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公开(公告)号：US08691613B2
公开(公告)日：2014-04-08
申请号：US13877148
申请日：2011-08-31
IPC分类号： H01L21/00
CPC分类号： H01L31/18 , H01L31/0684 , H01L31/0747 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A crystalline-based silicon photoelectric conversion device comprises: an intrinsic silicon-based layer and a silicon-based layer of a first conductivity type, on one surface of a single-crystal silicon substrate of the first conductivity type; and an intrinsic silicon-based and a silicon-based layer of an opposite conductivity type, in this order on the other surface of the silicon substrate. At least one of forming the intrinsic silicon-based layer of the first conductivity type layer-side forming the intrinsic silicon-based layer of the opposite conductivity type layer-side includes: forming a first intrinsic silicon-based thin-film layer having a thickness of 1-10 nm on the silicon substrate; plasma-treating the silicon substrate in a gas containing mainly hydrogen; and forming a second intrinsic silicon-based thin-film layer on the first intrinsic silicon-based thin-film.
摘要翻译： 晶体硅光电转换装置包括：在第一导电类型的单晶硅衬底的一个表面上的本征硅基层和第一导电类型的硅基层; 以及相反导电类型的本征硅基和硅基层，依次在硅衬底的另一表面上。 形成形成相反导电型层侧的本征硅基层的第一导电型层侧的本征硅基层中的至少一个包括：形成具有厚度的第一本征硅基薄膜层 在硅衬底上为1-10nm; 在主要包含氢气的气体中等离子体处理硅衬底; 以及在所述第一本征硅基薄膜上形成第二本征硅基薄膜层。
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公开(公告)号：US20130210185A1
公开(公告)日：2013-08-15
申请号：US13877148
申请日：2011-08-31
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , H01L31/0684 , H01L31/0747 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A crystalline-based silicon photoelectric conversion device comprises: an intrinsic silicon-based layer and a silicon-based layer of a first conductivity type, on one surface of a single-crystal silicon substrate of the first conductivity type; and an intrinsic silicon-based and a silicon-based layer of an opposite conductivity type, in this order on the other surface of the silicon substrate. At least one of forming the intrinsic silicon-based layer of the first conductivity type layer-side forming the intrinsic silicon-based layer of the opposite conductivity type layer-side includes: forming a first intrinsic silicon-based thin-film layer having a thickness of 1-10 nm on the silicon substrate; plasma-treating the silicon substrate in a gas containing mainly hydrogen; and forming a second intrinsic silicon-based thin-film layer on the first intrinsic silicon-based thin-film.
摘要翻译： 晶体硅光电转换装置包括：在第一导电类型的单晶硅衬底的一个表面上的本征硅基层和第一导电类型的硅基层; 以及相反导电类型的本征硅基和硅基层，依次在硅衬底的另一表面上。 形成形成相反导电型层侧的本征硅基层的第一导电型层侧的本征硅基层中的至少一个包括：形成具有厚度的第一本征硅基薄膜层 在硅衬底上为1-10nm; 在主要包含氢气的气体中等离子体处理硅衬底; 以及在所述第一本征硅基薄膜上形成第二本征硅基薄膜层。
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公开(公告)号：US09276163B2
公开(公告)日：2016-03-01
申请号：US13879367
申请日：2011-10-14
IPC分类号： H01L31/20 , H01L31/18 , H01L31/0747
CPC分类号： H01L31/208 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Disclosed is a method for manufacturing a crystalline silicon-based photoelectric conversion device having a first intrinsic silicon-based layer, a p-type silicon-based layer and a first transparent electroconductive layer, positioned in this order on one surface of a conductive single-crystal silicon substrate, and having a second intrinsic silicon-based layer, an n-type silicon-based layer and a second transparent electroconductive layer, positioned in this order on the other surface of the conductive single-crystal silicon substrate. In the present invention, a heat treatment is carried out after at least one of the transparent electroconductive layers is formed. This heat treatment is carried out at a temperature of less than 200° C. under a hydrogen-containing atmosphere.
摘要翻译： 公开了一种具有第一本征硅基层，p型硅基层和第一透明导电层的晶体硅基光电转换器件的制造方法， 晶体硅衬底，并且具有第二本征硅基层，n型硅基层和第二透明导电层，其依次位于导电单晶硅衬底的另一表面上。 在本发明中，在形成至少一个透明导电层之后进行热处理。 该热处理在含氢气氛下在小于200℃的温度下进行。
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公开(公告)号：US20130203210A1
公开(公告)日：2013-08-08
申请号：US13879367
申请日：2011-10-14
IPC分类号： H01L31/20
CPC分类号： H01L31/208 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Disclosed is a method for manufacturing a crystalline silicon-based photoelectric conversion device having a first intrinsic silicon-based layer, a p-type silicon-based layer and a first transparent electroconductive layer, positioned in this order on one surface of a conductive single-crystal silicon substrate, and having a second intrinsic silicon-based layer, an n-type silicon-based layer and a second transparent electroconductive layer, positioned in this order on the other surface of the conductive single-crystal silicon substrate. In the present invention, a heat treatment is carried out after at least one of the transparent electroconductive layers is formed. This heat treatment is carried out at a temperature of less than 200° C. under a hydrogen-containing atmosphere.
摘要翻译： 公开了一种具有第一本征硅基层，p型硅基层和第一透明导电层的晶体硅基光电转换器件的制造方法， 晶体硅衬底，并且具有第二本征硅基层，n型硅基层和第二透明导电层，其依次位于导电单晶硅衬底的另一表面上。 在本发明中，在形成至少一个透明导电层之后进行热处理。 该热处理在含氢气氛下在小于200℃的温度下进行。
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5.发明申请BRANCHED COMPOUNDS, ORGANIC THIN FILMS MADE BY USING THE SAME, AND ORGANIC FILM DEVICES 审中-公开分批化合物，使用该化合物的有机薄膜和有机薄膜器件公开(公告)号：US20110046341A1
公开(公告)日：2011-02-24
申请号：US12867238
申请日：2009-01-07
申请人： Yutaka Ie , Toshihiko Uto , Yoshio Aso , Masato Ueda
发明人： Yutaka Ie , Toshihiko Uto , Yoshio Aso , Masato Ueda
IPC分类号： C08G75/06
CPC分类号： C07D333/08 , B82Y10/00 , C07D333/12 , C07D333/16 , C07D409/14 , C07D471/04 , H01L51/0047 , H01L51/0053 , H01L51/0068 , H01L51/0095 , H01L51/0512 , H01L51/0558 , Y02E10/549
摘要： A branched compound including a core part, at least one side chain part bonded to the core part, and an end, wherein one repeating unit or two or more repeating units expressed by the following formula (1) repeat in the or each side chain part, with the proviso that in a repeating unit bonded to the core part, T is bonded to the core part, and in two or more contiguous repeating units, each L is bonded to the T, each L is formed of a plurality of conjugation-forming units linked together; each L includes at least one thienylene unit as the conjugation-forming unit; and at least two of the groups existing at the ends of Ls (the ends of the L in sides which are not bonded to T) are acceptor groups. (In the formula, each L represents a divalent organic group which may have a substituent and the T represents a trivalent organic group which may have a substituent.)
摘要翻译： 一种支链化合物，其包含核心部分，至少一个侧链部分与核心部分结合，以及末端，其中一个重复单元或两个或更多个由下式（1）表示的重复单元在该侧链或各侧链部分中重复 条件是在与核心部分接合的重复单元中，T结合到核心部分，并且在两个或更多个连续的重复单元中，每个L结合到T，每个L由多个共轭 - 形成单元连接在一起; 每个L包括至少一个噻吩基单元作为共轭形成单元; 并且存在于Ls的末端的两个组中的至少两个（L侧不与T结合的端部）是受体组。 （式中，L表示可以具有取代基的二价有机基团，T表示可具有取代基的三价有机基团。）
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