公开(公告)号：US20050106320A1

公开(公告)日：2005-05-19

申请号：US10716006

申请日：2003-11-18

申请人： Mehran Mehregany ,  Christian Zorman ,  Xiao-An Fu ,  Jeremy Dunning

发明人： Mehran Mehregany ,  Christian Zorman ,  Xiao-An Fu ,  Jeremy Dunning

IPC分类号： B81B3/00 ,  C23C16/32 ,  C23C16/52 ,  G02B26/08 ,  H01L21/04 ,  B32B9/00 ,  C23C16/24

CPC分类号： C23C16/325

摘要： A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

摘要翻译： 公开了一种在衬底上沉积陶瓷膜，特别是碳化硅膜的方法，其中控制残余应力，残余应力梯度和电阻率。 还公开了具有具有这些受控特性的沉积膜和具有这些性质的器件的衬底，特别是MEMS和NEMS器件，具有具有这些性质的膜的衬底。

公开(公告)号：USRE42887E1

公开(公告)日：2011-11-01

申请号：US12548363

申请日：2009-08-26

申请人： Mehran Mehregany ,  Christian A. Zorman ,  Xiao-An Fu ,  Jeremy Dunning

发明人： Mehran Mehregany ,  Christian A. Zorman ,  Xiao-An Fu ,  Jeremy Dunning

IPC分类号： C23C16/00

CPC分类号： C23C16/325

摘要： A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

摘要翻译： 公开了一种在衬底上沉积陶瓷膜，特别是碳化硅膜的方法，其中控制残余应力，残余应力梯度和电阻率。 还公开了具有具有这些受控特性的沉积膜和具有这些性质的器件的衬底，特别是MEMS和NEMS器件，具有具有这些性质的膜的衬底。