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公开(公告)号:US20110279798A1
公开(公告)日:2011-11-17
申请号:US13067139
申请日:2011-05-11
申请人: Masayoshi Danbata , Hisanori Ueno
发明人: Masayoshi Danbata , Hisanori Ueno
IPC分类号: G03B27/34
CPC分类号: G03F7/2051 , G03F7/70066 , G03F7/70525 , G03F9/7011 , G03F9/7026
摘要: An exposure method includes the following processes. An autofocus scan process is performed to detect a defocused portion of a first resist film over a semiconductor wafer and to generate a detection signal that indicates the defocused portion detected. A first exposure scan process is performed while selectively blinding the first resist film, with reference to a detection signal related to the defocused portion detected.
摘要翻译: 曝光方法包括以下处理。 执行自动聚焦扫描处理以检测半导体晶片上的第一抗蚀剂膜的散焦部分并产生指示所检测到的散焦部分的检测信号。 参照与检测到的散焦部分相关的检测信号,进行第一曝光扫描处理,同时选择性地使第一抗蚀剂膜变暗。
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公开(公告)号:US08558990B2
公开(公告)日:2013-10-15
申请号:US13067139
申请日:2011-05-11
申请人: Masayoshi Danbata , Hisanori Ueno
发明人: Masayoshi Danbata , Hisanori Ueno
CPC分类号: G03F7/2051 , G03F7/70066 , G03F7/70525 , G03F9/7011 , G03F9/7026
摘要: An exposure method includes the following processes. An autofocus scan process is performed to detect a defocused portion of a first resist film over a semiconductor wafer and to generate a detection signal that indicates the defocused portion detected. A first exposure scan process is performed while selectively blinding the first resist film, with reference to a detection signal related to the defocused portion detected.
摘要翻译: 曝光方法包括以下处理。 执行自动聚焦扫描处理以检测半导体晶片上的第一抗蚀剂膜的散焦部分并产生指示所检测到的散焦部分的检测信号。 参照与检测到的散焦部分相关的检测信号,进行第一曝光扫描处理,同时选择性地使第一抗蚀剂膜变暗。
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公开(公告)号:US06610461B2
公开(公告)日:2003-08-26
申请号:US09996558
申请日:2001-11-30
申请人: Hisanori Ueno
发明人: Hisanori Ueno
IPC分类号: G03F700
CPC分类号: G03F7/70625 , G03F7/70633 , G03F9/7076
摘要: In a reticle for transferring a pattern onto a photosensitive layer by a photolithography process, the reticle has a principal pattern and an accessory pattern, and the accessory pattern is divided into a set of continuously arranged sub-patterns.
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公开(公告)号:US06399256B1
公开(公告)日:2002-06-04
申请号:US09453709
申请日:1999-12-03
申请人: Hisanori Ueno
发明人: Hisanori Ueno
IPC分类号: G03F900
CPC分类号: G03F7/70625 , G03F7/70633 , G03F9/7076
摘要: In a reticle for transferring a pattern onto a photosensitive layer by a photolithography process, the reticle has a principal pattern and an accessory pattern, and the accessory pattern is divided into a set of continuously arranged sub-patterns.
摘要翻译: 在通过光刻工艺将图案转印到感光层上的掩模版中,掩模版具有主图案和附件图案,并且附件图案被分成一组连续布置的子图案。
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