公开(公告)号：US20130071996A1

公开(公告)日：2013-03-21

申请号：US13613050

申请日：2012-09-13

申请人： Masatoshi DEGUCHI ,  Masatoshi SHIRAISHI ,  Shinji OKADA

发明人： Masatoshi DEGUCHI ,  Masatoshi SHIRAISHI ,  Shinji OKADA

IPC分类号： H01L21/762 ,  B32B37/10 ,  B32B37/06

CPC分类号： H01L21/6715 ,  B32B38/0036 ,  B32B2038/1891 ,  B32B2309/02 ,  B32B2309/62 ,  B32B2457/14 ,  B32B2457/20 ,  H01L21/187 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/6838 ,  H01L21/68707 ,  H01L21/68742

摘要： When joining a processing target substrate and a supporting substrate together by suction-holding the processing substrate and the supporting substrate respectively on a first holding unit and a second holding unit arranged to face each other and pressing the second holding unit toward the first holding unit while heating the substrates by heating mechanisms of the holding units, the present invention preheats at least the processing target substrate before suction-holding the processing target substrate on the first holding unit to suppress generation of particles when joining the processing target substrate and the supporting substrate together so as to properly perform the joining of the processing target substrate and the supporting substrate.

摘要翻译： 通过将处理基板和支撑基板分别吸附在第一保持单元和第二保持单元上而将处理目标基板和支撑基板接合在一起，第一保持单元和第二保持单元被布置成彼此面对并且将第二保持单元朝向第一保持单元按压，同时 通过加热保持单元的加热机构来加热基板，本发明在将处理对象基板吸附到第一保持单元之前至少预热处理对象基板，以抑制在将处理对象基板与支撑基板接合在一起时产生粒子 从而适当地执行处理目标基板和支撑基板的接合。

公开(公告)号：US5939130A

公开(公告)日：1999-08-17

申请号：US863427

申请日：1997-05-27

申请人： Masatoshi Shiraishi ,  Yukio Kiba ,  Kunie Ogata

发明人： Masatoshi Shiraishi ,  Yukio Kiba ,  Kunie Ogata

IPC分类号： B05C11/08 ,  B05D1/40 ,  G03F7/16 ,  H01L21/027 ,  B05D3/12

CPC分类号： G03F7/162

摘要： A coating film forming method for forming a resist coating film on an upper surface of a wafer held by a spin chuck in a chamber includes (a) the step of keeping preliminary correlation data representing correlation between a wafer rotating speed and the thickness of the resist coating film formed on the wafer in the chamber, (b) the step of conveying the wafer into the chamber and holding the wafer by the spin chuck, (c) the step of pouring the resist liquid onto the wafer and spin-rotating the wafer to form a resist coating film on the upper surface of the wafer, (d) the step of detecting the thickness of the formed resist coating film by a sensor, (e) the step of detecting a rotating speed of the spin chuck by a sensor, and (f) the step of, on the basis of the detected film thickness and the preliminary correlation data, correcting a set rotating speed of the spin chuck to feedback-control a resist coating process for a next wafer.

摘要翻译： 在由室内的旋转卡盘保持的晶片的上表面上形成抗蚀剂涂膜的涂膜形成方法包括：（a）保持表示晶片转速与抗蚀剂厚度之间的相关性的初步相关数据的步骤 （b）将晶片输送到室中并通过旋转卡盘保持晶片的步骤，（c）将抗蚀剂液体注入晶片并旋转晶片的步骤 在晶片的上表面形成抗蚀剂涂膜，（d）通过传感器检测形成的抗蚀剂涂膜的厚度的步骤，（e）通过传感器检测旋转卡盘的转速的步骤 ，以及（f）基于所检测的膜厚度和初步相关数据，校正旋转卡盘的设定转速以反馈控制下一个晶片的抗蚀剂涂覆处理的步骤。

公开(公告)号：US20140335633A1

公开(公告)日：2014-11-13

申请号：US14343598

申请日：2012-08-22

申请人： Shinji Okada ,  Masatoshi Shiraishi ,  Masatoshi Deguchi

发明人： Shinji Okada ,  Masatoshi Shiraishi ,  Masatoshi Deguchi

IPC分类号： H01L21/66 ,  H01L21/67

CPC分类号： H01L22/12 ,  H01L21/02068 ,  H01L21/67017 ,  H01L21/67092 ,  H01L21/6715 ,  H01L21/6835 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  Y10T156/1911

摘要： A superposed wafer is separated to a processing target wafer and a supporting wafer while being heated. Then, an adhesive on a joint surface of the processing target wafer is removed by supplying an organic solvent onto the joint surface of the processing target wafer. Then, an oxide film formed on the predetermined pattern on the joint surface of the processing target wafer is removed by supplying acetic acid to the joint surface of the processing target wafer. Then, the joint surface of the processing target wafer is inspected. Then, based on an inspection result, the adhesive on the joint surface of the processing target wafer is removed and the oxide film formed on the predetermined pattern on the joint surface of the processing target wafer is removed.

摘要翻译： 叠加的晶片在被加热的同时被分离成处理目标晶片和支撑晶片。 然后，通过向处理目标晶片的接合表面上提供有机溶剂，去除处理目标晶片的接合表面上的粘合剂。 然后，通过向处理目标晶片的接合表面供给乙酸，去除在处理目标晶片的接合表面上形成在预定图案上的氧化膜。 然后，检查处理目标晶片的接合表面。 然后，基于检查结果，去除处理目标晶片的接合面上的粘合剂，去除在处理对象晶片的接合面上形成在规定图案上的氧化膜。

公开(公告)号：US07550043B2

公开(公告)日：2009-06-23

申请号：US10735926

申请日：2003-12-16

申请人： Masatoshi Shiraishi ,  Masatsugu Nakama ,  Hideyuki Takamori

发明人： Masatoshi Shiraishi ,  Masatsugu Nakama ,  Hideyuki Takamori

IPC分类号： B05C11/10 ,  G03D5/00

CPC分类号： H01L21/67178 ,  G03F7/168 ,  G03F7/2022 ,  H01L21/6715 ,  H01L21/67173

摘要： A processing chamber actually performs a heating process for a substrate. The processing chamber has an upper plate, a lower plate, and an exhaust opening. The upper plate heats a resist from a front surface of the substrate. The lower plate heats the resist from a rear surface of the substrate. The exhaust opening exhausts gas from the processing chamber. The upper plate is disposed in such a manner that it can be raised and lowered in the processing chamber by an upper air cylinder that composes an upper driving mechanism. The lower plate is disposed on a floor of the processing chamber. The exhaust opening is connected to a pump through a pipe. Heating temperature and heating time of the upper plate and the lower plate are controlled by a heating control portion. A pressure in the processing chamber is controlled by a pump. The pump is controlled by a pressure controlling portion.

摘要翻译： 处理室实际上对基板进行加热处理。 处理室具有上板，下板和排气口。 上板从基板的前表面加热抗蚀剂。 下板从基板的后表面加热抗蚀剂。 排气口从处理室排出气体。 上板以能够由构成上部驱动机构的上部气缸在处理室内升降的方式配置。 下板设置在处理室的地板上。 排气口通过管道连接到泵。 上板和下板的加热温度和加热时间由加热控制部控制。 处理室中的压力由泵控制。 泵由压力控制部分控制。

公开(公告)号：US20070205181A1

公开(公告)日：2007-09-06

申请号：US11681550

申请日：2007-03-02

申请人： Yutaka Asou ,  Masatoshi Shiraishi

发明人： Yutaka Asou ,  Masatoshi Shiraishi

IPC分类号： C23F1/00 ,  B44C1/22

CPC分类号： G03F7/40 ,  G02F1/1303 ,  H01L21/0273 ,  H01L29/66765 ,  H01L29/78603

摘要： Disclosed is a substrate processing method that dissolves and deforms a photoresist film having a first pattern formed on a substrate to reshape the resist film into a second pattern. The method includes: evacuating a processing chamber, thereby reducing an internal pressure of the processing chamber from a standard pressure to a first target pressure lower than the standard pressure; introducing a solvent vapor-containing atmosphere into the processing chamber, thereby bringing the internal pressure back to the standard pressure; dissolving the resist film by a solvent contained in the solvent vapor-containing atmosphere; and evacuating a processing chamber, thereby reducing the internal pressure to a second target pressure higher than the first target pressure and lower than the standard pressure and discharging the solvent vapor-containing atmosphere from the processing chamber. Owing to the relatively low second target pressure, undesirable deformation of the resist film or defects in the resist film due to rapid evaporation of the solvent penetrated in the resist film can be prevented.

摘要翻译： 公开了一种基板处理方法，其使形成在基板上的第一图案的光致抗蚀剂膜溶解并变形，将抗蚀剂膜重新形成为第二图案。 该方法包括：抽空处理室，从而将处理室的内部压力从标准压力降低到低于标准压力的第一目标压力; 将含有溶剂蒸气的气氛引入处理室，从而使内部压力回到标准压力; 用包含在含溶剂蒸气的气氛中的溶剂溶解抗蚀剂膜; 并且排出处理室，从而将内部压力降低到高于第一目标压力并低于标准压力的第二目标压力，并将来自处理室的含溶剂蒸气的气体排出。 由于第二目标压力相对较低，可以防止抗蚀剂膜的不期望的变形或抗蚀剂膜中渗透的溶剂的快速蒸发引起的抗蚀剂膜中的缺陷。

公开(公告)号：US20140224414A1

公开(公告)日：2014-08-14

申请号：US14342704

申请日：2012-08-30

申请人： Shinji Okada ,  Masatoshi Shiraishi ,  Masatoshi Deguchi

发明人： Shinji Okada ,  Masatoshi Shiraishi ,  Masatoshi Deguchi

IPC分类号： B32B38/10 ,  B32B38/00

CPC分类号： B32B38/10 ,  B32B37/12 ,  B32B38/0012 ,  B32B2457/14 ,  C09J5/00 ,  H01L21/6708 ,  H01L21/67092 ,  H01L21/6715 ,  H01L21/6835 ,  H01L21/68707 ,  H01L2221/68327 ,  H01L2221/6834 ,  Y10T156/14

摘要： The present disclosure is a joining method that joins a target substrate and a support substrate, wherein the method has: a joining operation that includes pressing and joining the target substrate and the support substrate by interposing an adhesive therebetween; and an adhesive removing operation that includes supplying a solvent of the adhesive to the outer adhesive that is the adhesive between the target substrate and the support substrate protruding in the joining operation from the outer lateral surface of the stacked substrate made by joining the target substrate and the support substrate, and to remove the surface of the outer adhesive so that the outer adhesive is formed at a predetermined size.

摘要翻译： 本公开是连接目标基板和支撑基板的接合方法，其中，所述方法具有：连接操作，其包括通过在其间插入粘合剂来挤压和接合所述目标基板和所述支撑基板; 以及粘合剂去除操作，其包括将粘合剂的溶剂供应到作为在接合操作中突出的目标基板和支撑基板之间的粘合剂的外部粘合剂，所述粘合剂从通过连接目标基板制成的层叠基板的外侧表面和 支撑基板，并且去除外部粘合剂的表面，使得外部粘合剂形成为预定尺寸。

公开(公告)号：US20130062013A1

公开(公告)日：2013-03-14

申请号：US13609757

申请日：2012-09-11

申请人： Shinji OKADA ,  Masatoshi SHIRAISHI ,  Masatoshi DEGUCHI ,  Naoto YOSHITAKA ,  Shintaro SUGIHARA ,  Masataka MATSUNAGA

发明人： Shinji OKADA ,  Masatoshi SHIRAISHI ,  Masatoshi DEGUCHI ,  Naoto YOSHITAKA ,  Shintaro SUGIHARA ,  Masataka MATSUNAGA

IPC分类号： C09J5/06

CPC分类号： H01L21/67092 ,  H01L21/67109 ,  H01L21/67742 ,  H01L21/6838 ,  H01L21/68707

摘要： A joint apparatus that joins a processing target substrate and a supporting substrate together, includes: a processing container that is capable of hermetically closing an inside thereof; a joint unit that joins the processing target substrate and the supporting substrate together by pressing the processing target substrate and the supporting substrate via an adhesive; and a superposed substrate temperature regulation unit that temperature-regulates a superposed substrate joined in the joint unit, wherein the joint unit and the superposed substrate temperature regulation unit are arranged in the processing container, A delivery unit for delivering the processing target substrate, the supporting substrate, or the superposed substrate to/from an outside of the processing container is provided in the processing container, and the superposed substrate temperature regulation unit is provided in the delivery unit.

摘要翻译： 将加工对象基板和支撑基板连接在一起的联合装置包括：能够密封其内部的处理容器; 通过粘合剂对加工对象基板和支撑基板进行加压而将加工对象基板与支撑基板接合在一起的接合单元; 以及叠加的基板温度调节单元，其对连接在所述接合单元中的叠置基板进行温度调节，其中，所述接合单元和所述叠置基板温度调节单元配置在所述处理容器中，所述输送单元用于输送所述处理对象基板， 基板或与处理容器的外部叠置的基板设置在处理容器中，并且叠置的基板温度调节单元设置在输送单元中。

公开(公告)号：US5401316A

公开(公告)日：1995-03-28

申请号：US136373

申请日：1993-10-15

申请人： Masatoshi Shiraishi ,  Tomoko Hamada

发明人： Masatoshi Shiraishi ,  Tomoko Hamada

IPC分类号： G03F7/16 ,  C23C16/44 ,  C23C16/52 ,  G03F7/11 ,  H01L21/00 ,  H01L21/027 ,  H01L21/30 ,  B05C11/00 ,  C23C16/00

CPC分类号： H01L21/67103 ,  C23C16/4412 ,  C23C16/52 ,  Y10S438/974

摘要： Adhesion apparatus for applying a hydrophobic treatment to a semiconductor wafer comprises a tank housing a treating agent of liquid HMDS and a process chamber into which a mixed gas consisting of a vaporized HMDS coming from the tank and a carrier gas is supplied for applying a hydrophobic treatment to a wafer surface. A supporting table on which the wafer is disposed during the hydrophobic treatment is provided within the process chamber. A heater and a cooling water passageway are housed in the supporting table for controlling the wafer temperature. A concentration measuring section for measuring the HMDS concentration in the waste gas is connected to the discharge pipe of the process chamber. The concentration measuring section is connected to a CPU serving to derive a temperature control signal from the measured value of the HMDS concentration. The temperature control signal is transmitted to a temperature control section. Upon receipt of the temperature control signal, the temperature control section permits controlling the current supply to the heater or the cooling water supply to the cooling water passageway so as to change the temperature of the supporting table.

摘要翻译： 用于向半导体晶片施加疏水处理的粘合装置包括：容纳液体HMDS处理剂的容器和处理室，其中供应来自罐的蒸发的HMDS和载气组成的混合气体用于施加疏水处理 到晶片表面。 在处理室内设置有在疏水处理期间设置晶片的支撑台。 加热器和冷却水通道容纳在支撑台中用于控制晶片温度。 用于测量废气中的HMDS浓度的浓度测量部分连接到处理室的排出管。 浓度测量部分连接到用于从HMDS浓度的测量值导出温度控制信号的CPU。 温度控制信号被传送到温度控制部。 在接收到温度控制信号时，温度控制部分允许控制对加热器的电流供应或冷却水通道的冷却水供应，以便改变支撑台的温度。

公开(公告)号：US10008419B2

公开(公告)日：2018-06-26

申请号：US14343598

申请日：2012-08-22

申请人： Shinji Okada ,  Masatoshi Shiraishi ,  Masatoshi Deguchi ,  Xavier Francois Brun ,  Charles Wayne Singleton, Jr. ,  Kabirkumar Mirpuri

发明人： Shinji Okada ,  Masatoshi Shiraishi ,  Masatoshi Deguchi ,  Xavier Francois Brun ,  Charles Wayne Singleton, Jr. ,  Kabirkumar Mirpuri

IPC分类号： H01L21/00 ,  H01L21/66 ,  H01L21/67 ,  H01L21/02 ,  H01L21/683

CPC分类号： H01L22/12 ,  H01L21/02068 ,  H01L21/67017 ,  H01L21/67092 ,  H01L21/6715 ,  H01L21/6835 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  Y10T156/1911

摘要： A superposed wafer is separated to a processing target wafer and a supporting wafer while being heated. Then, an adhesive on a joint surface of the processing target wafer is removed by supplying an organic solvent onto the joint surface of the processing target wafer. Then, an oxide film formed on the predetermined pattern on the joint surface of the processing target wafer is removed by supplying acetic acid to the joint surface of the processing target wafer. Then, the joint surface of the processing target wafer is inspected. Then, based on an inspection result, the adhesive on the joint surface of the processing target wafer is removed and the oxide film formed on the predetermined pattern on the joint surface of the processing target wafer is removed.

公开(公告)号：US09484236B2

公开(公告)日：2016-11-01

申请号：US14342941

申请日：2012-08-03

申请人： Shinji Okada ,  Masatoshi Shiraishi ,  Masatoshi Deguchi

发明人： Shinji Okada ,  Masatoshi Shiraishi ,  Masatoshi Deguchi

IPC分类号： C03C15/00 ,  H01L21/683 ,  B81C1/00 ,  B32B38/10 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/683 ,  B32B38/10 ,  B81C1/00238 ,  H01L21/6708 ,  H01L21/67092 ,  H01L21/6715 ,  H01L21/6835 ,  H01L21/68707 ,  H01L2221/68327 ,  H01L2221/6834

摘要： This joining method of joining a target substrate and a support substrate includes: an adhesive coating operation that includes coating the target substrate or the support substrate with an adhesive; an adhesive removing operation that includes supplying a solvent for removing the adhesive onto an outer peripheral portion of the target substrate or the support substrate, which is coated with the adhesive in the adhesive coating operation, to thereby remove the adhesive on the outer peripheral portion; and a joining operation that includes pressing and joining the target substrate and the support substrate together, in which the adhesive on the outer peripheral portion is removed in the adhesive removing operation, and the support substrate coated with no adhesive, or pressing and joining the support substrate, in which the adhesive on the outer peripheral portion is removed in the adhesive removing operation, and the target substrate coated with no adhesive.

摘要翻译： 该接合目标基板和支撑基板的接合方法包括：粘合剂涂布操作，其包括用粘合剂涂覆目标基板或支撑基板; 一种粘合剂去除操作，其包括在粘合剂涂覆操作中将用于除去粘合剂的溶剂供给到涂覆有粘合剂的目标基材或支撑基材的外周部分上，从而除去外周部分上的粘合剂; 以及接合操作，其包括将粘合剂去除操作中除去外周部分上的粘合剂并且没有粘合剂涂覆的支撑基板，或者将支撑体 基板，其中在粘合剂去除操作中去除外周部分上的粘合剂，并且没有粘合剂涂覆的目标基板。