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公开(公告)号：USD668136S1
公开(公告)日：2012-10-02
申请号：US29382780
申请日：2011-01-07
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公开(公告)号：US20120175330A1
公开(公告)日：2012-07-12
申请号：US12986256
申请日：2011-01-07
CPC分类号： A47B97/00 , A47B61/003 , A47F7/24 , B29C45/14065 , F16B45/00
摘要： A rod holder that for supporting a hanger rod in a shelving system. The hanger rod holder includes at least two materials, with a central plate that may be made of metal that may be substantially encapsulated in molded plastic. The hanger rod holder is mounted to a shelf bracket, and may be used with either solid or wire shelving systems. The low end of the holder engages a hanger rod, and may be configured to resiliently cradle the rod, with the rod being held in place in the holder by spreading the resilient ends of a C-shaped opening in the lower end of the holder.
摘要翻译： 用于在搁架系统中支撑衣架杆的杆架。 衣架杆保持器包括至少两种材料，其中心板可以由基本上封装在模制塑料中的金属制成。 衣架杆支架安装到搁架支架上，可与固体或线架系统一起使用。 保持器的低端接合衣架杆，并且可以被配置为弹性地摇动杆，杆通过将保持器的下端中的C形开口的弹性端部展开而保持在保持器中的适当位置。
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公开(公告)号：US20070004206A1
公开(公告)日：2007-01-04
申请号：US11467593
申请日：2006-08-28
申请人： Yun-Yu Wang , Richard Conti , Chung-Ping Eng , Matthew Nicholls
发明人： Yun-Yu Wang , Richard Conti , Chung-Ping Eng , Matthew Nicholls
CPC分类号： H01L21/76801 , H01L21/76832 , H01L21/76834 , H01L23/53228 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A cap nitride stack which prevents etch penetration to the HDP nitride while maintaining the electromigration benefits of HDP nitride atop Cu. In one embodiment, the stack comprises a first layer of HDP nitride and a second layer of a Si—C—H compound disposed over the first layer. The Si—C—H compound is for example BLoK, or N-BLoK (Si—C—H—N), and is selected from a group of materials that has high selectivity during via RIE such that RIE chemistry from the next wiring level does not punch through. Carbon and nitrogen are the key elements. In another embodiment, the stack comprises a first layer of HDP nitride, followed by a second layer of UVN (a plasma nitride), and a third layer comprising HDP nitride disposed over the second layer.
摘要翻译： 一种覆盖氮化物叠层，可以防止蚀刻渗透到HDP氮化物，同时保持在Cu顶部的HDP氮化物的电迁移效果。 在一个实施例中，堆叠包括第一层HDP氮化物和设置在第一层上的Si-C-H化合物的第二层。 Si-C-H化合物例如是BLoK或N-BLoK（Si-C-H-N），并且选自在通孔RIE期间具有高选择性的一组材料，使得来自下一个布线层的RIE化学不会穿透。 碳氮是关键要素。 在另一个实施例中，堆叠包括第一层HDP氮化物，随后是第二层UVN（等离子体氮化物），以及包含设置在第二层上的HDP氮化物的第三层。
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公开(公告)号：US20050110969A1
公开(公告)日：2005-05-26
申请号：US10707198
申请日：2003-11-26
CPC分类号： G03F7/70625 , G03F7/70633
摘要： The present invention provides photolithographic device and method for optimizing the photolithography process window. The photolithography device comprises a substrate; and a pattern layer having radiant energy transparent portions and radiant energy blocking portions, where the pattern layer has features with a varying overlay. The overlay tolerance is determined by varying the misalignment the features of the pattern. The photolithography device is a reticle. The method for determining an optimum photolithography process window comprises exposing a portion of a wafer to a pattern produced by a reticle, the pattern having a varying overlay that produces multiple photolithography conditions, wherein each photolithography condition has an overlay tolerance; and stepping the reticle across a remaining portion of the wafer, where each step exposes an other region of the wafer to the pattern producing multiple photolithography conditions. This process enables the user to determine the lithographic process window for critical dimension and overlay on a single chip using electrical test structures.
摘要翻译： 本发明提供了用于优化光刻工艺窗口的光刻设备和方法。 光刻装置包括基板; 以及具有辐射能透明部分和辐射能阻挡部分的图案层，其中图案层具有变化的覆盖层的特征。 覆盖公差通过改变图案的特征的不对准来确定。 光刻装置是光罩。 用于确定最佳光刻处理窗口的方法包括将晶片的一部分暴露于由掩模版产生的图案，该图案具有产生多个光刻条件的变化的覆盖层，其中每个光刻条件具有覆盖公差; 并且跨越晶片的剩余部分使掩模版步进，其中每个步骤将晶片的其它区域暴露于产生多个光刻条件的图案。 该过程使用户能够使用电气测试结构来确定关键尺寸的光刻工艺窗口并覆盖在单个芯片上。
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公开(公告)号：US20120273376A1
公开(公告)日：2012-11-01
申请号：US13096534
申请日：2011-04-28
摘要： A protector assembly includes a first shield segment defining a first blade space. The first shield segment includes a first channel structure defining a first channel facing the first blade space. The protector assembly further includes a second shield segment defining a second blade space. The second shield segment includes a second channel structure defining a second channel facing the second blade space. The first shield segment further includes (i) a first end portion that includes a first coupling structure, and (ii) a second end portion that includes a second coupling structure. The second shield segment further includes (i) a third end portion that includes a third coupling structure, and (ii) a fourth end portion that includes a fourth coupling structure. When the first end portion of the first shield segment is positioned adjacent to the third end portion of the second shield segment, the first coupling structure cooperates with the third coupling structure to couple the first end portion to the third end portion. When the second end portion of the first shield segment is positioned adjacent to the fourth end portion of the second shield segment, the second coupling structure cooperates with the fourth coupling structure to couple the second end portion to the fourth end portion.
摘要翻译： 保护器组件包括限定第一叶片空间的第一屏蔽段。 第一屏蔽段包括限定面向第一叶片空间的第一通道的第一通道结构。 保护器组件还包括限定第二叶片空间的第二屏蔽段。 第二屏蔽段包括限定面向第二叶片空间的第二通道的第二通道结构。 第一屏蔽段还包括（i）包括第一耦合结构的第一端部，和（ii）包括第二耦合结构的第二端部。 第二屏蔽段还包括（i）包括第三耦合结构的第三端部，和（ii）包括第四耦合结构的第四端部。 当第一屏蔽段的第一端部邻近第二屏蔽段的第三端部分定位时，第一耦合结构与第三耦合结构配合以将第一端部部分耦合到第三端部。 当第一屏蔽段的第二端部位于第二屏蔽段的第四端部附近时，第二耦合结构与第四耦合结构协作以将第二端部耦合到第四端部。
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公开(公告)号：US20060113672A1
公开(公告)日：2006-06-01
申请号：US10904827
申请日：2004-12-01
申请人： Yun-Yu Wang , Richard Conti , Chung-Ping Eng , Matthew Nicholls
发明人： Yun-Yu Wang , Richard Conti , Chung-Ping Eng , Matthew Nicholls
CPC分类号： H01L21/76801 , H01L21/76832 , H01L21/76834 , H01L23/53228 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A cap nitride stack which prevents etch penetration to the HDP nitride while maintaining the electromigration benefits of HDP nitride atop Cu. In one embodiment, the stack comprises a first layer of HDP nitride and a second layer of a Si—C—H compound disposed over the first layer. The Si—C—H compound is for example BLoK, or N-BLoK (Si—C—H—N), and is selected from a group of materials that has high selectivity during via RIE such that RIE chemistry from the next wiring level does not punch through. Carbon and nitrogen are the key elements. In another embodiment, the stack comprises a first layer of HDP nitride, followed by a second layer of UVN (a plasma nitride), and a third layer comprising HDP nitride disposed over the second layer.
摘要翻译： 一种覆盖氮化物叠层，可以防止蚀刻渗透到HDP氮化物，同时保持在Cu顶部的HDP氮化物的电迁移效果。 在一个实施例中，堆叠包括第一层HDP氮化物和设置在第一层上的Si-C-H化合物的第二层。 Si-C-H化合物例如是BLoK或N-BLoK（Si-C-H-N），并且选自在通孔RIE期间具有高选择性的一组材料，使得来自下一个布线层的RIE化学不会穿透。 碳氮是关键要素。 在另一个实施例中，堆叠包括第一层HDP氮化物，随后是第二层UVN（等离子体氮化物），以及包含设置在第二层上的HDP氮化物的第三层。
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公开(公告)号：US08746451B2
公开(公告)日：2014-06-10
申请号：US13096534
申请日：2011-04-28
IPC分类号： A45C11/26
摘要： A protector assembly includes a first shield segment defining a first blade space. The first shield segment includes a first channel structure defining a first channel facing the first blade space. The protector assembly further includes a second shield segment defining a second blade space. The second shield segment includes a second channel structure defining a second channel facing the second blade space. The first shield segment further includes (i) a first end portion that includes a first coupling structure, and (ii) a second end portion that includes a second coupling structure. The second shield segment further includes (i) a third end portion that includes a third coupling structure, and (ii) a fourth end portion that includes a fourth coupling structure. When the first end portion of the first shield segment is positioned adjacent to the third end portion of the second shield segment, the first coupling structure cooperates with the third coupling structure to couple the first end portion to the third end portion. When the second end portion of the first shield segment is positioned adjacent to the fourth end portion of the second shield segment, the second coupling structure cooperates with the fourth coupling structure to couple the second end portion to the fourth end portion.
摘要翻译： 保护器组件包括限定第一叶片空间的第一屏蔽段。 第一屏蔽段包括限定面向第一叶片空间的第一通道的第一通道结构。 保护器组件还包括限定第二叶片空间的第二屏蔽段。 第二屏蔽段包括限定面向第二叶片空间的第二通道的第二通道结构。 第一屏蔽段还包括（i）包括第一耦合结构的第一端部，和（ii）包括第二耦合结构的第二端部。 第二屏蔽段还包括（i）包括第三耦合结构的第三端部，和（ii）包括第四耦合结构的第四端部。 当第一屏蔽段的第一端部邻近第二屏蔽段的第三端部分定位时，第一耦合结构与第三耦合结构配合以将第一端部部分耦合到第三端部。 当第一屏蔽段的第二端部位于第二屏蔽段的第四端部附近时，第二耦合结构与第四耦合结构协作以将第二端部耦合到第四端部。
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公开(公告)号：US20050181288A1
公开(公告)日：2005-08-18
申请号：US11028888
申请日：2005-01-04
CPC分类号： G03F7/70625 , G03F7/70633
摘要： The present invention provides photolithographic device and method for photolithography process window. The photolithography device comprises a substrate; and a pattern layer having radiant energy transparent portions and radiant energy blocking portions, where the pattern layer has features with a varying overlay. The overlay tolerance is determined by varying the misalignment the features of the pattern. The photolithography device is a reticle. The method for determining an optimum photolithography process window comprises exposing a portion of a wafer to a pattern produced by a reticle, the pattern having a varying overlay that produces multiple photolithography conditions, wherein each photolithography condition has an overlay tolerance; and stepping the reticle across a remaining portion of the wafer, where each step exposes an other region of the wafer to the pattern producing multiple photolithography conditions. This process enables the user to determine the lithographic process window for critical dimension and overlay on a single chip using electrical test structures.
摘要翻译： 本发明提供了光刻工艺窗口的光刻设备和方法。 光刻装置包括基板; 以及具有辐射能透明部分和辐射能阻挡部分的图案层，其中图案层具有变化的覆盖层的特征。 覆盖公差通过改变图案的特征的不对准来确定。 光刻装置是光罩。 用于确定最佳光刻处理窗口的方法包括将晶片的一部分暴露于由掩模版产生的图案，该图案具有产生多个光刻条件的变化的覆盖层，其中每个光刻条件具有覆盖公差; 并且跨越晶片的剩余部分使掩模版步进，其中每个步骤将晶片的其它区域暴露于产生多个光刻条件的图案。 该过程使用户能够使用电气测试结构来确定关键尺寸的光刻工艺窗口并覆盖在单个芯片上。
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