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公开(公告)号：US08785926B2
公开(公告)日：2014-07-22
申请号：US13860879
申请日：2013-04-11
申请人： Masatoshi Yokoyama , Tsutomu Murakawa , Kenichi Okazaki , Masayuki Sakakura , Takuya Matsuo , Yosuke Kanzaki , Hiroshi Matsukizono , Yoshitaka Yamamoto
发明人： Masatoshi Yokoyama , Tsutomu Murakawa , Kenichi Okazaki , Masayuki Sakakura , Takuya Matsuo , Yosuke Kanzaki , Hiroshi Matsukizono , Yoshitaka Yamamoto
IPC分类号： H01L29/10
CPC分类号： H01L29/7869 , H01L29/78696
摘要： The semiconductor conductor device includes a gate electrode 106, an oxide semiconductor film 110, a source electrode 114a and a drain electrode 114b, and a channel region formed in the oxide semiconductor film. The channel region is formed between a first side surface 214a of the source electrode and a second side surface 214b of the drain electrode opposite to the first side surface 214a. The oxide semiconductor film has a side surface which overlaps with the gate electrode, which has a first high resistance region positioned between a first region 206a that is the nearest to one end 314a of the first side surface 214a and a second region 206b that is the nearest to one end 314b of the second side surface 214b. The first high resistance region has a corrugated side surface or the like.
摘要翻译： 半导体导体器件包括栅电极106，氧化物半导体膜110，源极114a和漏电极114b以及形成在氧化物半导体膜中的沟道区。 沟道区形成在源电极的第一侧表面214a和与第一侧表面214a相对的漏电极的第二侧表面214b之间。 氧化物半导体膜具有与栅电极重叠的侧面，该侧面具有位于最靠近第一侧面214a的一端314a的第一区域206a和位于第一侧面214a的一端314a的第一区域206a之间的第一高电阻区域， 最靠近第二侧表面214b的一端314b。 第一高电阻区域具有波纹状的侧面等。
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公开(公告)号：US09196743B2
公开(公告)日：2015-11-24
申请号：US13860855
申请日：2013-04-11
申请人： Masatoshi Yokoyama , Tsutomu Murakawa , Kenichi Okazaki , Masayuki Sakakura , Takuya Matsuo , Akihiro Oda , Shigeyasu Mori , Yoshitaka Yamamoto
发明人： Masatoshi Yokoyama , Tsutomu Murakawa , Kenichi Okazaki , Masayuki Sakakura , Takuya Matsuo , Akihiro Oda , Shigeyasu Mori , Yoshitaka Yamamoto
IPC分类号： H01L29/10 , H01L29/786
CPC分类号： H01L29/7869
摘要： Provided is a semiconductor device in which generation of a parasitic channel in an end region of an oxide semiconductor film is suppressed. The semiconductor device includes a gate electrode, an oxide semiconductor film, a source electrode and a drain electrode, and a channel region formed in the oxide semiconductor film. The channel region is formed between a first side surface of the source electrode and a second side surface of the drain electrode opposite to the first side surface. The oxide semiconductor film has an end region which does not overlap with the gate electrode. The end region which does not overlap with the gate electrode is positioned between a first region that is the nearest to one end of the first side surface and a second region that is the nearest to one end of the second side surface.
摘要翻译： 提供了抑制氧化物半导体膜的端部区域中的寄生通道的产生的半导体装置。 半导体器件包括栅电极，氧化物半导体膜，源电极和漏极，以及形成在氧化物半导体膜中的沟道区。 沟道区形成在源电极的第一侧表面和与第一侧表面相对的漏电极的第二侧表面之间。 氧化物半导体膜具有不与栅电极重叠的端部区域。 不与栅电极重叠的端部区域位于最靠近第一侧表面的一端的第一区域和最靠近第二侧表面的一端的第二区域之间。
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3.发明授权公开(公告)号：US08456148B2
公开(公告)日：2013-06-04
申请号：US12686579
申请日：2010-01-13
申请人： Hiroki Inoue , Kiyoshi Kato , Shuhei Nagatsuka , Koichiro Kamata , Tsutomu Murakawa , Takahiro Tuji , Kaori Ikada
发明人： Hiroki Inoue , Kiyoshi Kato , Shuhei Nagatsuka , Koichiro Kamata , Tsutomu Murakawa , Takahiro Tuji , Kaori Ikada
摘要： One object of the present invention is to provide a regulator circuit with an improved noise margin. In a regulator circuit including a bias circuit generating a reference voltage on the basis of the potential difference between a first power supply terminal and a second power supply terminal, and a voltage regulator outputting a potential to an output terminal on the basis of a reference potential input from the bias circuit, a bypass capacitor is provided between a power supply terminal and a node to which a gate of a transistor included in the bias circuit is connected.
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公开(公告)号：US20110249885A1
公开(公告)日：2011-10-13
申请号：US13066274
申请日：2011-04-11
申请人： Tsutomu Murakawa , Yoshiaki Ogiso
发明人： Tsutomu Murakawa , Yoshiaki Ogiso
IPC分类号： G06K9/00
CPC分类号： H01J37/28 , G03F1/74 , H01J2237/221 , H01J2237/2811 , H01J2237/2817
摘要： A mask inspection system includes irradiation means for irradiating a sample with an electron beam, electron detection means for detecting a quantity of electrons generated from the sample, image processing means, storage means, and control means for calculating the number of divided images, which foam an entire combined image, on the basis of a size of a specified observed area of the sample, determining divided areas in such a way that divided images adjacent to each other overlap with each other, acquiring the divided images of the respective divided areas, and storing the divided images in the storage means, the divided images forming an entire combined image. The control means extracts two divided images adjacent to each other in a predetermined sequence starting from a specified one of the divided images. For each of the two divided images adjacent to each other, the control means then detects an image of a same pattern formation area included in an overlap area, and determines the detected image to be a combination reference image. The control means then combines the two divided images adjacent to each other on the basis of the combination reference image to thereby form an entire SEM image of the observed area.
摘要翻译： 掩模检查系统包括用于用电子束照射样品的照射装置，用于检测从样品产生的电子量的电子检测装置，图像处理装置，存储装置和用于计算分割图像数目的控制装置， 基于样本的指定观察区域的大小，整个组合图像以彼此相邻的分割图像彼此重叠的方式确定分割区域，获取各分割区域的分割图像，以及 将分割的图像存储在存储装置中，分割的图像形成整个组合图像。 控制装置以从分割图像中指定的一个开始的预定顺序提取彼此相邻的两个分割图像。 对于彼此相邻的两个分割图像中的每一个，控制装置然后检测包括在重叠区域中的相同图案形成区域的图像，并将检测到的图像确定为组合参考图像。 控制装置然后基于组合参考图像组合彼此相邻的两个分割图像，从而形成观察区域的整个SEM图像。
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公开(公告)号：US20110249108A1
公开(公告)日：2011-10-13
申请号：US13066180
申请日：2011-04-07
申请人： Yoshiaki Ogiso , Tsutomu Murakawa
发明人： Yoshiaki Ogiso , Tsutomu Murakawa
CPC分类号： H01J37/28 , G03F1/86 , H01J37/222 , H01J2237/2817
摘要： A mask inspection apparatus includes irradiation means for irradiating a sample with an electron beam, electron detection means for detecting a quantity of electrons generated from the sample having a pattern formed thereon by the irradiation with the electron beam, image processing means for generating image data of the pattern on the basis of the quantity of the electrons, and control means for creating a line profile and a differential profile of the pattern formed on the sample on the basis of the quantity of the electrons detected by the electron detection means. The control means detects a rising edge and a falling edge of the pattern on the basis of the differential profile, and then generates mask data of a multi-level structure on the basis of data of the edges and the image data created by the image processing means.
摘要翻译： 掩模检查装置包括用电子束照射样品的照射装置，用于通过用电子束的照射检测从其上形成有图案的样品产生的电子量的电子检测装置，用于产生电子束的图像数据的图像处理装置 基于电子量的图案，以及用于根据由电子检测装置检测的电子量产生样品上形成的图案的线轮廓和差分轮廓的控制装置。 控制装置根据差分轮廓检测图案的上升沿和下降沿，然后根据边缘数据和由图像处理产生的图像数据生成多级结构的掩码数据 手段。
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公开(公告)号：US20100196804A1
公开(公告)日：2010-08-05
申请号：US12653792
申请日：2009-12-21
CPC分类号： G03F1/86
摘要： Provided is a mask inspection apparatus including: emitting unit for emitting electron beams onto a sample; electron detecting unit for detecting the quantity of electrons produced, by the emission of the electron beams, from the sample with patterns formed thereon; image processing unit for generating image data for the patterns on the basis of the electron quantity; and controlling unit for controlling the emitting unit, the electron detecting unit, and the image processing unit. The controlling unit calculates, from the size of a designated observation area of the sample, a division number of divisional images that are synthesized to form a joint image that covers the entire designated observation area. The controlling unit determines divisional areas so that adjacent divisional areas partially overlap each other. The controlling unit acquires SEM images for the respective divisional areas. The controlling unit synthesizes the SEM images of the divisional areas on the basis of coordinate data for the divisional areas and on the basis of edge information for patterns included in the overlapping regions, and thereby creates an SEM image of a wide field of view that covers the observation area.
摘要翻译： 提供了一种掩模检查装置，包括：用于向样品发射电子束的发射单元; 电子检测单元，用于通过发射电子束从形成在其上的图案的样品检测产生的电子量; 图像处理单元，用于基于电子量产生用于图案的图像数据; 以及用于控制发光单元，电子检测单元和图像处理单元的控制单元。 控制单元根据样本的指定观察区域的大小，计算合成为形成覆盖整个指定观察区域的关节图像的分割图像的分割数。 控制单元确定分区，使得相邻的分区彼此部分重叠。 控制单元获取各分区的SEM图像。 控制单元基于分割区域的坐标数据并基于重叠区域中包含的图案的边缘信息来合成分割区域的SEM图像，从而创建覆盖了宽视场的SEM图像 观察区。
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公开(公告)号：US08698081B2
公开(公告)日：2014-04-15
申请号：US13317860
申请日：2011-10-31
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , G01N23/225
摘要： The pattern inspection apparatus includes: an irradiator irradiating a sample with an electron beam; an electron detector detecting an amount of electrons generated on the sample having a pattern formed thereon, by the irradiation of the electron beam; an image processor generating a SEM image of the pattern on the basis of the electron amount; and a controller acquiring defect position information on the pattern formed on the sample from an optical defect inspection device. The controller specifies a defect candidate pattern from the SEM image on the basis of the defect position information and judges whether a defect in the defect candidate pattern is to be transferred onto a wafer. The controller determines a view field of the SEM image on the basis of the defect position information and specifies the defect candidate pattern from image information on patterns displayed in the view field.
摘要翻译： 图案检查装置包括：用电子束照射样品的照射器; 电子检测器，通过电子束的照射检测在其上形成有图案的样品上产生的电子的量; 基于电子量产生图案的SEM图像的图像处理器; 以及控制器从光学缺陷检查装置获取关于在样品上形成的图案的缺陷位置信息。 控制器基于缺陷位置信息从SEM图像指定缺陷候选图案，并判断缺陷候选图案中的缺陷是否被转印到晶片上。 控制器基于缺陷位置信息确定SEM图像的视野，并根据视场中显示的图案的图像信息指定缺陷候选模式。
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公开(公告)号：US08559697B2
公开(公告)日：2013-10-15
申请号：US13066274
申请日：2011-04-11
申请人： Tsutomu Murakawa , Yoshiaki Ogiso
发明人： Tsutomu Murakawa , Yoshiaki Ogiso
IPC分类号： G06K9/00
CPC分类号： H01J37/28 , G03F1/74 , H01J2237/221 , H01J2237/2811 , H01J2237/2817
摘要： A mask inspection system includes irradiation means for irradiating a sample with an electron beam, electron detection means for detecting a quantity of electrons generated from the sample, image processing means, storage means, and control means for determining divided areas in such a way that divided images adjacent to each other overlap with each other, and acquiring the divided images of the respective divided areas. The control means extracts two divided images adjacent to each other in a predetermined sequence, then detects an image of a same pattern formation area included in an overlap area, and determines the detected image to be a combination reference image. The control means then combines the two divided images adjacent to each other on the basis of the combination reference image to thereby form an entire SEM image of the observed area.
摘要翻译： 掩模检查系统包括用于用电子束照射样品的照射装置，用于检测从样品产生的电子量的电子检测装置，图像处理装置，存储装置和用于确定分割区域的分割区域的控制装置， 彼此相邻的图像彼此重叠，并且获取各分割区域的分割图像。 控制装置以预定的顺序提取彼此相邻的两个分割图像，然后检测包括在重叠区域中的相同图案形成区域的图像，并将检测到的图像确定为组合参考图像。 控制装置然后基于组合参考图像组合彼此相邻的两个分割图像，从而形成观察区域的整个SEM图像。
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9.发明授权公开(公告)号：US08344719B2
公开(公告)日：2013-01-01
申请号：US12686579
申请日：2010-01-13
申请人： Hiroki Inoue , Kiyoshi Kato , Shuhei Nagatsuka , Koichiro Kamata , Tsutomu Murakawa , Takahiro Tuji , Kaori Ikada
发明人： Hiroki Inoue , Kiyoshi Kato , Shuhei Nagatsuka , Koichiro Kamata , Tsutomu Murakawa , Takahiro Tuji , Kaori Ikada
摘要： One object of the present invention is to provide a regulator circuit with an improved noise margin. In a regulator circuit including a bias circuit generating a reference voltage on the basis of the potential difference between a first power supply terminal and a second power supply terminal, and a voltage regulator outputting a potential to an output terminal on the basis of a reference potential input from the bias circuit, a bypass capacitor is provided between a power supply terminal and a node to which a gate of a transistor included in the bias circuit is connected.
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公开(公告)号：US20120037993A1
公开(公告)日：2012-02-16
申请号：US13280716
申请日：2011-10-25
申请人： Shunpei YAMAZAKI , Yuugo Goto , Tsutomu Murakawa
发明人： Shunpei YAMAZAKI , Yuugo Goto , Tsutomu Murakawa
CPC分类号： H01L27/1218
摘要： A semiconductor device in which damages to an element such as a transistor are reduced even when external force such as bending is applied and stress is generated in the semiconductor device. The semiconductor device includes a first island-like reinforcement film over a substrate having flexibility; a semiconductor film including a channel formation region and an impurity region over the first island-like reinforcement film; a first conductive film over the channel formation region with a gate insulating film interposed therebetween; a second island-like reinforcement film covering the first conductive film and the gate insulating film.
摘要翻译： 即使在施加诸如弯曲的外力并且在半导体器件中产生应力的情况下，诸如晶体管的元件的损坏也减小的半导体器件。 半导体器件包括在具有柔性的衬底上的第一岛状增强膜; 包括第一岛状增强膜上的沟道形成区域和杂质区域的半导体膜; 在沟道形成区域上的第一导电膜，其间插入有栅极绝缘膜; 覆盖第一导电膜和栅极绝缘膜的第二岛状加强膜。
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