的外延取向不同。 在外延取向不同的超导膜部之间的边界处产生倾斜边界连接。 因此,可以获得具有期望图案的约瑟夫逊结。

    Superconducting device and method of producing superconducting thin film
    2.
    发明授权
    Superconducting device and method of producing superconducting thin film 失效
    超导体及超导薄膜的制造方法

    公开(公告)号:US5128315A

    公开(公告)日:1992-07-07

    申请号:US303933

    申请日:1989-01-30

    IPC分类号: H01L39/24

    摘要: The superconducting device according to the present invention is provided with a superconducting thin film of the Bi-Sr-Ca-Cu oxide deposited on a substrate thereof. Consequently, the device can be produced at a low cost because no rare earth elements are required.The superconducting thin film according to the present invention is formed by sputtering onto a substrate from a Bi-Sr-Ca-Cu oxide target, followed by annealing in an oxidizing atmosphere. In this way, it is possible to produce a superconducting thin film of the Bi-Sr-Ca-Cu oxide in a simple way by using an ordinary sputtering apparatus. In this method, it is preferable that a MgO substrate be used and the optimum annealing temperature is about 880.degree. C.

    摘要翻译: 根据本发明的超导装置设置有沉积在其基板上的Bi-Sr-Ca-Cu氧化物的超导薄膜。 因此,由于不需要稀土元素,因此能够以低成本生产该装置。 根据本发明的超导薄膜通过从Bi-Sr-Ca-Cu氧化物靶溅射到衬底上,然后在氧化气氛中退火而形成。 以这种方式,可以通过使用普通的溅射装置以简单的方式制造Bi-Sr-Ca-Cu氧化物的超导薄膜。 在该方法中,优选使用MgO基板,最佳退火温度为约880℃。