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    ZOOM LENS SYSTEM
    1.
    发明申请
    ZOOM LENS SYSTEM 有权
    变焦镜头系统

    公开(公告)号：US20120212834A1

    公开(公告)日：2012-08-23

    申请号：US13399656

    申请日：2012-02-17

    申请人： Masashi Yoshida

    发明人： Masashi Yoshida

    IPC分类号： G02B15/14

    CPC分类号： G02B15/173 ,  G02B15/14

    摘要： A zoom lens system has a combined focal length fw at the wide angle end and includes, in order from an object side, a first lens group with positive refractive power and combined focal length f1; a second lens group with negative refractive power; a third lens group with positive refractive power; a fourth lens group with positive refractive power; and a fifth lens group with positive refractive power and including, in order from the object side, a negative biconcave lens with focal length f51 and a positive biconvex lens with focal length f52, the negative biconcave lens and the positive biconvex lens disposed with an air space shorter than a center thickness of the negative biconcave lens in between and both surfaces of the positive biconvex lens being aspherical. The system satisfies the following conditions: 13.5

    摘要翻译： 变焦透镜系统在广角端具有组合焦距fw，从物体侧依次包括具有正折光力的第一透镜组和组合焦距f1; 具有负屈光力的第二透镜组; 具有正屈光力的第三透镜组; 具有正屈光力的第四透镜组; 以及具有正屈光力的第五透镜组，并且从物体侧依次包括具有焦距f51的负双凸透镜和焦距为f52的正双凸透镜，负双凸透镜和正双凸透镜配置有空气 空心短于正双凸透镜之间的负双凸透镜的中心厚度，其正面为非球面。 该系统满足以下条件：13.5

    DNA coding for polypeptide participating in biosynthesis of pladienolide
    2.
    发明授权
    DNA coding for polypeptide participating in biosynthesis of pladienolide 有权
    编码参与pladienolide生物合成的多肽的DNA

    公开(公告)号：US08008049B2

    公开(公告)日：2011-08-30

    申请号：US11630689

    申请日：2005-07-19

    申请人： Kazuhiro Machida ,  Akira Arisawa ,  Susumu Takeda ,  Masashi Yoshida ,  Toshio Tsuchida

    发明人： Kazuhiro Machida ,  Akira Arisawa ,  Susumu Takeda ,  Masashi Yoshida ,  Toshio Tsuchida

    IPC分类号： C12P17/16 ,  C07H21/04 ,  C07K2/00 ,  C12N9/00 ,  C12N15/63 ,  C12N1/00

    CPC分类号： C12P17/08 ,  C07K14/36 ,  C12N9/0071 ,  C12N9/0073 ,  C12N15/52 ,  C12P17/162

    摘要： The present invention provides polypeptides that participate in the biosynthesis of the pladienolide macrolide compounds, DNA that encodes these polypeptides and variants of this DNA, transformants that maintain all or a portion of this DNA or variant thereof, and a method of producing the pladienolide macrolide compounds using these transformants. More particularly, it provides an isolated pure DNA that contains at least one region encoding a polypeptide that participates in pladienolide biosynthesis; polypeptide encoded by this DNA; a self-replicating or integrated-replicating recombinant plasmid carrying this DNA; a transformant maintaining this DNA; and a method of producing a pladienolide, characterized by culturing this transformant on culture medium and collecting pladienolide from this culture medium.

    摘要翻译： 本发明提供了参与扁平二烯内酰脲大环内酯化合物的生物合成的多肽，编码这些多肽的DNA和该DNA的变体，保持该DNA或其变体的全部或一部分的转化体，以及生产该扁桃苷内酰胺大环内酯化合物的方法 使用这些转化体。 更具体地，其提供了分离的纯DNA，其含有至少一个编码参与泛二烯内酯生物合成的多肽的区域; 由该DNA编码的多肽; 携带该DNA的自我复制或整合复制重组质粒; 维持该DNA的转化体 以及生产普拉二烯内酯的方法，其特征在于在培养基上培养该转化体并从该培养基中收集普拉二烯内酯。

    Method of etching the back side of a wafer
    3.
    发明申请
    Method of etching the back side of a wafer 审中-公开
    刻蚀晶片背面的方法

    公开(公告)号：US20100323524A1

    公开(公告)日：2010-12-23

    申请号：US12801594

    申请日：2010-06-16

    申请人： Masashi Yoshida

    发明人： Masashi Yoshida

    IPC分类号： H01L21/3065

    CPC分类号： B81C1/00801 ,  B81C2201/0132 ,  B81C2201/053

    摘要： To etch the back side of a wafer, the front side of the wafer is first coated with a positive photoresist to form a protective film. The surface of the protective film is hardened by heating, or by heating and ultraviolet curing. The wafer is then placed in a plasma etching apparatus with the hardened surface of the protective film in contact with an electrode of the etching apparatus, and the back side of the wafer is patterned by plasma etching. When the etching is completed, the front side of the wafer is separated from the electrode and the wafer is removed from the plasma etching apparatus. The hardened positive photoresist prevents the wafer from sticking to the electrode.

    摘要翻译： 为了蚀刻晶片的背面，首先用正性光致抗蚀剂涂覆晶片的正面以形成保护膜。 保护膜的表面通过加热或加热和紫外线固化而硬化。 然后将晶片放置在等离子体蚀刻装置中，其中保护膜的硬化表面与蚀刻装置的电极接触，并且通过等离子体蚀刻对晶片的背面进行图案化。 当蚀刻完成时，晶片的前侧与电极分离，晶片从等离子体蚀刻装置中除去。 硬化的正性光致抗蚀剂防止晶片粘到电极上。

    Semiconductor device fabrication method
    5.
    发明授权
    Semiconductor device fabrication method 失效
    半导体器件制造方法

    公开(公告)号：US07687296B2

    公开(公告)日：2010-03-30

    申请号：US11513130

    申请日：2006-08-31

    申请人： Masashi Yoshida

    发明人： Masashi Yoshida

    IPC分类号： H01L21/00

    CPC分类号： G03F7/168

    摘要： Circuit elements, such as aluminum interconnects, and a protective film for protecting these circuit elements are formed on a surface of a semiconductor substrate. Resist is formed covering the protective film. The semiconductor substrate on which the resist covering the protective film is formed is dipped into pure water so as to allow the water to filter into a gap between the resist and semiconductor substrate. Then the semiconductor substrate having the resist thereon is dried in high temperature air, and the resist is adhered to the semiconductor substrate by a sticking function due to the surface tension generated when the water is decreasing. The semiconductor substrate to which the resist is adhered is cleaned by a hydrogen fluoride aqueous solution.

    摘要翻译： 诸如铝互连的电路元件和用于保护这些电路元件的保护膜形成在半导体衬底的表面上。 形成覆盖保护膜的抗蚀剂。 将形成有保护膜的抗蚀剂的半导体基板浸入纯水中，以使水过滤到抗蚀剂和半导体衬底之间的间隙。 然后将其上具有抗蚀剂的半导体衬底在高温空气中干燥，并且由于当水下降时产生的表面张力，抗蚀剂通过粘附功能粘附到半导体衬底。 用氟化氢水溶液清洗附着有抗蚀剂的半导体衬底。

    MACROLIDE COMPOUND IN SOLID FORM, PROCESS FOR PREPARATION THEREOF, AND PHARMACEUTICAL COMPOSITION CONTAINING THE SAME
    7.
    发明申请
    MACROLIDE COMPOUND IN SOLID FORM, PROCESS FOR PREPARATION THEREOF, AND PHARMACEUTICAL COMPOSITION CONTAINING THE SAME 失效
    固体形式的MACROLIDE化合物，其制备方法和含有该化合物的药物组合物

    公开(公告)号：US20080214564A1

    公开(公告)日：2008-09-04

    申请号：US12021184

    申请日：2008-01-28

    申请人： Hiroshi ISHIHARA ,  Manabu Sasho ,  Keizo Sato ,  Takashi Kamahara ,  Masashi Yoshida

    发明人： Hiroshi ISHIHARA ,  Manabu Sasho ,  Keizo Sato ,  Takashi Kamahara ,  Masashi Yoshida

    IPC分类号： A61K31/497 ,  C07D405/12

    CPC分类号： C07D407/06

    摘要： The present invention provides the compound of formula (I) in a solid form which, as a bulk medicament for pharmaceutical manufacture, is uniform, has a high purity, and is easy to work with. The invention further provides a process for preparing this compound, and pharmaceutical compositions containing the same. A solid form of (8E,12E,14E)-7-{(4-cycloheptylpiperazin-1-yl)carbonyl}oxy-3,6,16,21-tetrahydroxy-6,10,12,16,20-pentamethyl-18,19-epoxytricosa-8,12,14-trien-11-olide which has uniform specifications and is easy to work with was developed.

    摘要翻译： 本发明提供了固体形式的式（I）化合物，其作为药物制造的大量药物是均匀的，具有高纯度，并且易于加工。 本发明还提供了制备该化合物的方法和含有该化合物的药物组合物。 （8E，12E，14E）-7 - {（4-环庚基哌嗪-1-基）羰基}氧-3,6,16,21-四羟基-6,10,12,16,20-五甲基 - 开发了具有统一规格并且易于使用的18,19-环氧树脂-8,12,14-三烯-11-硼化物。

    Semiconductor device fabrication method
    8.
    发明申请
    Semiconductor device fabrication method 失效
    半导体器件制造方法

    公开(公告)号：US20070072134A1

    公开(公告)日：2007-03-29

    申请号：US11513130

    申请日：2006-08-31

    申请人： Masashi Yoshida

    发明人： Masashi Yoshida

    IPC分类号： G03F7/16

    CPC分类号： G03F7/168

    摘要： Circuit elements, such as aluminum interconnects, and a protective film for protecting these circuit elements are formed on a surface of a semiconductor substrate. Resist is formed covering the protective film. The semiconductor substrate on which the resist covering the protective film is formed is dipped into pure water so as to allow the water to filter into a gap between the resist and semiconductor substrate. Then the semiconductor substrate having the resist thereon is dried in high temperature air, and the resist is adhered to the semiconductor substrate by a sticking function due to the surface tension generated when the water is decreasing. The semiconductor substrate to which the resist is adhered is cleaned by a hydrogen fluoride aqueous solution.

    摘要翻译： 诸如铝互连的电路元件和用于保护这些电路元件的保护膜形成在半导体衬底的表面上。 形成覆盖保护膜的抗蚀剂。 将形成有保护膜的抗蚀剂的半导体基板浸入纯水中，以使水过滤到抗蚀剂和半导体衬底之间的间隙。 然后将其上具有抗蚀剂的半导体衬底在高温空气中干燥，并且由于当水下降时产生的表面张力，抗蚀剂通过粘附功能粘附到半导体衬底。 用氟化氢水溶液清洗附着有抗蚀剂的半导体衬底。

    Novel physiologically active substance
    9.
    发明申请
    Novel physiologically active substance 失效
    新型生理活性物质

    公开(公告)号：US20060235002A1

    公开(公告)日：2006-10-19

    申请号：US10522733

    申请日：2003-07-31

    申请人： Mitsuo Nagai ,  Masashi Yoshida ,  Toshio Tsuchida

    发明人： Mitsuo Nagai ,  Masashi Yoshida ,  Toshio Tsuchida

    IPC分类号： C07D405/14 ,  A61K31/551 ,  A61K31/55 ,  A61K31/496 ,  A61K31/452 ,  A61K31/407 ,  A61K31/4025

    CPC分类号： C07D407/06

    摘要： A compound represented by the following general formula (I): (I) wherein R7 and R21 are the same or different and each represents optionally substituted C2-22 alkoxy, etc.; a pharmaceutically acceptable salt thereof or hydrates of the same. The compound (1) inhibits angiogenesis and inhibits the production of VEGF particularly under hypoxic conditions, which makes it useful as a remedy for solid cancer.

    摘要翻译： 由以下通式（I）表示的化合物：其中R 7和R 21相同或不同，并且各自表示任选取代的C 2 -22烷氧基等; 其药学上可接受的盐或其水合物。 化合物（1）抑制血管发生并抑制VEGF的产生，特别是在缺氧条件下，其可用作固体癌的治疗剂。