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    METHODS FOR OPTIMIZING THIN FILM FORMATION WITH REACTIVE GASES
    3.
    发明申请
    METHODS FOR OPTIMIZING THIN FILM FORMATION WITH REACTIVE GASES 失效
    用反应性气体优化薄膜形成的方法

    公开(公告)号：US20080254601A1

    公开(公告)日：2008-10-16

    申请号：US12060528

    申请日：2008-04-01

    申请人： Mason Terry ,  Malcolm Abbott ,  Maxim Kelman ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Eric Schiff

    发明人： Mason Terry ,  Malcolm Abbott ,  Maxim Kelman ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Eric Schiff

    IPC分类号： H01L21/208

    CPC分类号： H01L21/02667 ,  H01L21/02524 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628

    摘要： A method for producing a Group IV semiconductor thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber, wherein the chamber further has a chamber pressure. The method further includes depositing a nanoparticle ink on the substrate, the nanoparticle ink including set of Group IV semiconductor nanoparticles and a solvent, wherein each nanoparticle of the set of Group IV semiconductor nanoparticles includes a nanoparticle surface, wherein a layer of Group IV semiconductor nanoparticles is formed. The method also includes striking a hydrogen plasma; and heating the layer of Group IV semiconductor nanoparticles to a fabrication temperature of between about 300° C. and about 1350° C., and between about 1 nanosecond and about 10 minutes; wherein the Group IV semiconductor thin film is formed.

    摘要翻译： 公开了一种用于在腔室中制造IV族半导体薄膜的方法。 该方法包括将衬底定位在腔室中，其中腔室还具有腔室压力。 该方法还包括在衬底上沉积纳米颗粒油墨，所述纳米颗粒油墨包括IV族半导体纳米颗粒和溶剂组，其中该组IV半导体纳米颗粒的每个纳米颗粒包括纳米颗粒表面，其中第IV族半导体纳米颗粒 形成了。 该方法还包括冲击氢等离子体; 以及将所述IV族半导体纳米颗粒层加热至约300℃至约1350℃，约1纳秒至约10分钟之间的制备温度; 其中形成IV族半导体薄膜。

    Methods for optimizing thin film formation with reactive gases
    4.
    发明授权
    Methods for optimizing thin film formation with reactive gases 失效
    用反应气体优化薄膜形成的方法

    公开(公告)号：US07572740B2

    公开(公告)日：2009-08-11

    申请号：US12060528

    申请日：2008-04-01

    申请人： Mason Terry ,  Malcolm Abbott ,  Maxim Kelman ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Eric Schiff

    发明人： Mason Terry ,  Malcolm Abbott ,  Maxim Kelman ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Eric Schiff

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/02667 ,  H01L21/02524 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628

    摘要： A method for producing a Group IV semiconductor thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber, wherein the chamber further has a chamber pressure. The method further includes depositing a nanoparticle ink on the substrate, the nanoparticle ink including set of Group IV semiconductor nanoparticles and a solvent, wherein each nanoparticle of the set of Group IV semiconductor nanoparticles includes a nanoparticle surface, wherein a layer of Group IV semiconductor nanoparticles is formed. The method also includes striking a hydrogen plasma; and heating the layer of Group IV semiconductor nanoparticles to a fabrication temperature of between about 300° C. and about 1350° C., and between about 1 nanosecond and about 10 minutes; wherein the Group IV semiconductor thin film is formed.

    摘要翻译： 公开了一种用于在腔室中制造IV族半导体薄膜的方法。 该方法包括将衬底定位在腔室中，其中腔室还具有腔室压力。 该方法还包括在衬底上沉积纳米颗粒油墨，所述纳米颗粒油墨包括IV族半导体纳米颗粒和溶剂组，其中该组IV半导体纳米颗粒的每个纳米颗粒包括纳米颗粒表面，其中第IV族半导体纳米颗粒 形成了。 该方法还包括冲击氢等离子体; 以及将所述IV族半导体纳米颗粒层加热至约300℃至约1350℃，约1纳秒至约10分钟之间的制备温度; 其中形成IV族半导体薄膜。

    GROUP IV NANOPARTICLE FLUID
    8.
    发明申请
    GROUP IV NANOPARTICLE FLUID 审中-公开
    第四组纳米流体

    公开(公告)号：US20110012066A1

    公开(公告)日：2011-01-20

    申请号：US12889925

    申请日：2010-09-24

    申请人： Hyungrak Kim ,  Malcolm Abbott ,  Andreas Meisel ,  Elizabeth Tai ,  Augustus Jones ,  Dmitry Poplavskyy ,  Karel Vanheusden

    发明人： Hyungrak Kim ,  Malcolm Abbott ,  Andreas Meisel ,  Elizabeth Tai ,  Augustus Jones ,  Dmitry Poplavskyy ,  Karel Vanheusden

    IPC分类号： H01B1/12

    CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/02658

    摘要： A Group IV based nanoparticle fluid is disclosed. The nanoparticle fluid includes a set of nanoparticles-comprising a set of Group IV atoms, wherein the set of nanoparticles is present in an amount of between about 1 wt % and about 20 wt % of the nanoparticle fluid. The nanoparticle fluid also includes a set of HMW molecules, wherein the set of HMW molecules is present in an amount of between about 0 wt % and about 5 wt % of the nanoparticle fluid. The nanoparticle fluid further includes a set of capping agent molecules, wherein at least some capping agent molecules of the set of capping agent molecules are attached to the set of nanoparticles.

    摘要翻译： 公开了基于IV族的纳米颗粒流体。 纳米颗粒流体包括一组纳米颗粒，其包含一组IV族原子，其中所述纳米颗粒组以纳米颗粒流体的约1重量％至约20重量％的量存在。 纳米颗粒流体还包括一组HMW分子，其中该组HMW分子以纳米颗粒流体的约0重量％至约5重量％的量存在。 纳米颗粒流体还包括一组封端剂分子，其中所述一组封端剂分子的至少一些封端剂分子连接到该组纳米颗粒上。

    METHOD OF FORMING GROUP IV SEMICONDUCTOR JUNCTIONS USING LASER PROCESSING
    10.
    发明申请
    METHOD OF FORMING GROUP IV SEMICONDUCTOR JUNCTIONS USING LASER PROCESSING 审中-公开
    使用激光加工形成IV族半导体结的方法

    公开(公告)号：US20080305619A1

    公开(公告)日：2008-12-11

    申请号：US12114141

    申请日：2008-05-02

    申请人： Francesco Lemmi ,  Andreas Meisel ,  Homer Antoniadis

    发明人： Francesco Lemmi ,  Andreas Meisel ,  Homer Antoniadis

    IPC分类号： H01L21/20 ,  H01L21/02

    CPC分类号： H01L31/182 ,  H01L21/0237 ,  H01L21/02524 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/02675 ,  H01L31/03682 ,  H01L31/03921 ,  H01L31/068 ,  H01L31/077 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method forming a Group IV semiconductor junction on a substrate is disclosed. The method includes depositing a first set Group IV semiconductor nanoparticles on the substrate. The method also includes applying a first laser at a first laser wavelength, a first fluence, a first pulse duration, a first number of repetitions, and a first repetition rate to the first set Group IV semiconductor nanoparticles to form a first densified film with a first thickness, wherein the first laser wavelength and the first fluence are selected to limit a first depth profile of the first laser to the first thickness. The method further includes depositing a second set Group IV semiconductor nanoparticles on the first densified film. The method also includes applying a second laser at a second laser wavelength, a second fluence, a second pulse duration, a second number of repetitions, and a second repetition rate to the second set Group IV semiconductor nanoparticles to form a second densified film with a second thickness, wherein the second laser wavelength and the second fluence are selected to limit a second depth profile of the second laser to the second thickness.

    摘要翻译： 公开了一种在衬底上形成IV族半导体结的方法。 该方法包括在衬底上沉积第一组IV族半导体纳米颗粒。 该方法还包括将第一激光波长的第一激光，第一注量，第一脉冲持续时间，第一次重复和第一重复率应用于第一组IV族半导体纳米颗粒，以形成第一致密化膜，其具有 第一厚度，其中选择第一激光波长和第一注量以将第一激光器的第一深度分布限制到第一厚度。 该方法还包括在第一致密化膜上沉积第二组IV族半导体纳米颗粒。 该方法还包括将第二激光器以第二激光波长，第二注量，第二脉冲持续时间，第二数量的重复和第二重复率施加到第二组IV族半导体纳米颗粒以形成第二致密化膜，其具有 第二厚度，其中选择第二激光波长和第二注量以将第二激光器的第二深度分布限制到第二厚度。