PLASMA PROCESSING APPARATUS
    1.
    发明申请
    PLASMA PROCESSING APPARATUS 有权
    等离子体加工设备

    公开(公告)号:US20100294656A1

    公开(公告)日:2010-11-25

    申请号:US12814979

    申请日:2010-06-14

    IPC分类号: C23C14/34

    摘要: A plasma apparatus includes: a chamber which can be evacuated into vacuum; first electrode disposed within the chamber; a magnet mechanism having a magnet provided apart from and above the first electrode; a second electrode provided facing the first electrode; and a magnetic shield member provided in at least one of gaps between the first electrode and the magnet mechanism and between the first electrode and the second electrode.

    摘要翻译: 一种等离子体装置包括:可以抽真空的腔室; 设置在所述室内的第一电极; 磁体机构,其具有设置在所述第一电极之上和之上的磁体; 面向所述第一电极设置的第二电极; 以及磁屏蔽构件,设置在所述第一电极和所述磁体机构之间以及所述第一电极和所述第二电极之间的至少一个间隙中。

    Plasma processing apparatus
    2.
    发明授权
    Plasma processing apparatus 有权
    等离子体处理装置

    公开(公告)号:US08778151B2

    公开(公告)日:2014-07-15

    申请号:US12814979

    申请日:2010-06-14

    摘要: A plasma apparatus includes: a chamber which can be evacuated into vacuum; first electrode disposed within the chamber; a magnet mechanism having a magnet provided apart from and above the first electrode; a second electrode provided facing the first electrode; and a magnetic shield member provided in at least one of gaps between the first electrode and the magnet mechanism and between the first electrode and the second electrode.

    摘要翻译: 一种等离子体装置包括:可以抽真空的腔室; 设置在所述室内的第一电极; 磁体机构,其具有设置在所述第一电极之上和之上的磁体; 面向所述第一电极设置的第二电极; 以及磁屏蔽构件,设置在所述第一电极和所述磁体机构之间以及所述第一电极和所述第二电极之间的至少一个间隙中。