Bonding Silicon Silicon Carbide to Glass Ceramics
    2.
    发明申请
    Bonding Silicon Silicon Carbide to Glass Ceramics 失效
    将硅碳化硅结合到玻璃陶瓷

    公开(公告)号:US20100128242A1

    公开(公告)日:2010-05-27

    申请号:US12700049

    申请日:2010-02-04

    IPC分类号: B05D5/10 G03B27/58

    摘要: A wafer chuck for use in a lithographic apparatus, which includes a low-thermal expansion glass ceramic substrate, a silicon silicon carbide layer, and a bonding layer comprising silicate having a strength of at least about 5 megapascals, the bonding layer attaching the silicon silicon carbide layer to the substrate is described. Also, a method of forming a wafer chuck for use in a lithographic apparatus, which includes coating a portion of one or both of a low-thermal expansion glass ceramic substrate and a silicon silicon carbide layer with a bonding solution, and contacting the substrate and the silicon silicon carbide layer to bond the substrate and the silicon silicon carbide layer together is described.

    摘要翻译: 一种用于光刻设备的晶片卡盘,其包括低热膨胀玻璃陶瓷基板,硅碳化硅层和包括具有至少约5兆帕的强度的硅酸盐的粘合层,所述粘合层将硅硅 描述了到基底的碳化物层。 另外,一种形成用于光刻设备的晶片卡盘的方法,其包括用粘合溶液涂覆低热膨胀玻璃陶瓷基板和硅碳化硅中的一个或两个的一部分,并使基板和 描述了将基板和硅碳化硅层结合在一起的硅碳化硅层。

    Bonding silicon silicon carbide to glass ceramics
    3.
    发明授权
    Bonding silicon silicon carbide to glass ceramics 失效
    将硅碳化硅粘合到玻璃陶瓷上

    公开(公告)号:US07678458B2

    公开(公告)日:2010-03-16

    申请号:US11626747

    申请日:2007-01-24

    摘要: A wafer chuck for use in a lithographic apparatus, which includes a low-thermal expansion glass ceramic substrate, a silicon silicon carbide layer, and a bonding layer comprising silicate having a strength of at least about 5 megapascals, the bonding layer attaching the silicon silicon carbide layer to the substrate is described. Also, a method of forming a wafer chuck for use in a lithographic apparatus, which includes coating a portion of one or both of a low-thermal expansion glass ceramic substrate and a silicon silicon carbide layer with a bonding solution, and contacting the substrate and the silicon silicon carbide layer to bond the substrate and the silicon silicon carbide layer together is described.

    摘要翻译: 一种用于光刻设备的晶片卡盘,其包括低热膨胀玻璃陶瓷基板,硅碳化硅层和包括具有至少约5兆帕的强度的硅酸盐的粘合层,所述粘合层将硅硅 描述了到基底的碳化物层。 另外,一种形成用于光刻设备的晶片卡盘的方法,其包括用粘合溶液涂覆低热膨胀玻璃陶瓷基板和硅碳化硅中的一个或两个的一部分,并使基板和 描述了将基板和硅碳化硅层结合在一起的硅碳化硅层。

    Air infiltration prevention in buildings
    5.
    发明授权
    Air infiltration prevention in buildings 失效
    建筑物中的空气渗透预防

    公开(公告)号:US5910088A

    公开(公告)日:1999-06-08

    申请号:US90361

    申请日:1998-06-04

    IPC分类号: E04B1/26 E04B1/62 F04B1/66

    CPC分类号: E04B1/26 E04B1/62

    摘要: A method for reducing air infiltration in a building having a frame constructed with wooden components. Glue is applied to abutting wooden surfaces to provide a seal between such surfaces to prevent air flow between such surfaces.

    摘要翻译: 一种用于减少建筑物中的空气渗透的方法,其具有由木构件构成的框架。 将粘合剂施加到邻接的木制表面以在这些表面之间提供密封,以防止这些表面之间的空气流动。

    Bonding silicon silicon carbide to glass ceramics
    8.
    发明授权
    Bonding silicon silicon carbide to glass ceramics 失效
    将硅碳化硅粘合到玻璃陶瓷上

    公开(公告)号:US08168017B2

    公开(公告)日:2012-05-01

    申请号:US12700049

    申请日:2010-02-04

    摘要: A wafer chuck for use in a lithographic apparatus, which includes a low-thermal expansion glass ceramic substrate, a silicon silicon carbide layer, and a bonding layer comprising silicate having a strength of at least about 5 megapascals, the bonding layer attaching the silicon silicon carbide layer to the substrate is described. Also, a method of forming a wafer chuck for use in a lithographic apparatus, which includes coating a portion of one or both of a low-thermal expansion glass ceramic substrate and a silicon silicon carbide layer with a bonding solution, and contacting the substrate and the silicon silicon carbide layer to bond the substrate and the silicon silicon carbide layer together is described.

    摘要翻译: 一种用于光刻设备的晶片卡盘,其包括低热膨胀玻璃陶瓷基板,硅碳化硅层和包括具有至少约5兆帕的强度的硅酸盐的粘合层,所述粘合层将硅硅 描述了到基底的碳化物层。 另外,一种形成用于光刻设备的晶片卡盘的方法,其包括用粘合溶液涂覆低热膨胀玻璃陶瓷基板和硅碳化硅中的一个或两个的一部分,并使基板和 描述了将基板和硅碳化硅层结合在一起的硅碳化硅层。

    Bonding Silicon Silicon Carbide to Glass Ceramics
    9.
    发明申请
    Bonding Silicon Silicon Carbide to Glass Ceramics 失效
    将硅碳化硅结合到玻璃陶瓷

    公开(公告)号:US20080174054A1

    公开(公告)日:2008-07-24

    申请号:US11626747

    申请日:2007-01-24

    IPC分类号: B28B1/00

    摘要: A wafer chuck for use in a lithographic apparatus, which includes a low-thermal expansion glass ceramic substrate, a silicon silicon carbide layer, and a bonding layer comprising silicate having a strength of at least about 5 megapascals, the bonding layer attaching the silicon silicon carbide layer to the substrate is described. Also, a method of forming a wafer chuck for use in a lithographic apparatus, which includes coating a portion of one or both of a low-thermal expansion glass ceramic substrate and a silicon silicon carbide layer with a bonding solution, and contacting the substrate and the silicon silicon carbide layer to bond the substrate and the silicon silicon carbide layer together is described.

    摘要翻译: 一种用于光刻设备的晶片卡盘,其包括低热膨胀玻璃陶瓷基板,硅碳化硅层和包括具有至少约5兆帕的强度的硅酸盐的粘合层,所述粘合层将硅硅 描述了到基底的碳化物层。 另外,一种形成用于光刻设备的晶片卡盘的方法,其包括用粘合溶液涂覆低热膨胀玻璃陶瓷基板和硅碳化硅中的一个或两个的一部分,并使基板和 描述了将基板和硅碳化硅层结合在一起的硅碳化硅层。