公开(公告)号：US07364616B2

公开(公告)日：2008-04-29

申请号：US10554371

申请日：2003-05-13

申请人： Masato Tsuchiya ,  Ikuo Mashimo ,  Koichi Saito

发明人： Masato Tsuchiya ,  Ikuo Mashimo ,  Koichi Saito

IPC分类号： H01L21/68

CPC分类号： B65H3/0816 ,  B65H3/48 ,  H01L21/67092 ,  H01L21/6838

摘要： It is an object of the present invention to provide a wafer release method capable of releasing a wafer safely, simply and certainly and improving a wafer releasing rate, a wafer release apparatus and a wafer release transfer machine using the wafer release apparatus. A wafer release method of the present invention comprises the steps of: pressing the uppermost wafer along an axis direction (L-L′) shifted by an angle in the range of from 15 to 75 degrees from a crystal habit line axis (A-A′) or (B-B′) of the uppermost wafer clockwise or counterclockwise; bending upwardly the peripheral portion of the uppermost wafer so as to cause a bending stress in the uppermost wafer in the axis direction (L-L′) shifted by the angle; blowing a fluid into a clearance between the lower surface of the uppermost wafer and the upper surface of the lower wafer adjacent thereto; and raising the uppermost wafer for releasing.

摘要翻译： 本发明的目的是提供一种能够安全，简单且可靠地释放晶片并提高晶片释放速率的晶片释放方法，晶片释放装置和使用晶片释放装置的晶片释放转印机。 本发明的晶片释放方法包括以下步骤：沿着从晶体习性线轴（A-A）偏移15至75度的角度的轴向（L-L'）按压最上面的晶片 '）或（B-B'）的顺时针或逆时针方向; 向上弯曲最上面的晶片的周边部分，以使得最上面的晶片在轴向方向（L-L'）上的弯曲应力偏移角度; 将流体吹送到最上面的晶片的下表面和与其相邻的下晶片的上表面之间的间隙中; 并抬起最上面的用于释放的晶片。

公开(公告)号：US20060286769A1

公开(公告)日：2006-12-21

申请号：US10554371

申请日：2003-08-13

申请人： Masato Tsuchiya ,  Ikuo Mashimo ,  Koichi Saito

发明人： Masato Tsuchiya ,  Ikuo Mashimo ,  Koichi Saito

IPC分类号： H01L21/30

CPC分类号： B65H3/0816 ,  B65H3/48 ,  H01L21/67092 ,  H01L21/6838

摘要： It is an object of the present invention to provide a wafer release method capable of releasing a wafer safely, simply and certainly and improving a wafer releasing rate, a wafer release apparatus and a wafer release transfer machine using the wafer release apparatus. A wafer release method of the present invention comprises the steps of: pressing the uppermost wafer along an axis direction (L-L′) shifted by an angle in the range of from 15 to 75 degrees from a crystal habit line axis (A-A′) or (B-B′) of the uppermost wafer clockwise or counterclockwise; bending upwardly the peripheral portion of the uppermost wafer so as to cause a bending stress in the uppermost wafer in the axis direction (L-L′) shifted by the angle; blowing a fluid into a clearance between the lower surface of the uppermost wafer and the upper surface of the lower wafer adjacent thereto; and raising the uppermost wafer for releasing.

摘要翻译： 本发明的目的是提供一种能够安全，简单且可靠地释放晶片并提高晶片释放速率的晶片释放方法，晶片释放装置和使用晶片释放装置的晶片释放转印机。 本发明的晶片释放方法包括以下步骤：沿着从晶体习性线轴（A-A）偏移15至75度的角度的轴向（L-L'）按压最上面的晶片 '）或（B-B'）的顺时针或逆时针方向; 向上弯曲最上面的晶片的周边部分，以使得最上面的晶片在轴向方向（L-L'）上的弯曲应力偏移角度; 将流体吹送到最上面的晶片的下表面和与其相邻的下晶片的上表面之间的间隙中; 并抬起最上面的用于释放的晶片。

公开(公告)号：US20090266414A1

公开(公告)日：2009-10-29

申请号：US12296648

申请日：2007-04-20

申请人： Masato Tsuchiya ,  Ikuo Mashimo ,  Yoshimichi Kimura

发明人： Masato Tsuchiya ,  Ikuo Mashimo ,  Yoshimichi Kimura

IPC分类号： H01L31/04 ,  H01L21/465 ,  H01L31/18 ,  C09K13/00

CPC分类号： H01L31/18 ,  H01L31/02363 ,  Y02E10/50

摘要： Provided are: a process for producing safely at low cost a semiconductor substrate excellent in photoelectric conversion efficiency, and stable in an etching rate and a pyramid shape, which is capable of uniformly forming a fine uneven structure with desired size suitable for a solar cell on the surface thereof; a semiconductor substrate for solar application having a uniform and fine pyramid-shaped uneven structure in a plane; and an etching solution for forming a semiconductor substrate having a uniform and fine uneven structure, which has a high stability at initial use. The process comprises etching a semiconductor substrate with the use of an alkaline etching solution containing at least one kind selected from the group consisting of carboxylic acids having a carbon number of 1 to 12 and having at least one carboxyl group in a molecule, salts thereof, and silicon, to thereby form an uneven structure on the surface of the semiconductor substrate.

摘要翻译： 提供：以低成本安全地生产光电转换效率优异的半导体基板，蚀刻速度和金字塔形状稳定的方法，其能够均匀地形成具有适合于太阳能电池的所需尺寸的精细不均匀结构 其表面; 一种用于太阳能应用的半导体衬底，其在平面中具有均匀且精细的棱锥形不均匀结构; 以及用于形成具有均匀且精细不均匀结构的半导体衬底的蚀刻溶液，其在初始使用时具有高稳定性。 该方法包括使用含有选自碳数为1至12的羧酸和分子中至少一个羧基的羧酸中的至少一种的碱性蚀刻溶液蚀刻半导体衬底，其盐， 和硅，从而在半导体衬底的表面上形成不均匀的结构。

公开(公告)号：US20100269903A1

公开(公告)日：2010-10-28

申请号：US12745521

申请日：2008-11-28

申请人： Masato Tsuchiya ,  Ikuo Mashimo ,  Yoshimichi Kimura ,  Takehisa Kato ,  Masahiko Kakizawa

发明人： Masato Tsuchiya ,  Ikuo Mashimo ,  Yoshimichi Kimura ,  Takehisa Kato ,  Masahiko Kakizawa

IPC分类号： H01L31/0368 ,  H01L21/306

CPC分类号： H01L31/02363 ,  H01L31/04 ,  Y02E10/50

摘要： Provided are: a safe, low-cost method of producing a polycrystalline silicon substrate excellent in photoelectric conversion efficiency by which a uniform, fine uneven structure suited to a solar cell can be simply formed on the surface of the polycrystalline silicon substrate; and a polycrystalline silicon substrate having a uniform, fine, pyramid-shaped uneven structure so that its reflectance can be significantly reduced. The uneven structure is formed on the surface of the polycrystalline silicon substrate by etching the polycrystalline silicon substrate with an alkaline etching solution containing at least one kind selected from the group consisting of a carboxylic acid having 1 or more and 12 or less carbon atoms and each having at least one carboxyl group in one molecule, and salts of the acids.

摘要翻译： 提供了一种安全，低成本的制造多晶硅基板的方法，该多晶硅基板具有优异的光电转换效率，通过该方法可以在多晶硅基板的表面上简单地形成适合于太阳能电池的均匀的微小不均匀结构; 以及具有均匀的，细小的棱锥状的不均匀结构的多晶硅基板，从而能够显着降低其反射率。 通过用含有选自碳原子数为1以上且12以下的羧酸中的至少一种的碱性蚀刻溶液蚀刻多晶硅基板，在多晶硅基板的表面上形成凹凸结构， 在一个分子中具有至少一个羧基，和酸的盐。

公开(公告)号：US20090166780A1

公开(公告)日：2009-07-02

申请号：US12394402

申请日：2009-02-27

申请人： Masato Tsuchiya ,  Ikuo Mashimo ,  Yoshimichi Kimura

发明人： Masato Tsuchiya ,  Ikuo Mashimo ,  Yoshimichi Kimura

IPC分类号： H01L31/0236 ,  H01L21/306

CPC分类号： C30B33/10 ,  H01L31/02363 ,  H01L31/18 ,  Y02E10/50

摘要： Provided is: a process for producing safely at low cost a semiconductor substrate excellent in photoelectric transduction efficiency, in which a fine uneven structure suitable for a solar cell can be formed uniformly with desired size on the surface of the semiconductor substrate; a semiconductor substrate for solar application in which a uniform and fine pyramid-shaped uneven structure is provided uniformly within the surface thereof, and an etching solution for forming a semiconductor substrate having a uniform and fine uneven structure. A semiconductor substrate is etched with the use of an alkali etching solution containing at least one kind selected from the group consisting of carboxylic acids having a carbon number of 1 to 12 and having at least one carboxyl group in a molecule, and salts thereof, to thereby form an uneven structure on the surface of the semiconductor substrate.

摘要翻译： 提供：以低成本安全地制造具有优异的光电转换效率的半导体衬底的方法，其中可以在半导体衬底的表面上均匀地形成适合于太阳能电池的精细不均匀结构以期望的尺寸; 用于太阳能应用的半导体衬底，其均匀且精细的棱锥形不均匀结构在其表面内均匀地提供，以及用于形成具有均匀和细微不均匀结构的半导体衬底的蚀刻溶液。 使用碱性蚀刻溶液蚀刻半导体衬底，所述碱蚀刻溶液含有选自碳数为1至12的羧酸和分子中至少一个羧基的羧酸及其盐，至少一种， 从而在半导体衬底的表面上形成不均匀的结构。

公开(公告)号：US20080048279A1

公开(公告)日：2008-02-28

申请号：US11577351

申请日：2005-10-26

申请人： Masato Tsuchiya ,  Ikuo Mashimo ,  Yoshimichi Kimura

发明人： Masato Tsuchiya ,  Ikuo Mashimo ,  Yoshimichi Kimura

IPC分类号： H01L21/306 ,  C09K13/02 ,  H01L31/00

CPC分类号： C30B33/10 ,  H01L31/02363 ,  H01L31/18 ,  Y02E10/50

摘要： Provided is: a process for producing safely at low cost a semiconductor substrate excellent in photoelectric transduction efficiency, in which a fine uneven structure suitable for a solar cell can be formed uniformly with desired size on the surface of the semiconductor substrate; a semiconductor substrate for solar application in which a uniform and fine pyramid-shaped uneven structure is provided uniformly within the surface thereof; and an etching solution for forming a semiconductor substrate having a uniform and fine uneven structure. A semiconductor substrate is etched with the use of an alkali etching solution containing at least one kind selected from the group consisting of carboxylic acids having a carbon number of 1 to 12 and having at least one carboxyl group in a molecule, and salts thereof, to thereby form an uneven structure on the surface of the semiconductor substrate.

摘要翻译： 提供：以低成本安全地制造具有优异的光电转换效率的半导体衬底的方法，其中可以在半导体衬底的表面上均匀地形成适合于太阳能电池的精细不均匀结构以期望的尺寸; 用于太阳能应用的半导体衬底，其均匀且精细的棱锥形不均匀结构在其表面内均匀地设置; 以及用于形成均匀且细微的凹凸结构的半导体衬底的蚀刻溶液。 使用碱性蚀刻溶液蚀刻半导体衬底，所述碱蚀刻溶液含有选自碳数为1至12的羧酸和分子中至少一个羧基的羧酸及其盐，至少一种， 从而在半导体衬底的表面上形成不均匀的结构。