公开(公告)号：US11152227B2

公开(公告)日：2021-10-19

申请号：US16107566

申请日：2018-08-21

Applicant: Massachusetts Institute of Technology

Inventor： Richard Swartwout ,  Farnaz Niroui ,  Vladimir Bulovic ,  Jeffrey H. Lang ,  Joel Jean

IPC: H01L21/56 ,  H01L21/02 ,  H01L23/31 ,  H01L23/10 ,  H01L29/06

Abstract: A method includes encapsulating structures disposed on or over a surface of a substrate in an encapsulant. The method also includes separating the encapsulant from the substrate. An apparatus includes a composite film having structures embedded in an encapsulant. The composite film has a surface with a surface roughness of less than one nm. An apparatus includes an encapsulant film having a surface with indentations formed therein. The surface has a surface roughness apart from the indentations of less than one nm.

公开(公告)号：US20240188422A1

公开(公告)日：2024-06-06

申请号：US18562679

申请日：2022-05-26

Applicant: Massachusetts Institute of Technology

Inventor： Vladimir Bulovic ,  Richard Swartwout

IPC: H10K85/50 ,  C07F19/00 ,  C09D11/033 ,  C09D11/037 ,  C09D11/52 ,  H10K30/10 ,  H10K30/50 ,  H10K71/15

CPC classification number: H10K85/50 ,  C07F19/005 ,  C09D11/033 ,  C09D11/037 ,  C09D11/52 ,  H10K30/10 ,  H10K30/50 ,  H10K71/15

Abstract: Semiconductor thin films and rapid methods of fabrication can include mixed cations created through recrystalization.

公开(公告)号：US20190080932A1

公开(公告)日：2019-03-14

申请号：US16107566

申请日：2018-08-21

Applicant: Massachusetts Institute of Technology

Inventor： Richard Swartwout ,  Farnaz Niroui ,  Vladimir Bulovic ,  Jeffrey H. Lang ,  Joel Jean

IPC: H01L21/56 ,  H01L29/06 ,  H01L23/31 ,  H01L21/02

Abstract: A method includes encapsulating structures disposed on or over a surface of a substrate in an encapsulant. The method also includes separating the encapsulant from the substrate. An apparatus includes a composite film having structures embedded in an encapsulant. The composite film has a surface with a surface roughness of less than one nm. An apparatus includes an encapsulant film having a surface with indentations formed therein. The surface has a surface roughness apart from the indentations of less than one nm.