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1.发明授权Process for the manufacture of group III nitride targets for use in sputtering and similar equipment 失效用于制造用于溅射和类似设备的III族氮化物靶的工艺
公开(公告)号：US6113985A
公开(公告)日：2000-09-05
申请号：US300053
申请日：1999-04-27
CPC分类号： C23C16/303 , C23C14/3414
摘要： Using a GaN growth furnace, at least three different techniques can be used for forming the targets for the deposition of thin films. In the first, nitrides can be deposited as a dense coating on a target backing plate for use as a target. In this approach, the backing plate is placed near the Group III metal. During processing, the Group III metal or metal halide vaporizes and reacts with the nitrogen source to deposit a dense polycrystalline layer on the backing plate. To build up a thick layer on the backing plate, the backing plate is repeatedly placed in the processing furnace until a satisfactory thickness is attained. For the second approach, a properly shaped reaction vessel, the dense, thick Group III nitride crust that forms on top of the Group III metal during the process can be used directly or mechanically altered to meet the size requirements for a sputtering target holder. As a third approach, the Group III nitride material can be ground into a fine powder using traditional ceramic powder processing methods and then pressed to consolidate the powder into a sputtering target. The third processing option would typically lead to a low density target; however, this "green" compact can then be reinserted into the same processing apparatus that the original powder was synthesized to infiltrate the open pores with the same or another group III metal nitride. This would produce a high density, thick target.
摘要翻译： 使用GaN生长炉，可以使用至少三种不同的技术来形成用于沉积薄膜的靶。 首先，可以将氮化物作为致密涂层沉积在目标背板上以用作靶。 在这种方法中，背板放置在III族金属附近。 在加工过程中，III族金属或金属卤化物蒸发并与氮源反应，以在背板上沉积致密的多晶层。 为了在背板上建立厚层，将背板重复放置在处理炉中，直到达到令人满意的厚度。 对于第二种方法，适当成形的反应容器，在工艺过程中形成在III族金属顶部上的致密，厚的III族氮化物外壳可直接或机械地改变以满足溅射靶架的尺寸要求。 作为第三种方法，可以使用传统的陶瓷粉末处理方法将III族氮化物材料研磨成细粉末，然后压制以将粉末固结成溅射靶。 第三种处理方案通常会导致低密度目标; 然而，这种“绿色”压块然后可以重新插入与原始粉末合成以相同或另一III族金属氮化物渗透开孔的相同处理装置中。 这将产生高密度，厚的目标。
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公开(公告)号：US06406540B1
公开(公告)日：2002-06-18
申请号：US09299928
申请日：1999-04-27
IPC分类号： C30B2306
CPC分类号： C30B25/00 , C23C16/303 , C23C16/34 , C23C16/448 , C30B25/02 , C30B29/38 , C30B29/403 , C30B29/406
摘要： This invention provides a process and apparatus for producing products of M-nitride materials wherein M=gallium (GaN), aluminum (AlN), indium (InN), germanium (GeN), zinc (ZnN) and ternary nitrides and alloys such as zinc germanium nitride or indium aluminum gallium nitride. This process and apparatus produce either free-standing single crystals, or deposit layers on a substrate by epitaxial growth or polycrystalline deposition. Also high purity M-nitride powders may be synthesized. The process uses an ammonium halide such as ammonium chloride, ammonium bromide or ammonium iodide and a metal to combine to form the M-nitride which deposits in a cooler region downstream from and/or immediately adjacent to the reaction area. High purity M-nitride can be nucleated from the vapor to form single crystals or deposited on a suitable substrate as a high density material. High purity M-nitride single crystals can be grown by the direct reaction of the halide with the M-metal in a range of sizes from a few micrometers to centimeters, depending on the growth conditions. The small sized crystals are recovered as high purity M-nitride powder while the larger crystals can be prepared as substrates for electronic devices or UV/blue/green emitting diodes and lasers. The deposited layers can be used as M-nitride substrates, or targets for pulsed laser deposition (PLD), or other systems requiring high density targets. The deposition process, and subsequent density of the resulting component, is controlled by the reaction medium and by adjusting the temperature of the ammonium halide in an area near but separate from the reaction zone. Thickness of deposition on the substrates by the same process involves placement of the substrates in a suitable area in the reaction chamber and may be further controlled by the use of nitrogen, nitrogen-hydrogen mixtures or other suitable controlling gas to facilitate uniform distribution of the layer.
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3.发明授权
公开(公告)号：US5544615A
公开(公告)日：1996-08-13
申请号：US282869
申请日：1994-07-29
摘要： New single crystals of ZnGeP.sub.2 are grown by a chemical vapor transport process from bulk synthesized polycrystalline ZnGeP.sub.2 using the LEK process with a controlled injection of phosphorus. The synthesis of the bulk is based on direct injection of phosphorus through a B.sub.2 O.sub.3 encapsulant and reaction with the zinc germanium melt, resulting in synthesis of a large melt (350 g) of ZnGeP.sub.2. When crystallization is followed by cooling the congruent melt down through the .alpha.-.beta. transition temperature (952.degree. C.) as is typical for bulk growth processes, the result is the growth of partially disordered material. This material is placed in a two zone heated furnace where iodine is used to transport the intermediate product to the growth zone where the single crystals grow, at a temperature below the .alpha.-.beta. phase transition. The resulting crystals produced contained a second cubic phase, which has not been reported previously.
摘要翻译： ZnGeP2的新型单晶通过化学气相传输方法从大量合成的多晶ZnGeP2生长，使用LEK方法，控制注入磷。 本体的合成基于通过B2O3密封剂直接注入磷并与锌锗熔体反应，导致合成大量的熔融物（350g）的ZnGeP2。 当结晶化之后，将一致的熔体冷却通过α-β转变温度（952℃），如通常的体积生长过程所示，结果是部分无序材料的生长。 将该材料放置在双区加热炉中，其中使用碘在低于α-β相变的温度下将中间产物运输到单晶生长的生长区。 产生的所得晶体含有第二立方相，其以前尚未报道。
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4.发明授权Process of making high quality single quartz crystal using silica glass nutrient 失效使用石英玻璃营养制造高品质单晶石英晶体的工艺
公开(公告)号：US4956047A
公开(公告)日：1990-09-11
申请号：US229686
申请日：1988-08-08
IPC分类号： C30B7/00
CPC分类号： C30B7/00 , C30B29/18 , Y10S117/90 , Y10T117/1096
摘要： Ultra high pure quartz is grown by a one step in-situ growth process where the nutrient is high purity silica. A negative temperature gradient is maintained between the nutrient zone and the seed zone until about the start of crystal growth. A sealable container made of silver contains the nutrient and the seed within the autoclave chamber.
摘要翻译： 超高纯石英通过一步原位生长过程生长，其中营养物是高纯度二氧化硅。 在营养区和种子区之间保持负温度梯度，直到晶体生长开始。 由银制成的可密封容器包含高压釜室内的营养物和种子。
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公开(公告)号：US5322591A
公开(公告)日：1994-06-21
申请号：US676773
申请日：1991-03-26
CPC分类号： C30B7/00 , C30B29/34 , Y10S117/902
摘要： The growth of bismuth silicate crystals occurs in a high pressure vessel or autoclave using a hydrothermal growth process. The nutrient material is placed in a sealed container of noble metal, liner, along with a solvent to a selected fill level. A filler fluid is also placed between the liner and the pressure vessel. The oriented seeds are placed in the cooler top seed zone over a baffle that slows the movement of supersaturated liquid from the hotter lower nutrient zone. Using a selected heating schedule for the top and the bottom zones, a plurality of large crystals are grown in the seed zone. The temperature differential is about 5.degree. C.
摘要翻译： 硅酸铋晶体的生长发生在使用水热生长工艺的高压容器或高压釜中。 将营养物质与贵金属，衬里以及溶剂的密封容器一起置于选定的填充水平。 填料流体也放置在衬套和压力容器之间。 将取向的种子放置在挡板上的较冷顶部种子区域中，该挡板减缓来自较热的较低营养区域的过饱和液体的运动。 对于顶部和底部区域使用选定的加热方案，在种子区域中生长多个大晶体。 温差约为5℃
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公开(公告)号：US5134261A
公开(公告)日：1992-07-28
申请号：US503494
申请日：1990-03-30
IPC分类号： F27B14/06 , F27B14/08 , F27B14/10 , F27D1/00 , F27D19/00 , F27D99/00 , H05B6/02 , H05B6/24 , H05B6/42
CPC分类号： H05B6/42 , F27B14/06 , F27B14/08 , F27D1/00 , H05B6/24 , F27B14/10 , F27D2019/0093 , F27D2099/002 , F27D2099/0026 , F27M2001/03 , Y10S117/90 , Y10T117/1092
摘要： A composite susceptor for a radio frequency (RF) heated crystal growing furnace has a plurality of stacked electrically insulating and electrically conducting elements about the crucible area so that a proper temperature gradient is established and controlled.
摘要翻译： 用于射频（RF）加热晶体生长炉的复合感受体在坩埚区域周围具有多个堆叠的电绝缘和导电元件，从而建立和控制适当的温度梯度。
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