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公开(公告)号：US08137900B2
公开(公告)日：2012-03-20
申请号：US12120616
申请日：2008-05-14
申请人： Naveen Chopra , Jurgen H. Daniel , Brent S. Krusor , San-Ming Yang , Peter M. Kazmaier , Gabriel Iftime
发明人： Naveen Chopra , Jurgen H. Daniel , Brent S. Krusor , San-Ming Yang , Peter M. Kazmaier , Gabriel Iftime
IPC分类号： G03F7/20
CPC分类号： G02F1/167 , G02F2001/1672
摘要： An electrophoretic display device includes a multiplicity of individual reservoirs containing a display medium between conductive substrates, at least one of which is transparent, wherein the display medium includes one or more set of colored particles in a dielectric fluid, and wherein the multiplicity of individual reservoirs are defined by a unitary grid whose walls segregate the reservoirs. The gird may be formed via photolithography or from a master stamp derived from a mold of the grid pattern.
摘要翻译： 电泳显示装置包括多个单独的储存器，其中包含导电基板之间的显示介质，其中至少一个是透明的，其中显示介质包括介电流体中的一组或多组有色颗粒，并且其中多个单独储存器 由其墙壁隔离储层的单一网格限定。 网格可以通过光刻法或来自网格图案的模具的主印章形成。
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公开(公告)号：US07403325B2
公开(公告)日：2008-07-22
申请号：US11419471
申请日：2006-05-19
申请人： Naveen Chopra , Jurgen H. Daniel , Brent S. Krusor , San-Ming Yang , Peter M. Kazmaier , Gabriel Iftime
发明人： Naveen Chopra , Jurgen H. Daniel , Brent S. Krusor , San-Ming Yang , Peter M. Kazmaier , Gabriel Iftime
CPC分类号： G02F1/167 , G02F2001/1672
摘要： An electrophoretic display device includes a multiplicity of individual reservoirs containing a display medium between conductive substrates, at least one of which is transparent, wherein the display medium includes one or more set of colored particles in a dielectric fluid and has an electrical conductivity of about 10−11 to about 10−15 S/m, and wherein the multiplicity of individual reservoirs are defined by a unitary grid whose walls segregate the reservoirs. The grid may be formed via photolithography or from a master stamp derived from a mold of the grid pattern.
摘要翻译： 电泳显示装置包括多个单独的储存器，其在导电基板之间包含显示介质，其中至少一个是透明的，其中显示介质包括介电流体中的一组或多组着色颗粒，并且具有约10的电导率 -11至约10 -15 S / m，并且其中多个单独储存器由其墙壁隔离储存器的整体网格限定。 网格可以通过光刻法或从源自网格图案的模具的母版形成。
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公开(公告)号：US07288327B2
公开(公告)日：2007-10-30
申请号：US11014357
申请日：2004-12-16
申请人： Jurgen Daniel , Brent S. Krusor , Alexandra Rodkin , John S Fitch
发明人： Jurgen Daniel , Brent S. Krusor , Alexandra Rodkin , John S Fitch
CPC分类号： B81C1/00111 , B81B2201/0257 , B81B2201/058 , C23C18/1605 , C25D5/022 , Y10S428/935 , Y10T428/12361 , Y10T428/12375 , Y10T428/12382 , Y10T428/12389
摘要： Various structures or components can include plated surfaces or other parts. For example, an article can include a base and a plated part with a limit artifact that results from plating adjacent a non-plateable surface; the limit artifact can be disposed away from the base. Exemplary limit artifacts include lack of protrusions, smooth upper surfaces, and curved surfaces, where a curved surface can transition between a smooth upper surface and an irregular side surface. Exemplary plated structures can be tube-shaped or cup-shaped, with an opening at a top end and, around the opening, a lip with a limit artifact. Wall-like structures can similarly have limit artifacts at their top end. If plating on a mold's side surface, the non-plateable surface can be the lower surface of an overhanging polymer disk or structure positioned on the mold. Plated tubes and wall-like structures can be employed in microfluidic structures.
摘要翻译： 各种结构或部件可以包括电镀表面或其它部件。 例如，制品可以包括基部和具有极限伪影的电镀部分，其由邻近不可平板表面的电镀产生; 极限伪影可以远离基座放置。 示例性极限瑕疵包括缺少突起，平滑的上表面和弯曲表面，其中弯曲表面可以在光滑的上表面和不规则的侧表面之间转变。 示例性的镀覆结构可以是管状或杯形，在顶端具有开口，并且在开口周围具有极限伪影的唇部。 壁状结构在其顶端可以类似地具有极限伪影。 如果在模具的侧表面上进行电镀，则不平板表面可以是位于模具上的突出聚合物盘或结构的下表面。 电镀管和壁状结构可用于微流体结构。
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4.发明授权公开(公告)号：US06597717B1
公开(公告)日：2003-07-22
申请号：US09443172
申请日：1999-11-19
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/2214 , H01S5/222 , H01S5/2227 , H01S5/2231 , H01S5/34333
摘要： An inner stripe laser diode structure for GaN laser diodes is disclosed. Inner stripe laser diode structures provide a convenient means of achieving low threshold, single mode laser diodes. The structure of an inner stripe laser diode is modified to produce lateral index guiding.
摘要翻译： 公开了一种用于GaN激光二极管的内条激光二极管结构。 内部条纹激光二极管结构提供了实现低阈值单模激光二极管的便利手段。 修改内部条纹激光二极管的结构以产生横向折射率引导。
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公开(公告)号：US20100096729A1
公开(公告)日：2010-04-22
申请号：US12253390
申请日：2008-10-17
IPC分类号： H01L23/544 , H01L21/00
CPC分类号： H05K3/0044 , G02F2201/56 , H01L27/14603 , H01L27/14692 , H01L27/14812 , H01L29/78603
摘要： A method of forming a three-dimensional electronic device includes forming at least one electronic device on a two-dimensional, flexible substrate, the electronic device being formed according to a three-dimensional structure, cutting the two-dimensional, flexible substrate, the cuts being located to allow the two-dimensional substrate to be shaped, the cuts having at least one stress relief feature, and shaping the two-dimensional, flexible substrate to form the three-dimensional structure, the stress relief features arranged to alleviate stress in the three-dimensional structure. A method of forming a three-dimensional electronic device includes forming at least one electronic device on a two-dimensional, flexible substrate, the electronic device being formed according to a three-dimensional structure, cutting the two-dimensional, flexible substrate, the cuts being arranged to as to increase a radius of curvature to meet a stress relief parameter when the substrate is shaped, and shaping the two-dimensional, flexible substrate to form the three-dimensional structure. A three-dimensional electronic device having an electronic device formed on a flexible substrate, the flexible substrate formed into a three-dimensional structure, wedged-shaped portions removed from the substrate to allow the substrate to be formed into the three-dimensional structure, and a stress relief feature arranged adjacent to the wedge-shaped portions.
摘要翻译： 形成三维电子器件的方法包括在二维柔性基板上形成至少一个电子器件，该电子器件根据三维结构形成，切割二维柔性基片，切割 定位成允许二维基底成形，切口具有至少一个应力消除特征，并且成形二维柔性基底以形成三维结构，应力消除特征被设置为减轻二维基底中的应力 三维结构。 形成三维电子器件的方法包括在二维柔性基板上形成至少一个电子器件，该电子器件根据三维结构形成，切割二维柔性基片，切割 被布置成当基底成形时增加曲率半径以满足应力消除参数，并且将二维柔性基底成形以形成三维结构。 一种具有形成在柔性基板上的电子器件的三维电子器件，形成为三维结构的柔性衬底，从衬底移除楔形部分以使衬底形成三维结构;以及 紧邻楔形部分布置的应力消除特征。
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公开(公告)号：US07082684B2
公开(公告)日：2006-08-01
申请号：US10912418
申请日：2004-08-04
申请人： Thomas Hantschel , Brent S. Krusor
发明人： Thomas Hantschel , Brent S. Krusor
IPC分类号： H01R43/16
CPC分类号： G01R3/00 , G01R1/06727 , G01R1/07342 , H01L24/72 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01009 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01046 , H01L2924/01049 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/30107 , H05K3/4092 , Y10T29/49204
摘要： A spring structure in which the transition of a metal layer from a solid solution to an intermetallic compound is utilized either to bend a spring finger into a curved shape, or to increase the yield point of the spring finger. The spring finger has an anchor portion attached to a substrate, and a cantilever portion extending over the substrate surface. The metal layer forms at least a portion of the spring finger. The metal layer is initially formed as a solid solution including a primary and secondary elements that transform to an intermetallic compound upon annealing, thereby generating a bending force that causes the cantilever portion of the spring finger to bend relative to the substrate, and/or to increase the yield point of the bent cantilever portion. The metal layer is formed by plating and/or sputtering, and annealing is performed before and/or after release of the cantilever portion.
摘要翻译： 使用金属层从固溶体向金属间化合物的过渡而将弹簧指弯曲成弯曲形状或增加弹簧指的屈服点的弹簧结构。 弹簧指具有附接到基底的锚定部分和在基底表面上延伸的悬臂部分。 金属层形成弹簧指的至少一部分。 金属层最初形成为包括在退火时转变为金属间化合物的主要元素和次要元素的固溶体，从而产生使弹簧指的悬臂部分相对于基底弯曲的弯曲力，和/或 增加弯曲悬臂部分的屈服点。 通过电镀和/或溅射形成金属层，并且在释放悬臂部分之前和/或之后进行退火。
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公开(公告)号：US09335262B2
公开(公告)日：2016-05-10
申请号：US13217859
申请日：2011-08-25
IPC分类号： G01N21/41 , H01S5/00 , H01S3/08 , H01L29/06 , H01L21/00 , G02B5/08 , B82Y20/00 , H01S5/183 , H01S5/343
CPC分类号： H01S5/18363 , B82Y20/00 , G01N21/17 , G01N21/41 , G01N2201/0635 , G01N2201/08 , G02B5/0816 , G02B5/085 , H01S5/18308 , H01S5/18341 , H01S5/18369 , H01S5/18377 , H01S5/34333 , H01S2304/04
摘要： A device includes one or more reflector components. Each reflector component comprises layer pairs of epitaxially grown reflective layers and layers of a non-epitaxial material, such as air. Vias extend through at least some of the layers of the reflector components. The device may include a light emitting layer.
摘要翻译： 装置包括一个或多个反射器部件。 每个反射器组件包括外延生长反射层的层对和非外延材料（例如空气）的层。 通孔延伸穿过反射器部件的至少一些层。 该装置可以包括发光层。
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公开(公告)号：US09064980B2
公开(公告)日：2015-06-23
申请号：US13217844
申请日：2011-08-25
CPC分类号： H01L33/0079 , H01L2224/48091 , H01L2224/48465 , H01L2224/73257 , Y10T428/24802 , H01L2924/00014
摘要： One or more layers are epitaxially grown on a bulk crystalline AlN substrate. The epitaxial layers include a surface which is the initial surface of epitaxial growth of the epitaxial layers. The AlN substrate is substantially removed over a majority of the initial surface of epitaxial growth.
摘要翻译： 在本体结晶AlN衬底上外延生长一层或多层。 外延层包括作为外延层的外延生长的初始表面的表面。 在外延生长的初始表面的大部分上基本上去除了AlN衬底。
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公开(公告)号：US20130050686A1
公开(公告)日：2013-02-28
申请号：US13217859
申请日：2011-08-25
CPC分类号： H01S5/18363 , B82Y20/00 , G01N21/17 , G01N21/41 , G01N2201/0635 , G01N2201/08 , G02B5/0816 , G02B5/085 , H01S5/18308 , H01S5/18341 , H01S5/18369 , H01S5/18377 , H01S5/34333 , H01S2304/04
摘要： A device includes one or more reflector components. Each reflector component comprises layer pairs of epitaxially grown reflective layers and layers of a non-epitaxial material, such as air. Vias extend through at least some of the layers of the reflector components. The device may include a light emitting layer.
摘要翻译： 装置包括一个或多个反射器部件。 每个反射器组件包括外延生长反射层的层对和非外延材料（例如空气）的层。 通孔延伸穿过反射器部件的至少一些层。 该装置可以包括发光层。
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公开(公告)号：US20130052758A1
公开(公告)日：2013-02-28
申请号：US13217821
申请日：2011-08-25
CPC分类号： H01L22/26 , H01L21/67086 , H01L21/67253 , H01L22/12 , H01L33/0079
摘要： Approaches for substantially removing bulk aluminum nitride (AlN) from one or more layers epitaxially grown on the bulk AlN are discussed. The bulk AlN is exposed to an etchant during an etching process. During the etching process, the thickness of the bulk AlN can be measured and used to control etching.
摘要翻译： 讨论了从体积AlN上外延生长的一层或多层基本上去除块状氮化铝（AlN）的方法。 在蚀刻过程中，大块AlN暴露于蚀刻剂。 在蚀刻过程中，可以测量体积AlN的厚度并用于控制蚀刻。
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