公开(公告)号：US5939130A

公开(公告)日：1999-08-17

申请号：US863427

申请日：1997-05-27

申请人： Masatoshi Shiraishi ,  Yukio Kiba ,  Kunie Ogata

发明人： Masatoshi Shiraishi ,  Yukio Kiba ,  Kunie Ogata

IPC分类号： B05C11/08 ,  B05D1/40 ,  G03F7/16 ,  H01L21/027 ,  B05D3/12

CPC分类号： G03F7/162

摘要： A coating film forming method for forming a resist coating film on an upper surface of a wafer held by a spin chuck in a chamber includes (a) the step of keeping preliminary correlation data representing correlation between a wafer rotating speed and the thickness of the resist coating film formed on the wafer in the chamber, (b) the step of conveying the wafer into the chamber and holding the wafer by the spin chuck, (c) the step of pouring the resist liquid onto the wafer and spin-rotating the wafer to form a resist coating film on the upper surface of the wafer, (d) the step of detecting the thickness of the formed resist coating film by a sensor, (e) the step of detecting a rotating speed of the spin chuck by a sensor, and (f) the step of, on the basis of the detected film thickness and the preliminary correlation data, correcting a set rotating speed of the spin chuck to feedback-control a resist coating process for a next wafer.

摘要翻译： 在由室内的旋转卡盘保持的晶片的上表面上形成抗蚀剂涂膜的涂膜形成方法包括：（a）保持表示晶片转速与抗蚀剂厚度之间的相关性的初步相关数据的步骤 （b）将晶片输送到室中并通过旋转卡盘保持晶片的步骤，（c）将抗蚀剂液体注入晶片并旋转晶片的步骤 在晶片的上表面形成抗蚀剂涂膜，（d）通过传感器检测形成的抗蚀剂涂膜的厚度的步骤，（e）通过传感器检测旋转卡盘的转速的步骤 ，以及（f）基于所检测的膜厚度和初步相关数据，校正旋转卡盘的设定转速以反馈控制下一个晶片的抗蚀剂涂覆处理的步骤。

公开(公告)号：US20110183073A1

公开(公告)日：2011-07-28

申请号：US13004246

申请日：2011-01-11

申请人： Norifumi Sato ,  Yukio Kiba ,  Tetsushi Miyamoto ,  Kazuhisa Hasebe

发明人： Norifumi Sato ,  Yukio Kiba ,  Tetsushi Miyamoto ,  Kazuhisa Hasebe

IPC分类号： B05D3/00 ,  B05C9/10

CPC分类号： H01L21/6715 ,  G03F7/3021 ,  H01L21/67109 ,  H01L21/67178 ,  H01L21/67742 ,  H01L21/67748

摘要： The present invention is a method of developing a resist film on a substrate using a developing solution at a predetermined temperature lower than room temperature, including a first cooling step of mounting and cooling the substrate on a cooling plate at a temperature lower than room temperature and higher than the predetermined temperature in a cooling apparatus; a second cooling step of then carrying the substrate into a developing apparatus and supplying a rinse solution at the predetermined temperature or lower onto the substrate to cool the substrate in the developing apparatus; a developing step of then supplying the developing solution onto the substrate and developing the resist film on the substrate to form a resist pattern in the resist film; and a cleaning step of then supplying a rinse solution at the predetermined temperature onto the substrate to clean a front surface of the substrate.

摘要翻译： 本发明是一种在低于室温的预定温度下使用显影液在基板上显影抗蚀剂膜的方法，该方法包括：在低于室温的温度下将基板安装和冷却在冷却板上的第一冷却步骤;以及 高于冷却装置中的预定温度; 第二冷却步骤，然后将衬底运送到显影装置中并将预定温度或更低的冲洗溶液供应到衬底上以冷却显影装置中的衬底; 显影步骤，然后将显影液供应到基底上，并在基底上显影抗蚀剂膜，以在抗蚀剂膜中形成抗蚀剂图案; 以及清洗步骤，然后将所述预定温度的冲洗溶液供应到所述基板上以清洁所述基板的前表面。

公开(公告)号：US07387455B2

公开(公告)日：2008-06-17

申请号：US10515635

申请日：2003-05-16

申请人： Tetsutoshi Awamura ,  Yukio Kiba ,  Keiichi Tanaka ,  Takahiro Okubo ,  Shuuichi Nishikido

发明人： Tetsutoshi Awamura ,  Yukio Kiba ,  Keiichi Tanaka ,  Takahiro Okubo ,  Shuuichi Nishikido

IPC分类号： H01L21/302

CPC分类号： H01L21/67178 ,  G03F7/30 ,  G03F7/3021 ,  H01L21/6715 ,  H01L21/67184 ,  H01L21/67225

摘要： Rinsing nozzles 310a to 310e are moved on a wafer W while they are discharging rinsing solution 326. At that point, discharging openings 317a to 317e are contacted to developing solution 350 coated on the wafer W or rinsing solution 326 on the wafer W. Thus, the impact against the wafer W can be suppressed. As a result, pattern collapse can be prevented. In addition, a front portion of the developing solution 350 can push away the developing solution 350.

摘要翻译： 冲洗喷嘴310a至310e在排出冲洗溶液326时在晶片W上移动。 此时，排出口317a至317e与涂覆在晶片W上的显影液350或晶片W上的漂洗溶液326接触。因此，能够抑制对晶片W的冲击。 结果，可以防止图案倒塌。 此外，显影液350的前面部分可以推开显影液350。

公开(公告)号：US5866307A

公开(公告)日：1999-02-02

申请号：US927418

申请日：1997-09-11

申请人： Yukio Kiba ,  Norio Semba ,  Keizo Hasebe

发明人： Yukio Kiba ,  Norio Semba ,  Keizo Hasebe

IPC分类号： B05D1/00 ,  B05D3/00 ,  G03F7/16 ,  G03F7/30 ,  G03C5/29

CPC分类号： G03F7/3021 ,  B05D1/005 ,  B05D3/002 ,  G03F7/16

摘要： A resist processing method for introducing a pressurized gas into a vessel storing a solution, sending the solution from the vessel to a nozzle by way of a supply line by means of the pressurized gas, and supplying the solution from the nozzle to a substrate.

摘要翻译： 一种抗蚀剂加工方法，用于将加压气体引入到储存溶液的容器中，通过加压气体将溶液从供应管路从容器送到喷嘴，并将溶液从喷嘴供给到基底。

公开(公告)号：US08518480B2

公开(公告)日：2013-08-27

申请号：US13004246

申请日：2011-01-11

申请人： Norifumi Sato ,  Yukio Kiba ,  Tetsushi Miyamoto ,  Kazuhisa Hasebe

发明人： Norifumi Sato ,  Yukio Kiba ,  Tetsushi Miyamoto ,  Kazuhisa Hasebe

IPC分类号： B05C5/02 ,  B05D1/26

CPC分类号： H01L21/6715 ,  G03F7/3021 ,  H01L21/67109 ,  H01L21/67178 ,  H01L21/67742 ,  H01L21/67748

摘要： The present invention is a method of developing a resist film on a substrate using a developing solution at a predetermined temperature lower than room temperature, including a first cooling step of mounting and cooling the substrate on a cooling plate at a temperature lower than room temperature and higher than the predetermined temperature in a cooling apparatus; a second cooling step of then carrying the substrate into a developing apparatus and supplying a rinse solution at the predetermined temperature or lower onto the substrate to cool the substrate in the developing apparatus; a developing step of then supplying the developing solution onto the substrate and developing the resist film on the substrate to form a resist pattern in the resist film; and a cleaning step of then supplying a rinse solution at the predetermined temperature onto the substrate to clean a front surface of the substrate.

摘要翻译： 本发明是一种在低于室温的预定温度下使用显影液在基板上显影抗蚀剂膜的方法，该方法包括：在低于室温的温度下将基板安装和冷却在冷却板上的第一冷却步骤;以及 高于冷却装置中的预定温度; 第二冷却步骤，然后将衬底运送到显影装置中并将预定温度或更低的冲洗溶液供应到衬底上以冷却显影装置中的衬底; 显影步骤，然后将显影液供应到基底上，并在基底上显影抗蚀剂膜，以在抗蚀剂膜中形成抗蚀剂图案; 以及清洗步骤，然后将所述预定温度的冲洗溶液供应到所述基板上以清洁所述基板的前表面。

公开(公告)号：US20050223980A1

公开(公告)日：2005-10-13

申请号：US10515635

申请日：2003-05-16

申请人： Tetsutoshi Awamura ,  Yukio Kiba ,  Keiichi Tanaka ,  Takahiro Okubo ,  Shuuichi Nishikido

发明人： Tetsutoshi Awamura ,  Yukio Kiba ,  Keiichi Tanaka ,  Takahiro Okubo ,  Shuuichi Nishikido

IPC分类号： G03F7/30 ,  H01L21/00 ,  B05C5/00 ,  B05B7/00 ,  B05B9/06

CPC分类号： H01L21/67178 ,  G03F7/30 ,  G03F7/3021 ,  H01L21/6715 ,  H01L21/67184 ,  H01L21/67225

摘要： Rinsing nozzles 310a to 310e are moved on a wafer W while they are discharging rinsing solution 326. At that point, discharging openings 317a to 317e are contacted to developing solution 350 coated on the wafer W or rinsing solution 326 on the wafer W. Thus, the impact against the wafer W can be suppressed. As a result, pattern collapse can be prevented. In addition, a front portion of the developing solution 350 can push away the developing solution 350.

摘要翻译： 冲洗喷嘴310a至310e在排出冲洗溶液326时在晶片W上移动。 此时，排出口317a至317e与涂覆在晶片W上的显影液350或晶片W上的漂洗溶液326接触。因此，能够抑制对晶片W的冲击。 结果，可以防止图案倒塌。 此外，显影液350的前面部分可以推开显影液350。

公开(公告)号：US06217657B1

公开(公告)日：2001-04-17

申请号：US09175963

申请日：1998-10-21

申请人： Yukio Kiba ,  Norio Semba ,  Keizo Hasebe

发明人： Yukio Kiba ,  Norio Semba ,  Keizo Hasebe

IPC分类号： B05C502

CPC分类号： G03F7/3021 ,  B05D1/005 ,  B05D3/002 ,  G03F7/16

摘要： A resist processing system includes a sensor connected for detecting the surface level of the processing solution contained in an intermediate tank, and a controller connected for controlling the fluid pressure on the basis of the surface level detected by the sensor.

摘要翻译： 抗蚀剂处理系统包括连接用于检测包含在中间罐中的处理溶液的表面水平的传感器和连接用于基于由传感器检测到的表面水平来控制流体压力的控制器。