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公开(公告)号：US20110279798A1
公开(公告)日：2011-11-17
申请号：US13067139
申请日：2011-05-11
申请人： Masayoshi Danbata , Hisanori Ueno
发明人： Masayoshi Danbata , Hisanori Ueno
IPC分类号： G03B27/34
CPC分类号： G03F7/2051 , G03F7/70066 , G03F7/70525 , G03F9/7011 , G03F9/7026
摘要： An exposure method includes the following processes. An autofocus scan process is performed to detect a defocused portion of a first resist film over a semiconductor wafer and to generate a detection signal that indicates the defocused portion detected. A first exposure scan process is performed while selectively blinding the first resist film, with reference to a detection signal related to the defocused portion detected.
摘要翻译： 曝光方法包括以下处理。 执行自动聚焦扫描处理以检测半导体晶片上的第一抗蚀剂膜的散焦部分并产生指示所检测到的散焦部分的检测信号。 参照与检测到的散焦部分相关的检测信号，进行第一曝光扫描处理，同时选择性地使第一抗蚀剂膜变暗。
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公开(公告)号：US08558990B2
公开(公告)日：2013-10-15
申请号：US13067139
申请日：2011-05-11
申请人： Masayoshi Danbata , Hisanori Ueno
发明人： Masayoshi Danbata , Hisanori Ueno
CPC分类号： G03F7/2051 , G03F7/70066 , G03F7/70525 , G03F9/7011 , G03F9/7026
摘要： An exposure method includes the following processes. An autofocus scan process is performed to detect a defocused portion of a first resist film over a semiconductor wafer and to generate a detection signal that indicates the defocused portion detected. A first exposure scan process is performed while selectively blinding the first resist film, with reference to a detection signal related to the defocused portion detected.
摘要翻译： 曝光方法包括以下处理。 执行自动聚焦扫描处理以检测半导体晶片上的第一抗蚀剂膜的散焦部分并产生指示所检测到的散焦部分的检测信号。 参照与检测到的散焦部分相关的检测信号，进行第一曝光扫描处理，同时选择性地使第一抗蚀剂膜变暗。
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公开(公告)号：US20080218193A1
公开(公告)日：2008-09-11
申请号：US12042195
申请日：2008-03-04
申请人： Masayoshi Danbata
发明人： Masayoshi Danbata
IPC分类号： G01R31/26
CPC分类号： G01R31/305
摘要： In order to provide a semiconductor device evaluation method and a semiconductor device evaluation apparatus for correctly detecting an error position and providing a substrate for observing a cross section without difficulties, a transport unit of a SEM apparatus moves a substrate on a stage. A detection unit detects electric information of observed objects including an error position arranged on the substrate. A calculating unit calculates integrals based on the electric information in at least first and second directions among directions in which arrays of the observed objects are arranged, detects a first waveform obtained by calculating the integral in the first direction and detects a second waveform obtained by calculating the integral in the second direction, wherein the first waveform includes a peak which contains the array of the observed objects including the error position and is larger than at least one of the other peaks, and wherein the second integral-waveform has peaks of substantially the same height. A control unit controls the transport unit so as to move the semiconductor substrate in a direction for maintaining the peak of the first waveform that includes the error position and controls the calculating unit to count the peaks of the second waveform.
摘要翻译： 为了提供半导体器件评估方法和用于正确地检测错误位置并提供用于观察横截面的基板的半导体器件评估装置，SEM装置的传送单元将基板移动到台上。 检测单元检测包括布置在基板上的错误位置的观察对象的电信息。 计算单元基于在观察对象的阵列中布置的方向中的至少第一和第二方向上的电信息来计算积分，检测通过计算第一方向的积分而获得的第一波形，并且检测通过计算获得的第二波形 在第二方向上的积分，其中第一波形包括包含包括误差位置的观察对象的阵列的峰值，并且大于其它峰值中的至少一个峰值，并且其中第二积分波形具有基本上为 相同的高度 控制单元控制传送单元，以使半导体衬底沿包括误差位置的第一波形的峰值的方向移动，并控制计算单元对第二波形的峰值进行计数。
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4.发明授权Silicon wafer and method for manufacture thereof, and method for evaluation of silicon wafer 有权硅晶片及其制造方法以及硅晶片的评价方法公开(公告)号：US06800132B1
公开(公告)日：2004-10-05
申请号：US10049875
申请日：2002-02-12
IPC分类号： C30B1514
摘要： A method for producing a silicon ingot through pulling up a silicon single crystal according to the Czochralski method, wherein the silicon single crystal is pulled up while being doped with nitrogen in such a condition as to form a part having a nitrogen content of 5×1013 atoms/cm3 to 1×1015 atoms/cm3. A silicon wafer having a nitrogen content of 5×1013 atoms/cm3 to 1×1015 atoms/cm3 which is suitable for being treated with heat in a non-oxidizing atmosphere is manufactured of an ingot produced by using the method. The method can be used for producing a silicon wafer being doped with nitrogen and having satisfactory characteristics for use in a semiconductor device.
摘要翻译： 一种通过根据切克劳斯基法提取硅单晶来生产硅锭的方法，其中，在形成氮含量为5×10 13的部分的条件下，将硅单晶在被氮掺杂的同时被拉起 >原子/ cm 3至1×10 15原子/ cm 3。 氮氧含量为5×10 13原子/ cm 3至1×10 15原子/ cm 3的硅晶片，其适用于在非氧化性气氛中用热处理，由 使用方法。 该方法可用于制造掺杂有氮的硅晶片，并具有用于半导体器件的令人满意的特性。
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公开(公告)号：US07147710B2
公开(公告)日：2006-12-12
申请号：US10298740
申请日：2002-11-18
IPC分类号： C30B15/04
摘要： There is described a method which enables stable manufacture of a high-quality, ultra-thin epitaxial silicon wafer, as well as an epitaxial silicon wafer capable of bearing shipment manufactured by the method. A method of manufacturing an epitaxial silicon wafer having an ultra-thin epitaxial film, by means of forming an epitaxial film on a silicon wafer after having annealed the silicon wafer, includes the steps of: sufficiently smoothing COPs formed in the surface of the silicon wafer by means of appropriately setting annealing conditions according to an size of COPs in the vicinity of a surface of the silicon wafer; and forming an epitaxial film through epitaxial growth.
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公开(公告)号：US07495457B2
公开(公告)日：2009-02-24
申请号：US12042195
申请日：2008-03-04
申请人： Masayoshi Danbata
发明人： Masayoshi Danbata
IPC分类号： G01R31/305
CPC分类号： G01R31/305
摘要： In order to provide a semiconductor device evaluation method and a semiconductor device evaluation apparatus for correctly detecting an error position and providing a substrate for observing a cross section without difficulties, a transport unit of a SEM apparatus moves a substrate on a stage. A detection unit detects electric information of observed objects including an error position arranged on the substrate. A calculating unit calculates integrals based on the electric information in at least first and second directions among directions in which arrays of the observed objects are arranged, detects a first waveform obtained by calculating the integral in the first direction and detects a second waveform obtained by calculating the integral in the second direction, wherein the first waveform includes a peak which contains the array of the observed objects including the error position and is larger than at least one of the other peaks, and wherein the second integral-waveform has peaks of substantially the same height. A control unit controls the transport unit so as to move the semiconductor substrate in a direction for maintaining the peak of the first waveform that includes the error position and controls the calculating unit to count the peaks of the second waveform.
摘要翻译： 为了提供半导体器件评估方法和用于正确地检测错误位置并提供用于观察横截面的基板的半导体器件评估装置，SEM装置的传送单元将基板移动到台上。 检测单元检测包括布置在基板上的错误位置的观察对象的电信息。 计算单元基于在观察对象的阵列中布置的方向中的至少第一和第二方向上的电信息来计算积分，检测通过计算第一方向的积分而获得的第一波形，并且检测通过计算获得的第二波形 在第二方向上的积分，其中第一波形包括包含包括误差位置的观察对象的阵列的峰值，并且大于其它峰值中的至少一个峰值，并且其中第二积分波形具有基本上为 相同的高度 控制单元控制传送单元，以使半导体衬底沿包括误差位置的第一波形的峰值的方向移动，并控制计算单元对第二波形的峰值进行计数。
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公开(公告)号：US06217650B1
公开(公告)日：2001-04-17
申请号：US09334118
申请日：1999-06-15
IPC分类号： C30B2502
CPC分类号： C30B29/06 , C30B25/02 , H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/0262 , Y10S117/902
摘要： In an epitaxial-wafer fabricating process for epitaxially growing a silicon layer on the surface of a silicon wafer having the crystal orientation or and an inclination angle of 0°±1° in a reactive gas at a atmosphereicpressure, a growth temperature T is lower than a normal growth temperature by 50° C. to 100° C. during the process of epitaxial growth.
摘要翻译： 在用于在气氛压力下的反应性气体中外延生长具有晶体取向<100>或<111>的晶片方向的硅晶片的表面上的硅层和0°±1°的倾斜角的外延晶片制造方法中， 在外延生长过程中，生长温度T比正常生长温度低50℃至100℃。
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8.发明申请Pure water supply system, and cleaning system and cleaning method using pure water 审中-公开纯净水供水系统，清洁系统和清洁方式使用纯净水公开(公告)号：US20070186960A1
公开(公告)日：2007-08-16
申请号：US11703692
申请日：2007-02-08
申请人： Masayoshi Danbata
发明人： Masayoshi Danbata
CPC分类号： C02F1/20 , C02F1/02 , C02F1/685 , C02F2103/346 , C02F2301/063 , C02F2303/26 , H01L21/6704
摘要： There is provided a system capable of supplying pure water containing almost no dissolved gas and pure water containing dissolved gas without increasing the amount of pure water manufactured in a volume production semiconductor factory. In the present invention, pure water is supplied using a pure water supply system, which includes: a pure water manufacturing means for manufacturing pure water having a dissolved gas concentration of 0.4 ppm or lower; a first pure water supply means capable of supplying the pure water from the pure water manufacturing means; a dissolving means that is coupled to the pure water manufacturing means via a coupling portion and dissolves gas in the pure water transferred from the pure water manufacturing means via the coupling portion; and a second pure water supply means capable of supplying the pure water in which the gas has been dissolved by the dissolving means.
摘要翻译： 提供了能够提供几乎不含溶解气体的纯水和含有溶解气体的纯水的系统，而不增加在批量生产半导体工厂中制造的纯水量。 在本发明中，使用纯水供给系统供给纯水，该纯水供给系统包括：纯水制造装置，用于制造溶解气体浓度为0.4ppm以下的纯水; 能够从纯水制造装置供应纯净水的第一纯水供应装置; 溶解装置，其通过联接部分与纯水制造装置相连，并通过联接部分将纯净水中的纯水中的气体溶解; 以及第二纯水供给装置，其能够通过溶解装置供给已经溶解有气体的纯水。
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公开(公告)号：US20070113778A1
公开(公告)日：2007-05-24
申请号：US11653309
申请日：2007-01-16
IPC分类号： C30B19/00
摘要： A silicon ingot is manufactured by pulling a nitrogen doped silicon single crystal. The oxygen concentration in the crystal is controlled during the pulling, so as to maintain a relationship between the oxygen and nitrogen concentration in the ingot, corresponding to the formula Oi=C1−[C2×(Log Ni)], where C1 and C2 are first and second constants, and Oi is the oxygen concentration and Ni is the nitrogen concentration in the ingot. C1 and C2 will vary depending on the defect criteria. For example, for one criteria C1 may equal to 146.3×1017 and C2 may equal to 9×1017, and Ni may be within the range of approximately 3×1015 to approximately 3×1014 atoms/cm3, while for a stricter defect criteria C1 may equal 127×1017 and C2 may equal 8×1017, and Ni may be within the range proximately 1×1015 to approximately 1×1014 atoms/cm3.
摘要翻译： 通过拉氮掺杂硅单晶制造硅锭。 在拉伸期间控制晶体中的氧浓度，以保持晶锭中氧和氮浓度之间的关系，对应于式O i = C 1 - [C 2x（Log Ni）]，其中C 1和 C 2是第一和第二常数，Oi是氧浓度，Ni是锭中的氮浓度。 C 1和C 2将根据缺陷标准而变化。 例如，对于一个标准，C 1可以等于146.3×10 17，C 2可以等于9×10 17，并且Ni可以在 约3×10 15至约3×10 14原子/ cm 3的范围，而对于更严格的缺陷，C 1可以等于127×10 17 和C 2可以等于8×10 17，并且Ni可以在约1×10 15至约1×10 14原子/ cm 3的范围内 3 。
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