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    Method and system for performing a chemical oxide removal process
    1.
    发明授权
    Method and system for performing a chemical oxide removal process 有权
    用于进行化学氧化物去除工艺的方法和系统

    公开(公告)号：US08175736B2

    公开(公告)日：2012-05-08

    申请号：US12964531

    申请日：2010-12-09

    申请人： Masayuki Tomoyasu ,  Merritt Funk ,  Kevin A. Pinto ,  Masaya Odagiri ,  Lemuel Chen ,  Asao Yamashita ,  Akira Iwami ,  Hiroyuki Takahashi

    发明人： Masayuki Tomoyasu ,  Merritt Funk ,  Kevin A. Pinto ,  Masaya Odagiri ,  Lemuel Chen ,  Asao Yamashita ,  Akira Iwami ,  Hiroyuki Takahashi

    IPC分类号： G06F19/00 ,  H01L21/302

    CPC分类号： H01L21/67253 ,  C23C16/4405 ,  C25D11/02 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67155 ,  H01L21/67207 ,  H01L21/67248 ,  H01L22/20

    摘要： A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.

    摘要翻译： 提出了一种用于化学氧化物去除（COR）的处理系统和方法，其中处理系统包括第一处理室和第二处理室，其中第一和第二处理室彼此耦合。 第一处理室包括提供温度控制室的化学处理室和用于支撑用于化学处理的基板的独立温度控制的基板保持器。 在包括表面温度和气体压力的受控条件下，将基底暴露于气态化学物质，例如HF / NH 3。 第二处理室包括热处理室，其提供与化学处理室热绝缘的温度控制室。 热处理室提供用于控制基板的温度以热处理基板上化学处理的表面的基板保持器。

    METHOD AND SYSTEM FOR PERFORMING A CHEMICAL OXIDE REMOVAL PROCESS
    2.
    发明申请
    METHOD AND SYSTEM FOR PERFORMING A CHEMICAL OXIDE REMOVAL PROCESS 有权
    用于执行化学氧化物去除方法的方法和系统

    公开(公告)号：US20110307089A1

    公开(公告)日：2011-12-15

    申请号：US12964531

    申请日：2010-12-09

    申请人： Masayuki TOMOYASU ,  Merritt Lane Funk ,  Kevin Augustine Pinto ,  Masaya Odagiri ,  Lemuel Chen ,  Asao Yamashita ,  Akira Iwami ,  Hiroyuki Takahashi

    发明人： Masayuki TOMOYASU ,  Merritt Lane Funk ,  Kevin Augustine Pinto ,  Masaya Odagiri ,  Lemuel Chen ,  Asao Yamashita ,  Akira Iwami ,  Hiroyuki Takahashi

    IPC分类号： G06F17/00

    CPC分类号： H01L21/67253 ,  C23C16/4405 ,  C25D11/02 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67155 ,  H01L21/67207 ,  H01L21/67248 ,  H01L22/20

    摘要： A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.

    摘要翻译： 提出了一种用于化学氧化物去除（COR）的处理系统和方法，其中处理系统包括第一处理室和第二处理室，其中第一和第二处理室彼此耦合。 第一处理室包括提供温度控制室的化学处理室和用于支撑用于化学处理的基板的独立温度控制的基板保持器。 在包括表面温度和气体压力的受控条件下，将基底暴露于气态化学物质，例如HF / NH 3。 第二处理室包括热处理室，其提供与化学处理室热绝缘的温度控制室。 热处理室提供用于控制基板的温度以热处理基板上化学处理的表面的基板保持器。