公开(公告)号：US20080254601A1

公开(公告)日：2008-10-16

申请号：US12060528

申请日：2008-04-01

申请人： Mason Terry ,  Malcolm Abbott ,  Maxim Kelman ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Eric Schiff

发明人： Mason Terry ,  Malcolm Abbott ,  Maxim Kelman ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Eric Schiff

IPC分类号： H01L21/208

CPC分类号： H01L21/02667 ,  H01L21/02524 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628

摘要： A method for producing a Group IV semiconductor thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber, wherein the chamber further has a chamber pressure. The method further includes depositing a nanoparticle ink on the substrate, the nanoparticle ink including set of Group IV semiconductor nanoparticles and a solvent, wherein each nanoparticle of the set of Group IV semiconductor nanoparticles includes a nanoparticle surface, wherein a layer of Group IV semiconductor nanoparticles is formed. The method also includes striking a hydrogen plasma; and heating the layer of Group IV semiconductor nanoparticles to a fabrication temperature of between about 300° C. and about 1350° C., and between about 1 nanosecond and about 10 minutes; wherein the Group IV semiconductor thin film is formed.

摘要翻译： 公开了一种用于在腔室中制造IV族半导体薄膜的方法。 该方法包括将衬底定位在腔室中，其中腔室还具有腔室压力。 该方法还包括在衬底上沉积纳米颗粒油墨，所述纳米颗粒油墨包括IV族半导体纳米颗粒和溶剂组，其中该组IV半导体纳米颗粒的每个纳米颗粒包括纳米颗粒表面，其中第IV族半导体纳米颗粒 形成了。 该方法还包括冲击氢等离子体; 以及将所述IV族半导体纳米颗粒层加热至约300℃至约1350℃，约1纳秒至约10分钟之间的制备温度; 其中形成IV族半导体薄膜。

公开(公告)号：US07572740B2

公开(公告)日：2009-08-11

申请号：US12060528

申请日：2008-04-01

申请人： Mason Terry ,  Malcolm Abbott ,  Maxim Kelman ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Eric Schiff

发明人： Mason Terry ,  Malcolm Abbott ,  Maxim Kelman ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Eric Schiff

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02667 ,  H01L21/02524 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628

摘要： A method for producing a Group IV semiconductor thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber, wherein the chamber further has a chamber pressure. The method further includes depositing a nanoparticle ink on the substrate, the nanoparticle ink including set of Group IV semiconductor nanoparticles and a solvent, wherein each nanoparticle of the set of Group IV semiconductor nanoparticles includes a nanoparticle surface, wherein a layer of Group IV semiconductor nanoparticles is formed. The method also includes striking a hydrogen plasma; and heating the layer of Group IV semiconductor nanoparticles to a fabrication temperature of between about 300° C. and about 1350° C., and between about 1 nanosecond and about 10 minutes; wherein the Group IV semiconductor thin film is formed.

摘要翻译： 公开了一种用于在腔室中制造IV族半导体薄膜的方法。 该方法包括将衬底定位在腔室中，其中腔室还具有腔室压力。 该方法还包括在衬底上沉积纳米颗粒油墨，所述纳米颗粒油墨包括IV族半导体纳米颗粒和溶剂组，其中该组IV半导体纳米颗粒的每个纳米颗粒包括纳米颗粒表面，其中第IV族半导体纳米颗粒 形成了。 该方法还包括冲击氢等离子体; 以及将所述IV族半导体纳米颗粒层加热至约300℃至约1350℃，约1纳秒至约10分钟之间的制备温度; 其中形成IV族半导体薄膜。

公开(公告)号：US20120009721A1

公开(公告)日：2012-01-12

申请号：US13239806

申请日：2011-09-22

申请人： Malcolm Abbott ,  Maxim Kelman ,  Francesco Lemmi ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Mason Terry ,  Karel Vanheusden

发明人： Malcolm Abbott ,  Maxim Kelman ,  Francesco Lemmi ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Mason Terry ,  Karel Vanheusden

IPC分类号： H01L31/18

CPC分类号： H01L31/0352 ,  H01L31/056 ,  H01L31/061 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： A device for generating electricity from solar radiation is disclosed. The device includes a wafer doped with a first dopant, the wafer including a front-side and a back-side, wherein the front-side is configured to be exposed to the solar radiation. The device also includes a fused Group IV nanoparticle thin film deposited on the front-side, wherein the nanoparticle thin film includes a second dopant, wherein the second dopant is a counter dopant. The device further includes a first electrode deposited on the nanoparticle thin film, and a second electrode deposited on the back-side, wherein when solar radiation is applied to the front-side, an electrical current is produced.

摘要翻译： 公开了一种用于从太阳辐射发电的装置。 该器件包括掺杂有第一掺杂剂的晶片，晶片包括前侧和后侧，其中前侧被配置为暴露于太阳辐射。 该装置还包括沉积在前侧的融合的IV族纳米颗粒薄膜，其中所述纳米颗粒薄膜包括第二掺杂剂，其中所述第二掺杂剂是反掺杂剂。 该装置还包括沉积在纳米颗粒薄膜上的第一电极和沉积在背面的第二电极，其中当向前侧施加太阳辐射时，产生电流。

公开(公告)号：US20100275982A1

公开(公告)日：2010-11-04

申请号：US12029838

申请日：2008-02-12

申请人： Malcolm Abbott ,  Maxim Kelman ,  Francesco Lemmi ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Mason Terry ,  Karel Vanheusden

发明人： Malcolm Abbott ,  Maxim Kelman ,  Francesco Lemmi ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Mason Terry ,  Karel Vanheusden

IPC分类号： H01L31/0352

CPC分类号： H01L31/0352 ,  H01L31/056 ,  H01L31/061 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： A device for generating electricity from solar radiation is disclosed. The device includes a wafer doped with a first dopant, the wafer including a front-side and a back-side, wherein the front-side is configured to be exposed to the solar radiation. The device also includes a fused Group IV nanoparticle thin film deposited on the front-side, wherein the nanoparticle thin film includes a second dopant, wherein the second dopant is a counter dopant. The device further includes a first electrode deposited on the nanoparticle thin film, and a second electrode deposited on the back-side, wherein when solar radiation is applied to the front-side, an electrical current is produced.

摘要翻译： 公开了一种用于从太阳辐射发电的装置。 该器件包括掺杂有第一掺杂剂的晶片，晶片包括前侧和后侧，其中前侧被配置为暴露于太阳辐射。 该装置还包括沉积在前侧的融合的IV族纳米颗粒薄膜，其中所述纳米颗粒薄膜包括第二掺杂剂，其中所述第二掺杂剂是反掺杂剂。 该装置还包括沉积在纳米颗粒薄膜上的第一电极和沉积在背面的第二电极，其中当向前侧施加太阳辐射时，产生电流。

公开(公告)号：US20080171425A1

公开(公告)日：2008-07-17

申请号：US11954784

申请日：2007-12-12

申请人： Dmitry Poplavskyy ,  Maxim Kelman ,  Francesco Lemmi ,  Andreas Meisel

发明人： Dmitry Poplavskyy ,  Maxim Kelman ,  Francesco Lemmi ,  Andreas Meisel

IPC分类号： H01L21/36

CPC分类号： H01L21/02601 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02628 ,  H01L21/02667 ,  H01L21/02686

摘要： A method of forming an epitaxial layer in a chamber is disclosed. The method includes positioning a Group IV semiconductor substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV nanoparticles and a solvent, wherein a porous compact is formed. The method also includes heating the porous compact to a temperature of between about 100° C. and about 1100° C., and for a time period of between about 5 minutes to about 60 minutes with a heating apparatus, wherein the epitaxial layer is formed.

摘要翻译： 公开了一种在室中形成外延层的方法。 该方法包括将IV族半导体衬底定位在腔室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族纳米颗粒和溶剂，其中形成多孔压块。 该方法还包括用加热装置将多孔压块加热至约100℃至约1100℃的温度和约5分钟至约60分钟的时间，其中形成外延层 。

公开(公告)号：US20110053352A1

公开(公告)日：2011-03-03

申请号：US12926252

申请日：2010-11-04

申请人： Dmitry Poplavskyy ,  Maxim Kelman ,  Mason Terry

发明人： Dmitry Poplavskyy ,  Maxim Kelman ,  Mason Terry

IPC分类号： H01L21/20 ,  B82Y30/00

CPC分类号： H01L21/02601 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02524 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  Y10S977/892

摘要： A method for forming a passivated densified nanoparticle thin film on a substrate in a chamber is disclosed. The method includes depositing a nanoparticle ink on a first region on the substrate, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 400° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes flowing an oxidizer gas into the chamber; and heating the porous compact to a second temperature between about 600° C. and about 1000° C., and for a second time period of between about 5 seconds and about 1 hour; wherein the passivated densified nanoparticle thin film is formed.

摘要翻译： 公开了一种在室中的基板上形成钝化的致密纳米颗粒薄膜的方法。 该方法包括在衬底上的第一区域上沉积纳米颗粒油墨，纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。 该方法还包括将纳米颗粒油墨加热到约30℃至约400℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔 形成紧凑。 该方法还包括使氧化剂气体流入室中; 并将所述多孔压块加热至约600℃至约1000℃的第二温度和约5秒至约1小时的第二时间段; 其中形成钝化的致密纳米颗粒薄膜。

公开(公告)号：US20090233426A1

公开(公告)日：2009-09-17

申请号：US12047824

申请日：2008-03-13

申请人： Dmitry Poplavskyy ,  Maxim Kelman ,  Mason Terry

发明人： Dmitry Poplavskyy ,  Maxim Kelman ,  Mason Terry

IPC分类号： H01L21/208

CPC分类号： H01L21/02601 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02524 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  Y10S977/892

摘要： A method for forming a passivated densified nanoparticle thin film on a substrate in a chamber is disclosed. The method includes depositing a nanoparticle ink on a first region on the substrate, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 400° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes flowing an oxidizer gas into the chamber; and heating the porous compact to a second temperature between about 600° C. and about 1000° C., and for a second time period of between about 5 seconds and about 1 hour; wherein the passivated densified nanoparticle thin film is formed.

摘要翻译： 公开了一种在室中的基板上形成钝化的致密纳米颗粒薄膜的方法。 该方法包括在衬底上的第一区域上沉积纳米颗粒油墨，纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。 该方法还包括将纳米颗粒油墨加热到约30℃至约400℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔 形成紧凑。 该方法还包括使氧化剂气体流入室中; 并将所述多孔压块加热至约600℃至约1000℃的第二温度和约5秒至约1小时的第二时间段; 其中形成钝化的致密纳米颗粒薄膜。

公开(公告)号：US08273669B2

公开(公告)日：2012-09-25

申请号：US12926252

申请日：2010-11-04

申请人： Dmitry Poplavskyy ,  Maxim Kelman ,  Mason Terry

发明人： Dmitry Poplavskyy ,  Maxim Kelman ,  Mason Terry

IPC分类号： H01L21/471

CPC分类号： H01L21/02601 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02524 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  Y10S977/892

摘要： A method for forming a passivated densified nanoparticle thin film on a substrate in a chamber is disclosed. The method includes depositing a nanoparticle ink on a first region on the substrate, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 400° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes flowing an oxidizer gas into the chamber; and heating the porous compact to a second temperature between about 600° C. and about 1000° C., and for a second time period of between about 5 seconds and about 1 hour; wherein the passivated densified nanoparticle thin film is formed.

摘要翻译： 公开了一种在室中的基板上形成钝化的致密纳米颗粒薄膜的方法。 该方法包括在衬底上的第一区域上沉积纳米颗粒油墨，纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。 该方法还包括将纳米颗粒油墨加热到约30℃至约400℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔 形成紧凑。 该方法还包括使氧化剂气体流入室中; 并将所述多孔压块加热至约600℃至约1000℃的第二温度和约5秒至约1小时的第二时间; 其中形成钝化的致密纳米颗粒薄膜。

公开(公告)号：US20090269913A1

公开(公告)日：2009-10-29

申请号：US12109684

申请日：2008-04-25

申请人： Mason Terry ,  Homer Antoniadis ,  Dmitry Poplavskyy ,  Maxim Kelman

发明人： Mason Terry ,  Homer Antoniadis ,  Dmitry Poplavskyy ,  Maxim Kelman

IPC分类号： H01L21/225

CPC分类号： H01L21/2256 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/2257 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of forming a diffusion region is disclosed. The method includes depositing a nanoparticle ink on a surface of a wafer to form a non-densified thin film, the nanoparticle ink having set of nanoparticles, wherein at least some nanoparticles of the set of nanoparticles include dopant atoms therein. The method also includes heating the non-densified thin film to a first temperature and for a first time period to remove a solvent from the deposited nanoparticle ink; and heating the non-densified thin film to a second temperature and for a second time period to form a densified thin film, wherein at least some of the dopant atoms diffuse into the wafer to form the diffusion region.

摘要翻译： 公开了形成扩散区域的方法。 该方法包括在晶片的表面上沉积纳米颗粒油墨以形成非致密化薄膜，纳米颗粒油墨具有一组纳米颗粒，其中该组纳米颗粒中的至少一些纳米颗粒包括其中的掺杂剂原子。 该方法还包括将非致密化薄膜加热至第一温度并且在第一时间段内从沉积的纳米颗粒油墨中除去溶剂; 以及将所述非致密化薄膜加热至第二温度并且持续第二时间以形成致密的薄膜，其中至少一些所述掺杂剂原子扩散到所述晶片中以形成所述扩散区域。

公开(公告)号：US07923368B2

公开(公告)日：2011-04-12

申请号：US12109684

申请日：2008-04-25

申请人： Mason Terry ,  Homer Antoniadis ,  Dmitry Poplavskyy ,  Maxim Kelman

发明人： Mason Terry ,  Homer Antoniadis ,  Dmitry Poplavskyy ,  Maxim Kelman

IPC分类号： H01L21/44

CPC分类号： H01L21/2256 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/2257 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of forming a diffusion region is disclosed. The method includes depositing a nanoparticle ink on a surface of a wafer to form a non-densified thin film, the nanoparticle ink having set of nanoparticles, wherein at least some nanoparticles of the set of nanoparticles include dopant atoms therein. The method also includes heating the non-densified thin film to a first temperature and for a first time period to remove a solvent from the deposited nanoparticle ink; and heating the non-densified thin film to a second temperature and for a second time period to form a densified thin film, wherein at least some of the dopant atoms diffuse into the wafer to form the diffusion region.

摘要翻译： 公开了形成扩散区域的方法。 该方法包括在晶片的表面上沉积纳米颗粒油墨以形成非致密化薄膜，纳米颗粒油墨具有一组纳米颗粒，其中该组纳米颗粒中的至少一些纳米颗粒包括其中的掺杂剂原子。 该方法还包括将非致密化薄膜加热至第一温度并且在第一时间段内从沉积的纳米颗粒油墨中除去溶剂; 以及将所述非致密化薄膜加热至第二温度并且持续第二时间以形成致密的薄膜，其中至少一些所述掺杂剂原子扩散到所述晶片中以形成所述扩散区域。