Selective deposition method
    1.
    发明申请
    Selective deposition method 审中-公开
    选择性沉积法

    公开(公告)号:US20080173917A1

    公开(公告)日:2008-07-24

    申请号:US11655664

    申请日:2007-01-19

    IPC分类号: H01L27/108 H01L21/334

    CPC分类号: H01L29/66181 H01L27/1087

    摘要: The invention relates to a deposition method performing the following steps. A substrate is provided which is structured to comprise a first surface and a second surface, which differ in at least one of geometric orientation and vertical distance to a principle surface of the substrate. An etchable layer is deposited on the first surface via an atomic layer deposition technique the deposition technique using a first precursor supplied in an amount sufficient to cover at least parts of the first surface and insufficient to cover the second surface, the first precursor being supplied from a direction to pass the first surface before the second surface. A dielectric layer of at least one of a transition metal oxide and a transition metal nitride is deposited on at least the second surface via an atomic layer deposition technique using a second precursor.

    摘要翻译: 本发明涉及一种执行以下步骤的沉积方法。 提供了一种衬底,其被构造成包括第一表面和第二表面,所述第一表面和第二表面在基底的主要表面的几何取向和垂直距离中的至少一个方面不同。 可蚀刻层通过原子层沉积技术沉积在第一表面上,沉积技术使用以足以覆盖第一表面的至少一部分并且不足以覆盖第二表面的量供应的第一前体,第一前体从 在第二表面之前通过第一表面的方向。 过渡金属氧化物和过渡金属氮化物中的至少一种的电介质层通过使用第二前体的原子层沉积技术沉积在至少第二表面上。

    Peltier cooling systems with high aspect ratio
    7.
    发明申请
    Peltier cooling systems with high aspect ratio 审中-公开
    珀耳帖冷却系统具有高纵横比

    公开(公告)号:US20060107986A1

    公开(公告)日:2006-05-25

    申请号:US11316178

    申请日:2005-12-22

    IPC分类号: H01L35/34 H01L35/28

    摘要: New Peltier semiconductor heat transfer systems are presented herein. In particular, Peltier heat transfer systems of Peltier semiconductor elements of highly unique shape are arranged to bias the cooling side with respect to its size and consequently performance. In effect, a Peltier heat transfer system is created whereby the Peltier called side is greatly reduced in size and the Peltier hot side is greatly expanded in size. Such ‘high aspect ratio’ Peltier systems promote ‘focused’ cooling effect, which is particularly useful in conjunction with high-performance electronic devices having a small footprint. The entire cooling a fact of the Peltier device is brought to the small space approximated by a point. Thus a ‘point’ heat source such as a semiconductor laser are high-performance light emitting diode is more effectively cooled by these systems.

    摘要翻译: 本文介绍了新的珀尔帖半导体传热系统。 特别地,具有高度独特形状的珀尔帖半导体元件的珀尔帖传热系统被布置成相对于其尺寸和性能而偏向冷却侧。 实际上,产生了珀尔贴式传热系统,由此珀尔帖被称为侧面大大减小,珀尔帖热侧的尺寸大大扩大。 这样的“高宽比”珀尔帖系统提高了“集中”的冷却效果,这与具有小占地面积的高性能电子设备相结合尤为有用。 将珀尔帖装置的整个冷却事实带到由点附近的小空间。 因此,诸如半导体激光器的“点”热源是由这些系统更有效地冷却的高性能发光二极管。

    HETEROCYCLIC COMPOUNDS USEFUL AS STEAROYL CoA DESATURASE INHIBITORS
    9.
    发明申请
    HETEROCYCLIC COMPOUNDS USEFUL AS STEAROYL CoA DESATURASE INHIBITORS 审中-公开
    杂环化合物作为硬脂酸CoA去饱和酶抑制剂有用

    公开(公告)号:US20100267748A1

    公开(公告)日:2010-10-21

    申请号:US12579139

    申请日:2009-10-14

    CPC分类号: C07D487/04

    摘要: The present invention discloses 1H-pyrido[1,2-a]pyrimidin-4(9aH)-one derivatives or 1H-pyrimido[1,2-a]pyrimidin-4(9aH)-one derivatives for use as inhibitors of stearoyl-CoA desaturase having the structure of Formula I: The compounds are useful in treating and/or preventing various human diseases mediated by stearoyl-CoA desaturase (SCD) enzymes, especially diseases related to abnormal lipid levels, cardiovascular disease, cancer, diabetes, obesity, metabolic syndrome and the like.

    摘要翻译: 本发明公开了用作硬脂酰基-β-酮衍生物抑制剂的1H-吡啶并[1,2-a]嘧啶-4(9aH) - 酮衍生物或1H-嘧啶并[1,2-a]嘧啶-4(9aH) 具有式I结构的CoA去饱和酶:该化合物可用于治疗和/或预防由硬脂酰辅酶A去饱和酶(SCD)酶介导的各种人类疾病,特别是与异常脂质水平,心血管疾病,癌症,糖尿病,肥胖症, 代谢综合征等。