摘要:
Optical amplifiers are provided in which optical gain is produced by Raman pumping fiber. The Raman-pumped fiber may be a span of transmission fiber or a coil of fiber in a discrete amplifier. Raman pump light may be provided using laser diodes operating at different wavelengths. The Raman pump light that is produced by the laser diodes may be modulated to reduce pump interactions in the fiber. Raman pump light may be modulated by directly modulating the laser diodes or by using optical components that modulate constant power pump light from the laser diodes.
摘要:
Distributed Raman amplifier systems are provided in which gain transients are controlled. Signal taps may be used to monitor optical signal powers at network nodes. A telemetry channel may be used to share information between nodes. Information on the output power of a given node may be passed to a subsequent node using the telemetry channel. The subsequent node may use feed-forward and feedback control schemes to control Raman gain transients in the preceding transmission fiber span based on the output power information received over the telemetry channel.
摘要:
Optical amplifiers are provided that have dispersion-compensating fiber that is pumped with an optical source to produce Raman gain. Removable modules of dispersion-compensating fiber, which may be separate from the Raman-pumped dispersion-compensating fiber, may be used to adjust the amount of dispersion compensation provided by a given amplifier. The Raman pump may be formed using fiber-Bragg-grating-stabilized diode lasers or other suitable pump sources. Two cross-polarized diode lasers may be used for the Raman pump to reduce the dependence of the Raman gain on the polarization of the pump. If desired, the dispersion-compensating fiber may be Raman pumped using a two-pass configuration in which pump light reflects off of a reflector to produce additional gain. The reflector may be a Faraday rotator to minimize polarization-dependent pump effects.
摘要:
Fiber-optic communications systems are provided for optical communications networks. Fiber-optic communications links may be provided that use spans of transmission fiber to carry optical data signals on wavelength-division-multiplexing channels at different wavelengths. Raman pump light may be used to provide Raman amplification for the optical data signals. The Raman pump light may be used to make measurements on the spans of transmission fiber. Raman pump light may be modulated to make optical time domain reflectometry measurements and measurements of the Raman gain coefficient in the fiber. Information on the measurements made using the Raman pump light may be used to control the Raman pump light during operation of the communications link and may be provided to a network management system.
摘要:
Raman amplifier equipment for fiber-optic communications links is provided. Raman pump light at a first wavelength or wavelengths may be used to optically pump fiber in a communications link to produce Raman gain. Raman pump light at a second wavelength or wavelengths may be used to optically pump the fiber to produce Raman gain for channels at different wavelengths in the communications link. The Raman gain produced by the pump light at the first wavelength or wavelengths increases the reach of the Raman pump light at the second wavelength or wavelengths into the fiber to improve the noise figure of the amplifier.
摘要:
An electronic fabric can include a first fabric layer, a second fabric layer, and a plurality of electronic devices. The first fabric layer can include a first set of conductive wires extending longitudinally in a first direction. The second fabric layer can define a plurality of apertures, can include a second set of conductive wires extending longitudinally in a second direction, and can be coupled to the first fabric layer such that each of the first set of conductive wires is arranged at a location of one of the plurality of apertures. Each electronic device can have a first terminal electrically coupled with one of the first set of conductive wires and a second terminal electrically coupled to one of the second set of conductive wires. The first terminal can be electrically coupled with the one of the first set of conductive wires through one of the plurality of apertures.
摘要:
A method of forming a three-dimensional electronic device includes forming at least one electronic device on a two-dimensional, flexible substrate, the electronic device being formed according to a three-dimensional structure, cutting the two-dimensional, flexible substrate, the cuts being located to allow the two-dimensional substrate to be shaped, the cuts having at least one stress relief feature, and shaping the two-dimensional, flexible substrate to form the three-dimensional structure, the stress relief features arranged to alleviate stress in the three-dimensional structure. A method of forming a three-dimensional electronic device includes forming at least one electronic device on a two-dimensional, flexible substrate, the electronic device being formed according to a three-dimensional structure, cutting the two-dimensional, flexible substrate, the cuts being arranged to as to increase a radius of curvature to meet a stress relief parameter when the substrate is shaped, and shaping the two-dimensional, flexible substrate to form the three-dimensional structure. A three-dimensional electronic device having an electronic device formed on a flexible substrate, the flexible substrate formed into a three-dimensional structure, wedged-shaped portions removed from the substrate to allow the substrate to be formed into the three-dimensional structure, and a stress relief feature arranged adjacent to the wedge-shaped portions.
摘要:
A pixel circuit including a first transistor; a second transistor, the first transistor and the second transistor serially coupled between a first power supply terminal and a second power supply terminal; and a first capacitor coupled between a gate of the first transistor and a gate of the second transistor, and an electronic sheet including the same.
摘要:
A multivariable solver for proximity correction uses a Jacobian matrix to approximate effects of perturbations of segment locations in successive iterations of a design loop. The problem is formulated as a constrained minimization problem with box, linear equality, and linear inequality constraints. To improve computational efficiency, non-local interactions are ignored, which results in a sparse Jacobian matrix.
摘要:
A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.
摘要翻译:在GaN /蓝宝石模板结构上形成GaN / AlN超晶格,其部分作为用于后续层(例如深UV发光二极管)生长的应变消除层。 GaN / AlN超晶格减轻GaN /蓝宝石模板和多量子阱异质结构有源区之间的应变,允许在有源区中使用高Al摩尔分数,从而在深紫外波长中发射。