公开(公告)号：US20230400652A1

公开(公告)日：2023-12-14

申请号：US18317597

申请日：2023-05-15

Applicant: Massachusetts Institute of Technology

Inventor： Christopher Heidelberger ,  Cheryl Marie SORACE-AGASKAR ,  Jason PLANT ,  Boris KHARAS ,  Reuel B. SWINT ,  Yifei Li ,  Paul William JUODAWLKIS

IPC: G02B6/43 ,  G02B6/42

CPC classification number: G02B6/43 ,  G02B6/4283 ,  G02B6/4295

Abstract: A III-V/SiNx hybrid integrated photonics platform is described. A wafer can include regions where SiNx waveguides are formed and regions where III-V waveguides have been grown heteroepitaxially from the Si substrate and formed lithographically to butt couple to the SiNx waveguides. Efficient optical coupling is possible between the SiNx and III-V waveguides (−2.5 dB loss/transition). A threading dislocation density (TDD) as low as 4×106 cm−2 can be obtained in the III-V waveguides. The TDD enables fully parallel fabrication of integrated III-V optoelectronic devices, allowing for complex photonic integrated circuits with many active components.