公开(公告)号：US06998217B2

公开(公告)日：2006-02-14

申请号：US10326953

申请日：2003-01-06

申请人： Jerry Martyniuk ,  H. Christopher Hamaker ,  Matthew J. Jolley ,  Peter Pirogovsky ,  Asher Klatchko ,  Richard E. Crandall

发明人： Jerry Martyniuk ,  H. Christopher Hamaker ,  Matthew J. Jolley ,  Peter Pirogovsky ,  Asher Klatchko ,  Richard E. Crandall

IPC分类号： G03C5/00

CPC分类号： G03F1/78

摘要： Systems and methods for gray scale lithography for defining edges such as on microelectronic device patterns during integrated circuit fabrication are disclosed. Methods for critical dimension edge placement and slope enhancement utilize central pixel dose addition or modulated inner pixels. A method for gray scale lithography for defining edges of features generally comprises identifying a center pixel of a feature, exposing the general width of the feature including the identified center pixel with full doses, and enhancing the identified center pixel by exposing the identified center pixel with additional dose to accurately place the edge of the feature, whereby the edge of the feature is defined and moved by exposing the center pixel with the additional dose. Another method for gray scale lithography generally comprises identifying a proximal interior pixel immediately interior to an unbiased edge of the feature, exposing the general width of the feature full dosages, and exposing the proximal interior pixel with a dosage of elevated intensity selected from a set of gray levels, the elevated intensities being above the full dosage, the set of gray levels biases the edge of the feature and facilitates in further moving the edge of the feature in fractional increments of a pixel depending upon the gray level selected.

摘要翻译： 公开了用于在集成电路制造期间用于限定边缘（例如微电子器件图案）上的灰度光刻的系统和方法。 关键尺寸边缘放置和斜率增强的方法利用中心像素剂量加法或调制内像素。 用于定义特征边缘的灰度光刻的方法通常包括识别特征的中心像素，以全剂量暴露包括所识别的中心像素的特征的一般宽度，以及通过将所识别的中心像素曝光于所识别的中心像素， 附加剂量以精确地放置特征的边缘，由此通过用附加剂量暴露中心像素来限定和移动特征的边缘。 用于灰度光刻的另一种方法通常包括：在特征的非偏向边缘内部识别近端内部像素，暴露特征全部剂量的总体宽度，以及从一组 灰度级，提高的强度高于全剂量，灰度级集合偏置特征的边缘，并且有助于根据所选择的灰度级进一步移动像素的分数增量中的特征边缘。

公开(公告)号：US06819450B1

公开(公告)日：2004-11-16

申请号：US09538848

申请日：2000-03-28

申请人： Matthew J. Jolley ,  Jerry Martyniuk ,  H. Christopher Hamaker

发明人： Matthew J. Jolley ,  Jerry Martyniuk ,  H. Christopher Hamaker

IPC分类号： G06K1500

CPC分类号： G03F7/70283 ,  G03F7/70383

摘要： A semiconductor fabrication gray level photolithography strategy, in which the energy beam intensities corresponding to each gray level are selected from a set of non-linear, non-monotonic intensities. Rasterized geometric shape edges are defined by associating one or more intermediate gray levels with pixels in at least one row of pixels. The geometric shape is printed or imaged on an energy sensitive layer by modulating an energy beam to the intensity corresponding to the associated gray level, and directing the modulated beam to the pixel location on the layer. The intensities corresponding to the gray levels are selected so as to optimize critical dimension (CD) characteristics and other printing features.

摘要翻译： 半导体制造灰度光刻策略，其中对应于每个灰度级的能量束强度从一组非线性非单调强度中选择。 通过将一个或多个中间灰度级别与至少一行像素中的像素相关联来定义光栅化几何形状边缘。 通过将能量束调制到与相关联的灰度级相对应的强度，并将调制的光束引导到层上的像素位置，将几何形状印刷或成像在能量敏感层上。 选择对应于灰度级的强度，以便优化临界尺寸（CD）特性和其他印刷特征。