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39 条记录 (耗时 0.021 秒)

    Tunable semiconductor laser
    2.
    发明授权
    Tunable semiconductor laser 失效
    TUNNABLE SEMICONDUCTOR激光

    公开(公告)号：US5187717A

    公开(公告)日：1993-02-16

    申请号：US770170

    申请日：1991-10-02

    申请人： Masayoshi Horita ,  Katsuyuki Utaka ,  Yuichi Matsushima

    发明人： Masayoshi Horita ,  Katsuyuki Utaka ,  Yuichi Matsushima

    IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/0625 ,  H01S5/12

    CPC分类号： H01S5/06258 ,  H01S5/12

    摘要： A wavelength-tunable semiconductor laser of distributed feedback (DFB) type wherein a diffraction grating having periodic corrugations along the direction of travel of light is formed on an active layer of at least one of layers adjacent thereto. An electrode on one side is separated into four or more electrodes in the direction of the cavity of the laser. Nonadjoining ones of them are electrically connected to form two electrode groups. The total length of first regions corresponding to a first one of the two electrode groups is larger than the total length of second regions corresponding to the second electrode group. The refractive indexes of the first regions are changed through current injection change to the first electrode group to vary the lasing wavelength and the gain of the second regions is controlled through current injection to the second electrode group, thereby generating output light of a constant output power and a variable single wavelength.

    Wavelength tunable semiconductor laser with narrow band-pass active filter region
    3.
    发明授权
    Wavelength tunable semiconductor laser with narrow band-pass active filter region 失效
    具有窄带通有源滤波器区域的波长可调谐半导体激光器

    公开(公告)号：US4852108A

    公开(公告)日：1989-07-25

    申请号：US216397

    申请日：1988-07-07

    申请人： Katsuyuki Utaka ,  Kazuo Sakai ,  Yuichi Matsushima

    发明人： Katsuyuki Utaka ,  Kazuo Sakai ,  Yuichi Matsushima

    IPC分类号： H01S5/00 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/12 ,  H01S5/14

    CPC分类号： H01S5/06258 ,  H01S5/10 ,  H01S5/1025 ,  H01S5/12 ,  H01S5/14 ,  Y10S372/704

    摘要： A semiconductor laser is disclosed in which a light emitting region having a light emitting layer and a waveguide region having a waveguide layer which is coupled to at least one side of the light emitting layer with a high efficiency are integrated on the same substrate; the light emitting region includes an active filter section having a diffraction grating equipped with a band-pass filter function; the light emitting region and the waveguide region are electrically isolated and are each provided with an electrode; and the oscillation wavelength of the semiconductor lase is changed by changing the refractive indices of at least the waveguide region and the active filter section through voltage application or current injection to the electrodes, thereby producing a narrow-linewidth, single-wavelength oscillation output light of a wavelength which corresponds to the transmission wavelength of the active filter section determined by the preset refractive indices of the waveguide region and the active filter section.

    Multi-layered semi-conductor photodetector
    5.
    发明授权
    Multi-layered semi-conductor photodetector 失效
    多层半导体光电探测器

    公开(公告)号：US4682196A

    公开(公告)日：1987-07-21

    申请号：US806746

    申请日：1985-12-09

    申请人： Kazuo Sakai ,  Yuichi Matsushima ,  Shigeyuki Akiba ,  Katsuyuki Utaka

    发明人： Kazuo Sakai ,  Yuichi Matsushima ,  Shigeyuki Akiba ,  Katsuyuki Utaka

    IPC分类号： H01L29/205 ,  H01L31/0352 ,  H01L31/11 ,  H01L27/14 ,  H01L29/12

    CPC分类号： H01L29/205 ,  H01L31/035281 ,  H01L31/11 ,  Y02E10/50

    摘要： A semiconductor device, which is formed by a sequential lamination of a first semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3, a second semiconductor layer having a carrier concentration less than 10.sup.16 cm.sup.-3, a third semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3 and a thickness less than 300 .ANG., a fourth semiconductor layer having a carrier concentration less than 10.sup.16 cm.sup.-3, and a fifth semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3 and, in which the first and fifth semiconductor layers are the same in conductivity type and the third semiconductor layer is different in conductivity type from the fifth semiconductor layer. In accordance with the present invention, the energy gap of the third semiconductor layer is larger than the energy gaps of the second and fourth semiconductor layers. An annular region of a semi-insulating material or of the same conductivity type as that of the third semiconductor layer may be formed around an active region to extend from the fifth semiconductor layer to the second semiconductor layer.

    摘要翻译： 一种半导体器件，其通过顺次层叠具有载流子浓度大于1017cm -3的第一半导体层，载流子浓度小于1016cm-3的第二半导体层，具有载流子浓度的第三半导体层 大于1017cm-3，厚度小于300，载流子浓度小于1016cm-3的第四半导体层和载流子浓度大于1017cm-3的第五半导体层，其中第一 并且第五半导体层的导电类型相同，并且第三半导体层的导电类型与第五半导体层不同。 根据本发明，第三半导体层的能隙大于第二和第四半导体层的能隙。 可以在有源区周围形成半绝缘材料或与第三半导体层相同的导电类型的环形区域，以从第五半导体层延伸到第二半导体层。

    Method for manufacturing diffraction grating
    6.
    发明授权
    Method for manufacturing diffraction grating 失效
    衍射光栅的制造方法

    公开(公告)号：US4660934A

    公开(公告)日：1987-04-28

    申请号：US710984

    申请日：1985-03-12

    申请人： Shigeyuki Akiba ,  Katsuyuki Utaka ,  Kazuo Sakai ,  Yuichi Matsushima

    发明人： Shigeyuki Akiba ,  Katsuyuki Utaka ,  Kazuo Sakai ,  Yuichi Matsushima

    IPC分类号： G02B5/18 ,  G03F7/00 ,  G03F7/095

    CPC分类号： G03F7/095 ,  G02B5/1857 ,  G03F7/001 ,  Y10S359/90

    摘要： A method for manufacturing diffraction grating, in which after forming, on a substrate, one of a negative type photoresist film (an N film) and a positive type photoresist film (a P film) to cover a first region A and the other of the negative type photoresist film and the positive type photoresist film, or the latter film on the former one to cover a second region B, the first region and the second region are subjected to two-beam interference exposure, thereby forming a diffraction grating in which corrugations in the first region and the second region are reverse in phase to each other, through utilization of characteristics of the negative type photoresist film and the positive type photoresist film. Another feature of the present invention resides in that after forming, on a substrate, a structure in which a negative type photoresist film (an N film) is formed to cover only a first region A and the negative type photoresist film is formed on a positive type photoresist film (a P film) to cover a second region B, the first region and the second region of the substrate are subjected to two-beam interference exposure, thereby forming a diffraction grating in which corrugations in the first region and the second region are reverse in phase to each other, through utilization of characteristics of the negative type photoresist film and the positive type photoresist film.

    摘要翻译： 制造衍射光栅的方法，其中在基板上形成负型光致抗蚀剂膜（N膜）和正型光致抗蚀剂膜（P膜）之一以覆盖第一区域A和另一个 负型光致抗蚀剂膜和正型光致抗蚀剂膜，或者在前者的后者膜覆盖第二区域B，第一区域和第二区域受到双光束干涉曝光，从而形成衍射光栅，其中波纹 通过利用负型光致抗蚀剂膜和正型光致抗蚀剂膜的特性，在第一区域和第二区域中的相位彼此相反。 本发明的另一个特征在于，在基板上形成后，形成负型光致抗蚀剂膜（N膜）仅覆盖第一区域A并且负型光致抗蚀剂膜形成为阳性的结构 （P膜）覆盖第二区域B，对基板的第一区域和第二区域进行双光束干涉曝光，从而形成衍射光栅，其中第一区域和第二区域中的波纹 通过利用负型光致抗蚀剂膜和正型光致抗蚀剂膜的特性，彼此相反。

    Method for manufacturing diffraction grating
    8.
    发明授权
    Method for manufacturing diffraction grating 失效
    衍射光栅的制造方法

    公开(公告)号：US4826291A

    公开(公告)日：1989-05-02

    申请号：US882588

    申请日：1986-07-07

    申请人： Katsuyuki Utaka ,  Shigeyuki Akiba ,  Yuichi Matsushima

    发明人： Katsuyuki Utaka ,  Shigeyuki Akiba ,  Yuichi Matsushima

    IPC分类号： G02B5/18 ,  G03F7/00 ,  G02B5/32

    CPC分类号： G03F7/001 ,  G02B5/1857 ,  Y10S359/90

    摘要： A method is disclosed for manufacturing a diffraction grating formed by corrugations reversed in phase between a first region and a second region through use of two kinds of photoresists of opposite photosensitive characteristics. An isolation film is introduced for preventing the photoresists from getting mixed with each other, permitting the combined use of any photoresists. A step may be further included in which the isolation film is deposited on one of two kinds of photoresist films in at least one of a first region and a second region, is subjected to two-beam interference exposure, is removed and then a degraded layer, which is formed in the surface of the above said one kind of photoresist film during the deposition of the isolation film, is removed.

    摘要翻译： 公开了一种用于制造通过使用具有相反感光特性的两种光致抗蚀剂在第一区域和第二区域之间相位相反的波纹形成的衍射光栅的方法。 引入隔离膜以防止光致抗蚀剂彼此混合，允许组合使用任何光致抗蚀剂。 可以进一步包括步骤，其中隔离膜沉积在第一区域和第二区域中的至少一个中的两种光致抗蚀剂膜中的一种上经受双光束干涉曝光，然后去除劣化层 ，在隔离膜沉积期间形成在上述一种光致抗蚀剂膜的表面上。

    Semiconductor optical switch
    9.
    发明授权
    Semiconductor optical switch 失效
    半导体光开关

    公开(公告)号：US4795225A

    公开(公告)日：1989-01-03

    申请号：US143816

    申请日：1988-01-13

    申请人： Kazuo Sakai ,  Yuichi Matsushima ,  Katsuyuki Utaka

    发明人： Kazuo Sakai ,  Yuichi Matsushima ,  Katsuyuki Utaka

    IPC分类号： G02F1/015 ,  G02F1/017 ,  G02F1/025 ,  G02F1/313

    CPC分类号： B82Y20/00 ,  G02F1/01708 ,  G02F1/3138 ,  G02F2001/0152

    摘要： An optical switch is disclosed in which a switching section for switching the optical path of an incident light is formed in a region where two semiconductor optical waveguides cross each other. The switching section is composed of n-, i-, p-, i- and n-type semiconductor layers laminated in that order, each i-type layer being formed by a superlattice layer composed of a plurality of semiconductor thin films so that the i-type layer is higher in the effective refractive index and smaller in the effective energy gap than each n-type layer. The impurity concentrations of the n-, i-, p-, i-, and n-type layers and the thicknesses of the i-, p-, and i-type layers are determined so that the i-, p- and i-type layers are depleted in a thermal equilibrium state.