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公开(公告)号:US6084997A
公开(公告)日:2000-07-04
申请号:US102714
申请日:1998-06-22
CPC分类号: G02F1/3132 , G02B6/12007 , G02B2006/12107 , G02B2006/12147 , G02F2201/305
摘要: The coupled waveguide structure comprises first and second rectangular waveguides, disposed closely. The aspect ratio of the first waveguide is substantially inverse in number to that of the second waveguide.
摘要翻译: 耦合波导结构包括紧密配置的第一和第二矩形波导。 第一波导的纵横比基本上与第二波导的纵横比成反比。
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公开(公告)号:US5187717A
公开(公告)日:1993-02-16
申请号:US770170
申请日:1991-10-02
IPC分类号: H01S5/00 , H01S5/042 , H01S5/0625 , H01S5/12
CPC分类号: H01S5/06258 , H01S5/12
摘要: A wavelength-tunable semiconductor laser of distributed feedback (DFB) type wherein a diffraction grating having periodic corrugations along the direction of travel of light is formed on an active layer of at least one of layers adjacent thereto. An electrode on one side is separated into four or more electrodes in the direction of the cavity of the laser. Nonadjoining ones of them are electrically connected to form two electrode groups. The total length of first regions corresponding to a first one of the two electrode groups is larger than the total length of second regions corresponding to the second electrode group. The refractive indexes of the first regions are changed through current injection change to the first electrode group to vary the lasing wavelength and the gain of the second regions is controlled through current injection to the second electrode group, thereby generating output light of a constant output power and a variable single wavelength.
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公开(公告)号:US06327404B1
公开(公告)日:2001-12-04
申请号:US09360616
申请日:1999-07-26
IPC分类号: G02B634
CPC分类号: G02B6/29325 , G02B6/12007
摘要: A diffraction grating is disposed adjacent to a ridge waveguide formed on a substrate (cladding). Assumed that a light propagation direction at the waveguide is z, a direction of width of the waveguide is x, and ends of the diffraction grating of this embodiment is x=gmin when z=0 and x=gmax when z=L/2, the ends of the diffraction grating can be expressed as the following functions f(z). Namely, f(Z)=gmin+(gmax−gmin)×(2z/L)n when 0≦z≦L/2, and f(Z)=gmin+(gmax−gmin)×(2-2z/L)n when L/2≦z≦L, where n>1.
摘要翻译: 衍射光栅与形成在基板(包层)上的脊形波导相邻设置。 假设波导的光传播方向为z,波导宽度方向为x,当z = 0时,本实施方式的衍射光栅的端部为x = gmin,z = L / 2时x = gmax, 衍射光栅的端部可以表示为以下函数f(z)。 即,和
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公开(公告)号:US5859941A
公开(公告)日:1999-01-12
申请号:US760491
申请日:1996-12-05
CPC分类号: H04Q11/0003 , G02B6/12007 , G02B6/29334 , G02B6/29383 , G02F1/3132 , G02B2006/12107 , G02B2006/12147 , G02B2006/12164 , G02F1/0147 , G02F2001/3135 , G02F2203/055
摘要: An optical add/drop multiplexer device which is capable of extracting or inserting optical signals of arbitrary wavelength and having a wavelength selection characteristic with a narrow bandwidth, and which is compact in size and highly reliable. The device is formed by a substrate member; a plurality of optical waveguides, formed over the substrate member in layers with a prescribed interval along a direction perpendicular to a plane of the substrate member, each optical waveguide having a portion arranged in parallel and in proximity to an adjacent optical waveguide to form a coupling section; and a diffraction grating member, provided at the coupling section and having a prescribed period along a light propagation direction, for reflecting light signals with a specific wavelength among light signals entered from one of adjacent optical waveguides to another one of the adjacent optical waveguides.
摘要翻译: 一种能够提取或插入任意波长的光信号并具有窄带宽的波长选择特性并且尺寸紧凑和高度可靠的光分插复用器装置。 该装置由衬底构件形成; 多个光波导,沿着与基板构件的平面垂直的方向以规定的间隔在基板构件上方形成,每个光波导具有平行布置并邻近相邻光波导的部分,以形成耦合 部分; 以及衍射光栅构件,设置在耦合部分并且具有沿着光传播方向的规定周期,用于将从相邻光波导中的相邻光波导输入的光信号中的特定波长的光信号反射到相邻光波导中的另一个。
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公开(公告)号:US5145796A
公开(公告)日:1992-09-08
申请号:US749558
申请日:1991-08-26
申请人: Alberto Adan , Masayoshi Horita
发明人: Alberto Adan , Masayoshi Horita
IPC分类号: H01L21/336 , H01L21/76 , H01L21/762 , H01L21/763 , H01L21/8238 , H01L21/84 , H01L27/092 , H01L27/12 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/78 , H01L29/786
CPC分类号: H01L29/66772 , H01L21/76224 , H01L21/76264 , H01L21/763 , H01L21/8238 , H01L21/84 , H01L29/78648 , H01L21/76283 , H01L21/76289 , H01L27/1203 , Y10S148/053 , Y10S148/15
摘要: A method for manufacturing a semiconductor apparatus, providing steps of (i) laminating a first polysilicon layer on the whole surface of a semiconductor substrate through a first oxide layer, (ii) removing the first polysilicon layer and first oxide layer in an element separation region so as to form a trench therein and to treat the residual first polysilicon layer and first oxide layer as a bottom gate electrode and an insulating film respectively, (iii) forming a monocrystalline silicon layer by epitaxial growth on the whole surface of the semiconductor substrate including the trenches, (iv) removing the monocrystalline silicon layer in the element separation region, laminating a second oxide layer on the whole surface of the semiconductor substrate including the removing portion, and making the second oxide layer remain as an element separation film in only the element separation region, and (v) forming a gate oxide film and a top gate electrode on the residual monocrystalline silicon film, and forming a source/drain region on the residual monocrystalline silicon film.
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