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公开(公告)号：US08175736B2
公开(公告)日：2012-05-08
申请号：US12964531
申请日：2010-12-09
申请人： Masayuki Tomoyasu , Merritt Funk , Kevin A. Pinto , Masaya Odagiri , Lemuel Chen , Asao Yamashita , Akira Iwami , Hiroyuki Takahashi
发明人： Masayuki Tomoyasu , Merritt Funk , Kevin A. Pinto , Masaya Odagiri , Lemuel Chen , Asao Yamashita , Akira Iwami , Hiroyuki Takahashi
IPC分类号： G06F19/00 , H01L21/302
CPC分类号： H01L21/67253 , C23C16/4405 , C25D11/02 , H01L21/0337 , H01L21/31116 , H01L21/67069 , H01L21/67155 , H01L21/67207 , H01L21/67248 , H01L22/20
摘要： A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.
摘要翻译： 提出了一种用于化学氧化物去除（COR）的处理系统和方法，其中处理系统包括第一处理室和第二处理室，其中第一和第二处理室彼此耦合。 第一处理室包括提供温度控制室的化学处理室和用于支撑用于化学处理的基板的独立温度控制的基板保持器。 在包括表面温度和气体压力的受控条件下，将基底暴露于气态化学物质，例如HF / NH 3。 第二处理室包括热处理室，其提供与化学处理室热绝缘的温度控制室。 热处理室提供用于控制基板的温度以热处理基板上化学处理的表面的基板保持器。
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2.发明授权Using Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models for metal-gate structures 有权使用金属栅结构的多层/多输入/多输出（MLMIMO）模型公开(公告)号：US07894927B2
公开(公告)日：2011-02-22
申请号：US12186619
申请日：2008-08-06
CPC分类号： H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a method of processing a wafer using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more measurement procedures, one or more Poly-Etch (P-E) sequences, and one or more metal-gate etch sequences. The MLMIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple process steps. The multiple layers and/or the multiple process steps can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using isotropic and/or anisotropic etch processes.
摘要翻译： 本发明提供了一种使用多层处理序列和多层/多输入/多输出（MLMIMO）模型以及可以包括一个或多个测量程序，一个或多个聚蚀刻（PE）序列 ，以及一个或多个金属栅极蚀刻序列。 MLMIMO过程控制使用多个层和/或多个过程步骤之间的动态交互行为建模。 多层和/或多个工艺步骤可以与可以使用各向同性和/或各向异性蚀刻工艺产生的线，沟槽，通孔，间隔物，接触和栅极结构的产生相关联。
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3.发明申请Using Multi-Layer/Multi-Input/Multi-Output (MLMIMO) Models for Metal-Gate Structures 有权使用金属门结构的多层/多输入/多输出（MLMIMO）模型公开(公告)号：US20100036518A1
公开(公告)日：2010-02-11
申请号：US12186619
申请日：2008-08-06
IPC分类号： G06F19/00
CPC分类号： H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a method of processing a wafer using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more measurement procedures, one or more Poly-Etch (P-E) sequences, and one or more metal-gate etch sequences. The MLMIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple process steps. The multiple layers and/or the multiple process steps can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using isotropic and/or anisotropic etch processes.
摘要翻译： 本发明提供了一种使用多层处理序列和多层/多输入/多输出（MLMIMO）模型以及可以包括一个或多个测量程序，一个或多个聚 - 蚀刻（PE）序列 ，以及一个或多个金属栅极蚀刻序列。 MLMIMO过程控制使用多层和/或多个过程步骤之间的动态交互行为建模。 多层和/或多个工艺步骤可以与可以使用各向同性和/或各向异性蚀刻工艺产生的线，沟槽，通孔，间隔物，接触和栅极结构的产生相关联。
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公开(公告)号：US07292906B2
公开(公告)日：2007-11-06
申请号：US10890410
申请日：2004-07-14
IPC分类号： G06F19/00 , H01L21/302
CPC分类号： H01L22/20 , H01L21/67248 , H01L21/67253 , H01L2924/0002 , H01L2924/00
摘要： A processing method of processing a substrate is presented that includes: receiving pre-process data, wherein the pre-process data comprises a desired process result and actual measured data for the substrate; determining a required process result, wherein the required process result comprises the difference between the desired process result and the actual measured data; creating a new process recipe by modifying a nominal recipe obtained from a processing tool using at least one of a static recipe and a formula model, wherein the new process recipe provides a new process result that is approximately equal to the required process result; and sending the new process recipe to the processing tool and the substrate.
摘要翻译： 提出了一种处理衬底的处理方法，包括：接收预处理数据，其中预处理数据包括所需的处理结果和衬底的实际测量数据; 确定所需的处理结果，其中所需的处理结果包括期望的处理结果与实际测量数据之间的差异; 通过使用静态配方和公式模型中的至少一个修改从处理工具获得的名义配方来创建新的过程配方，其中新的过程配方提供近似等于所需过程结果的新的过程结果; 并将新的工艺配方发送到处理工具和衬底。
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公开(公告)号：US20060195218A1
公开(公告)日：2006-08-31
申请号：US11046903
申请日：2005-02-01
申请人： Asao Yamashita , Merritt Funk , Daniel Prager
发明人： Asao Yamashita , Merritt Funk , Daniel Prager
IPC分类号： G06F19/00
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： This method includes a method for etch processing that allows the bias between isolated and nested structures/features to be adjusted, correcting for a process wherein the isolated structures/features need to be smaller than the nested structures/features and wherein the nested structures/features need to be reduced relative to the isolated structures/features, while allowing for the critical control of trimming.
摘要翻译： 该方法包括用于蚀刻处理的方法，其允许调整隔离结构/嵌套结构/特征之间的偏置，校正其中隔离结构/特征需要小于嵌套结构/特征的过程，并且其中嵌套结构/特征 需要相对于孤立的结构/特征而减少，同时允许对修剪的关键控制。
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6.发明申请Creating Metal Gate Structures Using Lithography-Etch-Lithography-Etch (LELE) Processing Sequences 有权使用光刻蚀刻蚀刻蚀刻（LELE）处理序列创建金属栅极结构公开(公告)号：US20100214545A1
公开(公告)日：2010-08-26
申请号：US12391410
申请日：2009-02-24
CPC分类号： G03B27/42 , G03F7/70466
摘要： The invention can provide apparatus and methods of creating metal gate structures on wafers in real-time using Lithography-Etch-Lithography-Etch (LELE) processing sequence. Real-time data and/or historical data associated with LELE processing sequences can be fed forward and/or fed back as fixed variables or constrained variables in internal-Integrated-Metrology modules (i-IMM) to improve the accuracy of the metal gate structures.
摘要翻译： 本发明可以提供使用光刻蚀刻光刻蚀刻（LELE）处理序列实时地在晶片上形成金属栅极结构的设备和方法。 与LELE处理序列相关联的实时数据和/或历史数据可以作为内部集成计量模块（i-IMM）中的固定变量或约束变量进行向前馈送和/或反馈，以提高金属门结构的精度 。
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7.发明申请Creating Multi-Layer/Multi-Input/Multi-Output (MLMIMO) Models for Metal-Gate Structures 有权为金属门结构创建多层/多输入/多输出（MLMIMO）模型公开(公告)号：US20100036514A1
公开(公告)日：2010-02-11
申请号：US12186668
申请日：2008-08-06
IPC分类号： G06F19/00
CPC分类号： G05B17/02 , Y10S438/924
摘要： The invention provides a method of processing a wafer using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more measurement procedures, one or more Poly-Etch (P-E) sequences, and one or more metal-gate etch sequences. The MLMIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple process steps. The multiple layers and/or the multiple process steps can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using isotropic and/or anisotropic etch processes.
摘要翻译： 本发明提供了一种使用多层处理序列和多层/多输入/多输出（MLMIMO）模型以及可以包括一个或多个测量程序，一个或多个聚蚀刻（PE）序列 ，以及一个或多个金属栅极蚀刻序列。 MLMIMO过程控制使用多层和/或多个过程步骤之间的动态交互行为建模。 多层和/或多个工艺步骤可以与可以使用各向同性和/或各向异性蚀刻工艺产生的线，沟槽，通孔，间隔物，接触和栅极结构的产生相关联。
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公开(公告)号：US20090081815A1
公开(公告)日：2009-03-26
申请号：US11859507
申请日：2007-09-21
申请人： Asao Yamashita , Merritt Funk , Daniel J. Prager , Lee Chen , Radha Sundararajan
发明人： Asao Yamashita , Merritt Funk , Daniel J. Prager , Lee Chen , Radha Sundararajan
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32422 , H01L22/12 , H01L29/6656 , H01L29/66575 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： The invention can provide a method of processing a substrate using S-O processing sequences and evaluation libraries that can include one or more optimized spacer creation and evaluation procedures.
摘要翻译： 本发明可以提供使用S-O处理序列处理衬底的方法以及可以包括一个或多个优化的间隔物产生和评估程序的评估库。
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公开(公告)号：US07328418B2
公开(公告)日：2008-02-05
申请号：US11046903
申请日：2005-02-01
申请人： Asao Yamashita , Merritt Funk , Daniel Prager
发明人： Asao Yamashita , Merritt Funk , Daniel Prager
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： This method includes a method for etch processing that allows the bias between isolated and nested structures/features to be adjusted, correcting for a process wherein the isolated structures/features need to be smaller than the nested structures/features and wherein the nested structures/features need to be reduced relative to the isolated structures/features, while allowing for the critical control of trimming.
摘要翻译： 该方法包括用于蚀刻处理的方法，其允许调整隔离结构/嵌套结构/特征之间的偏置，校正其中隔离结构/特征需要小于嵌套结构/特征的过程，并且其中嵌套结构/特征 需要相对于孤立的结构/特征而减少，同时允许对修剪的关键控制。
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10.发明授权Creating metal gate structures using Lithography-Etch-Lithography-Etch (LELE) processing sequences 有权使用光刻蚀刻 - 刻蚀 - 蚀刻（LELE）处理序列创建金属栅极结构公开(公告)号：US08183062B2
公开(公告)日：2012-05-22
申请号：US12391410
申请日：2009-02-24
IPC分类号： H01L21/66
CPC分类号： G03B27/42 , G03F7/70466
摘要： The invention can provide apparatus and methods of creating metal gate structures on wafers in real-time using Lithography-Etch-Lithography-Etch (LELE) processing sequence. Real-time data and/or historical data associated with LELE processing sequences can be fed forward and/or fed back as fixed variables or constrained variables in internal-Integrated-Metrology modules (i-IMM) to improve the accuracy of the metal gate structures.
摘要翻译： 本发明可以提供使用光刻蚀刻光刻蚀刻（LELE）处理序列实时地在晶片上形成金属栅极结构的设备和方法。 与LELE处理序列相关联的实时数据和/或历史数据可以作为内部集成计量模块（i-IMM）中的固定变量或约束变量进行向前馈送和/或反馈，以提高金属门结构的精度 。
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