公开(公告)号：US20080254601A1

公开(公告)日：2008-10-16

申请号：US12060528

申请日：2008-04-01

申请人： Mason Terry ,  Malcolm Abbott ,  Maxim Kelman ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Eric Schiff

发明人： Mason Terry ,  Malcolm Abbott ,  Maxim Kelman ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Eric Schiff

IPC分类号： H01L21/208

CPC分类号： H01L21/02667 ,  H01L21/02524 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628

摘要： A method for producing a Group IV semiconductor thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber, wherein the chamber further has a chamber pressure. The method further includes depositing a nanoparticle ink on the substrate, the nanoparticle ink including set of Group IV semiconductor nanoparticles and a solvent, wherein each nanoparticle of the set of Group IV semiconductor nanoparticles includes a nanoparticle surface, wherein a layer of Group IV semiconductor nanoparticles is formed. The method also includes striking a hydrogen plasma; and heating the layer of Group IV semiconductor nanoparticles to a fabrication temperature of between about 300° C. and about 1350° C., and between about 1 nanosecond and about 10 minutes; wherein the Group IV semiconductor thin film is formed.

摘要翻译： 公开了一种用于在腔室中制造IV族半导体薄膜的方法。 该方法包括将衬底定位在腔室中，其中腔室还具有腔室压力。 该方法还包括在衬底上沉积纳米颗粒油墨，所述纳米颗粒油墨包括IV族半导体纳米颗粒和溶剂组，其中该组IV半导体纳米颗粒的每个纳米颗粒包括纳米颗粒表面，其中第IV族半导体纳米颗粒 形成了。 该方法还包括冲击氢等离子体; 以及将所述IV族半导体纳米颗粒层加热至约300℃至约1350℃，约1纳秒至约10分钟之间的制备温度; 其中形成IV族半导体薄膜。

公开(公告)号：US07572740B2

公开(公告)日：2009-08-11

申请号：US12060528

申请日：2008-04-01

申请人： Mason Terry ,  Malcolm Abbott ,  Maxim Kelman ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Eric Schiff

发明人： Mason Terry ,  Malcolm Abbott ,  Maxim Kelman ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Eric Schiff

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02667 ,  H01L21/02524 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628

摘要： A method for producing a Group IV semiconductor thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber, wherein the chamber further has a chamber pressure. The method further includes depositing a nanoparticle ink on the substrate, the nanoparticle ink including set of Group IV semiconductor nanoparticles and a solvent, wherein each nanoparticle of the set of Group IV semiconductor nanoparticles includes a nanoparticle surface, wherein a layer of Group IV semiconductor nanoparticles is formed. The method also includes striking a hydrogen plasma; and heating the layer of Group IV semiconductor nanoparticles to a fabrication temperature of between about 300° C. and about 1350° C., and between about 1 nanosecond and about 10 minutes; wherein the Group IV semiconductor thin film is formed.

摘要翻译： 公开了一种用于在腔室中制造IV族半导体薄膜的方法。 该方法包括将衬底定位在腔室中，其中腔室还具有腔室压力。 该方法还包括在衬底上沉积纳米颗粒油墨，所述纳米颗粒油墨包括IV族半导体纳米颗粒和溶剂组，其中该组IV半导体纳米颗粒的每个纳米颗粒包括纳米颗粒表面，其中第IV族半导体纳米颗粒 形成了。 该方法还包括冲击氢等离子体; 以及将所述IV族半导体纳米颗粒层加热至约300℃至约1350℃，约1纳秒至约10分钟之间的制备温度; 其中形成IV族半导体薄膜。

公开(公告)号：US20120009721A1

公开(公告)日：2012-01-12

申请号：US13239806

申请日：2011-09-22

申请人： Malcolm Abbott ,  Maxim Kelman ,  Francesco Lemmi ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Mason Terry ,  Karel Vanheusden

发明人： Malcolm Abbott ,  Maxim Kelman ,  Francesco Lemmi ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Mason Terry ,  Karel Vanheusden

IPC分类号： H01L31/18

CPC分类号： H01L31/0352 ,  H01L31/056 ,  H01L31/061 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： A device for generating electricity from solar radiation is disclosed. The device includes a wafer doped with a first dopant, the wafer including a front-side and a back-side, wherein the front-side is configured to be exposed to the solar radiation. The device also includes a fused Group IV nanoparticle thin film deposited on the front-side, wherein the nanoparticle thin film includes a second dopant, wherein the second dopant is a counter dopant. The device further includes a first electrode deposited on the nanoparticle thin film, and a second electrode deposited on the back-side, wherein when solar radiation is applied to the front-side, an electrical current is produced.

摘要翻译： 公开了一种用于从太阳辐射发电的装置。 该器件包括掺杂有第一掺杂剂的晶片，晶片包括前侧和后侧，其中前侧被配置为暴露于太阳辐射。 该装置还包括沉积在前侧的融合的IV族纳米颗粒薄膜，其中所述纳米颗粒薄膜包括第二掺杂剂，其中所述第二掺杂剂是反掺杂剂。 该装置还包括沉积在纳米颗粒薄膜上的第一电极和沉积在背面的第二电极，其中当向前侧施加太阳辐射时，产生电流。

公开(公告)号：US20100275982A1

公开(公告)日：2010-11-04

申请号：US12029838

申请日：2008-02-12

申请人： Malcolm Abbott ,  Maxim Kelman ,  Francesco Lemmi ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Mason Terry ,  Karel Vanheusden

发明人： Malcolm Abbott ,  Maxim Kelman ,  Francesco Lemmi ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Mason Terry ,  Karel Vanheusden

IPC分类号： H01L31/0352

CPC分类号： H01L31/0352 ,  H01L31/056 ,  H01L31/061 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： A device for generating electricity from solar radiation is disclosed. The device includes a wafer doped with a first dopant, the wafer including a front-side and a back-side, wherein the front-side is configured to be exposed to the solar radiation. The device also includes a fused Group IV nanoparticle thin film deposited on the front-side, wherein the nanoparticle thin film includes a second dopant, wherein the second dopant is a counter dopant. The device further includes a first electrode deposited on the nanoparticle thin film, and a second electrode deposited on the back-side, wherein when solar radiation is applied to the front-side, an electrical current is produced.

摘要翻译： 公开了一种用于从太阳辐射发电的装置。 该器件包括掺杂有第一掺杂剂的晶片，晶片包括前侧和后侧，其中前侧被配置为暴露于太阳辐射。 该装置还包括沉积在前侧的融合的IV族纳米颗粒薄膜，其中所述纳米颗粒薄膜包括第二掺杂剂，其中所述第二掺杂剂是反掺杂剂。 该装置还包括沉积在纳米颗粒薄膜上的第一电极和沉积在背面的第二电极，其中当向前侧施加太阳辐射时，产生电流。

公开(公告)号：US20080171425A1

公开(公告)日：2008-07-17

申请号：US11954784

申请日：2007-12-12

申请人： Dmitry Poplavskyy ,  Maxim Kelman ,  Francesco Lemmi ,  Andreas Meisel

发明人： Dmitry Poplavskyy ,  Maxim Kelman ,  Francesco Lemmi ,  Andreas Meisel

IPC分类号： H01L21/36

CPC分类号： H01L21/02601 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02628 ,  H01L21/02667 ,  H01L21/02686

摘要： A method of forming an epitaxial layer in a chamber is disclosed. The method includes positioning a Group IV semiconductor substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV nanoparticles and a solvent, wherein a porous compact is formed. The method also includes heating the porous compact to a temperature of between about 100° C. and about 1100° C., and for a time period of between about 5 minutes to about 60 minutes with a heating apparatus, wherein the epitaxial layer is formed.

摘要翻译： 公开了一种在室中形成外延层的方法。 该方法包括将IV族半导体衬底定位在腔室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族纳米颗粒和溶剂，其中形成多孔压块。 该方法还包括用加热装置将多孔压块加热至约100℃至约1100℃的温度和约5分钟至约60分钟的时间，其中形成外延层 。

公开(公告)号：US20100136771A1

公开(公告)日：2010-06-03

申请号：US12493946

申请日：2009-06-29

申请人： Hyungrak Kim ,  Malcolm Abbott ,  Andreas Meisel ,  Elizabeth Tai ,  Augustus Jones ,  Dmitry Poplavskyy ,  Karel Vanheusden

发明人： Hyungrak Kim ,  Malcolm Abbott ,  Andreas Meisel ,  Elizabeth Tai ,  Augustus Jones ,  Dmitry Poplavskyy ,  Karel Vanheusden

IPC分类号： H01L21/208 ,  H01B1/02 ,  H01B1/22

CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/02658

摘要： A Group IV based nanoparticle fluid is disclosed. The nanoparticle fluid includes a set of nanoparticles—comprising a set of Group IV atoms, wherein the set of nanoparticles is present in an amount of between about 1 wt % and about 20 wt % of the nanoparticle fluid. The nanoparticle fluid also includes a set of HMW molecules, wherein the set of HMW molecules is present in an amount of between about 0 wt % and about 5 wt % of the nanoparticle fluid. The nanoparticle fluid further includes a set of capping agent molecules, wherein at least some capping agent molecules of the set of capping agent molecules are attached to the set of nanoparticles.

摘要翻译： 公开了基于IV族的纳米颗粒流体。 纳米颗粒流体包括一组纳米颗粒，其包含一组IV族原子，其中所述纳米颗粒组以纳米颗粒流体的约1重量％至约20重量％的量存在。 纳米颗粒流体还包括一组HMW分子，其中该组HMW分子以纳米颗粒流体的约0重量％至约5重量％的量存在。 纳米颗粒流体还包括一组封端剂分子，其中所述一组封端剂分子的至少一些封端剂分子连接到该组纳米颗粒上。

公开(公告)号：US07910393B2

公开(公告)日：2011-03-22

申请号：US12493946

申请日：2009-06-29

申请人： Hyungrak Kim ,  Malcolm Abbott ,  Andreas Meisel ,  Elizabeth Tai ,  Augustus Jones ,  Dmitry Poplavskyy ,  Karel Vanheusden

发明人： Hyungrak Kim ,  Malcolm Abbott ,  Andreas Meisel ,  Elizabeth Tai ,  Augustus Jones ,  Dmitry Poplavskyy ,  Karel Vanheusden

IPC分类号： H01L21/368

CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/02658

摘要： A Group IV based nanoparticle fluid is disclosed. The nanoparticle fluid includes a set of nanoparticles—comprising a set of Group IV atoms, wherein the set of nanoparticles is present in an amount of between about 1 wt % and about 20 wt % of the nanoparticle fluid. The nanoparticle fluid also includes a set of HMW molecules, wherein the set of HMW molecules is present in an amount of between about 0 wt % and about 5 wt % of the nanoparticle fluid. The nanoparticle fluid further includes a set of capping agent molecules, wherein at least some capping agent molecules of the set of capping agent molecules are attached to the set of nanoparticles.

摘要翻译： 公开了基于IV族的纳米颗粒流体。 纳米颗粒流体包括一组纳米颗粒，其包含一组IV族原子，其中所述纳米颗粒组以纳米颗粒流体的约1重量％至约20重量％的量存在。 纳米颗粒流体还包括一组HMW分子，其中该组HMW分子以纳米颗粒流体的约0重量％至约5重量％的量存在。 纳米颗粒流体还包括一组封端剂分子，其中所述一组封端剂分子的至少一些封端剂分子连接到该组纳米颗粒上。

公开(公告)号：US09496136B2

公开(公告)日：2016-11-15

申请号：US12889925

申请日：2010-09-24

申请人： Hyungrak Kim ,  Malcolm Abbott ,  Andreas Meisel ,  Elizabeth Tai ,  Augustus Jones ,  Dmitry Poplavskyy ,  Karel Vanheusden

发明人： Hyungrak Kim ,  Malcolm Abbott ,  Andreas Meisel ,  Elizabeth Tai ,  Augustus Jones ,  Dmitry Poplavskyy ,  Karel Vanheusden

IPC分类号： B01J13/00 ,  H01L21/02

CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/02658

摘要： A silicon nanoparticle fluid including a) a set of silicon nanoparticles present in an amount of between about 1 wt % and about 20 wt % of the silicon nanoparticie fluid; b) a set of HMW binder molecules present in an amount of between about 0 wt % and about 10 wt % of the silicon nanoparticle fluid; and c) a set of capping agent molecules, such that at least some capping agent molecules are attached to the set of silicon nanoparticles. Preferably, the silicon nanoparticle fluid is a shear thinning fluid.

摘要翻译： 一种硅纳米颗粒流体，包括a）一组硅纳米颗粒，其存在量为硅纳米颗粒流体的约1重量％至约20重量％; b）以硅纳米颗粒流体的约0重量％至约10重量％的量存在的一组HMW粘合剂分子; 和c）一组封端剂分子，使得至少一些封端剂分子连接到该组硅纳米颗粒上。 优选地，硅纳米颗粒流体是剪切稀化流体。

公开(公告)号：US20110012066A1

公开(公告)日：2011-01-20

申请号：US12889925

申请日：2010-09-24

申请人： Hyungrak Kim ,  Malcolm Abbott ,  Andreas Meisel ,  Elizabeth Tai ,  Augustus Jones ,  Dmitry Poplavskyy ,  Karel Vanheusden

发明人： Hyungrak Kim ,  Malcolm Abbott ,  Andreas Meisel ,  Elizabeth Tai ,  Augustus Jones ,  Dmitry Poplavskyy ,  Karel Vanheusden

IPC分类号： H01B1/12

CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/02658

摘要： A Group IV based nanoparticle fluid is disclosed. The nanoparticle fluid includes a set of nanoparticles-comprising a set of Group IV atoms, wherein the set of nanoparticles is present in an amount of between about 1 wt % and about 20 wt % of the nanoparticle fluid. The nanoparticle fluid also includes a set of HMW molecules, wherein the set of HMW molecules is present in an amount of between about 0 wt % and about 5 wt % of the nanoparticle fluid. The nanoparticle fluid further includes a set of capping agent molecules, wherein at least some capping agent molecules of the set of capping agent molecules are attached to the set of nanoparticles.

摘要翻译： 公开了基于IV族的纳米颗粒流体。 纳米颗粒流体包括一组纳米颗粒，其包含一组IV族原子，其中所述纳米颗粒组以纳米颗粒流体的约1重量％至约20重量％的量存在。 纳米颗粒流体还包括一组HMW分子，其中该组HMW分子以纳米颗粒流体的约0重量％至约5重量％的量存在。 纳米颗粒流体还包括一组封端剂分子，其中所述一组封端剂分子的至少一些封端剂分子连接到该组纳米颗粒上。

公开(公告)号：US08563133B2

公开(公告)日：2013-10-22

申请号：US11299299

申请日：2005-12-09

申请人： Jeffery A. Whiteford ,  Mihai A. Buretea ,  Jian Chen ,  William P. Freeman ,  Andreas Meisel ,  Linh Nguyen ,  J. Wallace Parce ,  Erik Scher

发明人： Jeffery A. Whiteford ,  Mihai A. Buretea ,  Jian Chen ,  William P. Freeman ,  Andreas Meisel ,  Linh Nguyen ,  J. Wallace Parce ,  Erik Scher

IPC分类号： B32B5/16

CPC分类号： B05D5/12 ,  C07F5/025 ,  Y10T428/2982 ,  Y10T428/2991 ,  Y10T428/2993 ,  Y10T428/2995 ,  Y10T428/2996 ,  Y10T428/2998

摘要： Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure, for reversibly modifying nanostructures, and for manipulating the electronic properties of nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures. Ligands of the present invention are also useful for manipulating the electronic properties of nanostructure compositions (e.g., by modulating energy levels, creating internal bias fields, reducing charge transfer or leakage, etc.).