Bonding Silicon Silicon Carbide to Glass Ceramics
    1.
    发明申请
    Bonding Silicon Silicon Carbide to Glass Ceramics 失效
    将硅碳化硅结合到玻璃陶瓷

    公开(公告)号:US20100128242A1

    公开(公告)日:2010-05-27

    申请号:US12700049

    申请日:2010-02-04

    IPC分类号: B05D5/10 G03B27/58

    摘要: A wafer chuck for use in a lithographic apparatus, which includes a low-thermal expansion glass ceramic substrate, a silicon silicon carbide layer, and a bonding layer comprising silicate having a strength of at least about 5 megapascals, the bonding layer attaching the silicon silicon carbide layer to the substrate is described. Also, a method of forming a wafer chuck for use in a lithographic apparatus, which includes coating a portion of one or both of a low-thermal expansion glass ceramic substrate and a silicon silicon carbide layer with a bonding solution, and contacting the substrate and the silicon silicon carbide layer to bond the substrate and the silicon silicon carbide layer together is described.

    摘要翻译: 一种用于光刻设备的晶片卡盘,其包括低热膨胀玻璃陶瓷基板,硅碳化硅层和包括具有至少约5兆帕的强度的硅酸盐的粘合层,所述粘合层将硅硅 描述了到基底的碳化物层。 另外,一种形成用于光刻设备的晶片卡盘的方法,其包括用粘合溶液涂覆低热膨胀玻璃陶瓷基板和硅碳化硅中的一个或两个的一部分,并使基板和 描述了将基板和硅碳化硅层结合在一起的硅碳化硅层。

    Bonding silicon silicon carbide to glass ceramics
    2.
    发明授权
    Bonding silicon silicon carbide to glass ceramics 失效
    将硅碳化硅粘合到玻璃陶瓷上

    公开(公告)号:US07678458B2

    公开(公告)日:2010-03-16

    申请号:US11626747

    申请日:2007-01-24

    摘要: A wafer chuck for use in a lithographic apparatus, which includes a low-thermal expansion glass ceramic substrate, a silicon silicon carbide layer, and a bonding layer comprising silicate having a strength of at least about 5 megapascals, the bonding layer attaching the silicon silicon carbide layer to the substrate is described. Also, a method of forming a wafer chuck for use in a lithographic apparatus, which includes coating a portion of one or both of a low-thermal expansion glass ceramic substrate and a silicon silicon carbide layer with a bonding solution, and contacting the substrate and the silicon silicon carbide layer to bond the substrate and the silicon silicon carbide layer together is described.

    摘要翻译: 一种用于光刻设备的晶片卡盘,其包括低热膨胀玻璃陶瓷基板,硅碳化硅层和包括具有至少约5兆帕的强度的硅酸盐的粘合层,所述粘合层将硅硅 描述了到基底的碳化物层。 另外,一种形成用于光刻设备的晶片卡盘的方法,其包括用粘合溶液涂覆低热膨胀玻璃陶瓷基板和硅碳化硅中的一个或两个的一部分,并使基板和 描述了将基板和硅碳化硅层结合在一起的硅碳化硅层。

    Bonding silicon silicon carbide to glass ceramics
    3.
    发明授权
    Bonding silicon silicon carbide to glass ceramics 失效
    将硅碳化硅粘合到玻璃陶瓷上

    公开(公告)号:US08168017B2

    公开(公告)日:2012-05-01

    申请号:US12700049

    申请日:2010-02-04

    摘要: A wafer chuck for use in a lithographic apparatus, which includes a low-thermal expansion glass ceramic substrate, a silicon silicon carbide layer, and a bonding layer comprising silicate having a strength of at least about 5 megapascals, the bonding layer attaching the silicon silicon carbide layer to the substrate is described. Also, a method of forming a wafer chuck for use in a lithographic apparatus, which includes coating a portion of one or both of a low-thermal expansion glass ceramic substrate and a silicon silicon carbide layer with a bonding solution, and contacting the substrate and the silicon silicon carbide layer to bond the substrate and the silicon silicon carbide layer together is described.

    摘要翻译: 一种用于光刻设备的晶片卡盘,其包括低热膨胀玻璃陶瓷基板,硅碳化硅层和包括具有至少约5兆帕的强度的硅酸盐的粘合层,所述粘合层将硅硅 描述了到基底的碳化物层。 另外,一种形成用于光刻设备的晶片卡盘的方法,其包括用粘合溶液涂覆低热膨胀玻璃陶瓷基板和硅碳化硅中的一个或两个的一部分,并使基板和 描述了将基板和硅碳化硅层结合在一起的硅碳化硅层。

    Bonding Silicon Silicon Carbide to Glass Ceramics
    4.
    发明申请
    Bonding Silicon Silicon Carbide to Glass Ceramics 失效
    将硅碳化硅结合到玻璃陶瓷

    公开(公告)号:US20080174054A1

    公开(公告)日:2008-07-24

    申请号:US11626747

    申请日:2007-01-24

    IPC分类号: B28B1/00

    摘要: A wafer chuck for use in a lithographic apparatus, which includes a low-thermal expansion glass ceramic substrate, a silicon silicon carbide layer, and a bonding layer comprising silicate having a strength of at least about 5 megapascals, the bonding layer attaching the silicon silicon carbide layer to the substrate is described. Also, a method of forming a wafer chuck for use in a lithographic apparatus, which includes coating a portion of one or both of a low-thermal expansion glass ceramic substrate and a silicon silicon carbide layer with a bonding solution, and contacting the substrate and the silicon silicon carbide layer to bond the substrate and the silicon silicon carbide layer together is described.

    摘要翻译: 一种用于光刻设备的晶片卡盘,其包括低热膨胀玻璃陶瓷基板,硅碳化硅层和包括具有至少约5兆帕的强度的硅酸盐的粘合层,所述粘合层将硅硅 描述了到基底的碳化物层。 另外,一种形成用于光刻设备的晶片卡盘的方法,其包括用粘合溶液涂覆低热膨胀玻璃陶瓷基板和硅碳化硅中的一个或两个的一部分,并使基板和 描述了将基板和硅碳化硅层结合在一起的硅碳化硅层。

    Wafer stage with reference surface
    5.
    发明授权
    Wafer stage with reference surface 失效
    带参考面的晶圆台

    公开(公告)号:US5285142A

    公开(公告)日:1994-02-08

    申请号:US15520

    申请日:1993-02-09

    摘要: An electromagnetic sub-stage and an electromagnetic monolithic stage coupled such that one follows the other having a single reference surface positioned therebetween. A sub-stage having linear motors for movement in the X-Y direction is mounted by a U bracket to a monolithic stage. The monolithic stage is suspended by flat electromagnetic coils providing precise motion of the body of the monolithic stage in X, Y, Z, and rotation about the Z axis or .theta.. Follow control means links or tracks the movement of the monolithic stage to the sub-stage such that the monolithic stage positioning coils are centered in their respective magnetic structure. Adjustable mechanical stops attached the monolithic stage in combination with air bearings riding on the reference surface limit travel of the monolithic stage in the focus or Z direction. The single reference surface extends over the entire range of motion of the monolithic stage. This improves position accuracy, and cleaning and servicing of the apparatus. The modular nature of the monolithic stage permits easy removal for inspection and repair.

    摘要翻译: 电磁子级和电磁单片级耦合,使得一个接一个地具有位于它们之间的单个参考表面。 具有用于在X-Y方向上移动的线性电动机的子级通过U形支架安装到整体级。 整体级由平面电磁线圈悬挂,提供整体级的主体在X,Y,Z以及围绕Z轴或(θ)的旋转的精确运动。 跟随控制装置链接或跟踪单片级到子级的运动,使得单片级定位线圈在它们各自的磁性结构中居中。 可调节的机械止动件将整体式平台与空气轴承相结合,在整体级在焦点或Z方向的参考面极限行程上。 单个参考表面在整体级的整个运动范围上延伸。 这提高了位置精度,以及对设备的清洁和维护。 整体式台架的模块化特性允许拆卸检查和维修。

    Formulations for anaesthetic use
    6.
    发明申请
    Formulations for anaesthetic use 失效
    麻醉用制剂

    公开(公告)号:US20050004234A1

    公开(公告)日:2005-01-06

    申请号:US10833429

    申请日:2004-04-28

    IPC分类号: A61K31/05

    CPC分类号: A61K31/05

    摘要: A formulation for anaesthetic use is described. The formulation contains propofol, and may be used to induce and/or maintain anaesthesia or sedation in a vertebrae. The formulation additionally contains a solvent or a combination of solvents and is suitable for mixing with commonly used infusion fluids prior to injection in to a patient. The formulation may be terminally sterilised using moist heat in order to assure sterility, and contains no lipid, thereby avoiding complications associated with administration over prolonged periods of time, or to patients with disorders of fat metabolism.

    摘要翻译: 描述了用于麻醉剂的制剂。 制剂含有异丙酚,可用于诱导和/或维持椎骨中的麻醉或镇静作用。 制剂另外含有溶剂或溶剂的组合,并且在注射到患者体内之前适合与常用的输注液混合。 可以使用湿热对制剂进行终末灭菌,以确保无菌性,并且不含脂质,从而避免长时间施用相关的并发症或与脂肪代谢紊乱有关的患者。

    High speed reticle change system
    7.
    发明授权
    High speed reticle change system 失效
    高速掩模版更换系统

    公开(公告)号:US4760429A

    公开(公告)日:1988-07-26

    申请号:US927202

    申请日:1986-11-05

    申请人: Geoffrey O'Connor

    发明人: Geoffrey O'Connor

    摘要: Method and apparatus are disclosed for speeding up reticle changes during the production of semiconductor wafers under those circumstances wherein three reticles are employed, one (C) having a substantially longer exposure period than the others (A, B). The wafer is exposed to the reticles in the sequence ACB-BCA-ACB, etc.

    摘要翻译: 公开了用于在使用三个掩模版的情况下在半导体晶片的生产期间加速掩模版变化的方法和装置,一个(C)具有比其他掩模(A,B)大得多的曝光周期。 将晶片以ACB-BCA-ACB等顺序暴露于掩模版。