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公开(公告)号:USRE42887E1
公开(公告)日:2011-11-01
申请号:US12548363
申请日:2009-08-26
IPC分类号: C23C16/00
CPC分类号: C23C16/325
摘要: A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.
摘要翻译: 公开了一种在衬底上沉积陶瓷膜,特别是碳化硅膜的方法,其中控制残余应力,残余应力梯度和电阻率。 还公开了具有具有这些受控特性的沉积膜和具有这些性质的器件的衬底,特别是MEMS和NEMS器件,具有具有这些性质的膜的衬底。
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公开(公告)号:US08153280B2
公开(公告)日:2012-04-10
申请号:US11736964
申请日:2007-04-18
IPC分类号: B32B9/00
CPC分类号: C23C16/325
摘要: A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.
摘要翻译: 公开了一种在衬底上沉积陶瓷膜,特别是碳化硅膜的方法,其中控制残余应力,残余应力梯度和电阻率。 还公开了具有具有这些受控特性的沉积膜和具有这些性质的器件的衬底,特别是MEMS和NEMS器件,具有具有这些性质的膜的衬底。
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公开(公告)号:US07261919B2
公开(公告)日:2007-08-28
申请号:US10716006
申请日:2003-11-18
IPC分类号: C23C16/00
CPC分类号: C23C16/325
摘要: A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.
摘要翻译: 公开了一种在衬底上沉积陶瓷膜,特别是碳化硅膜的方法,其中控制残余应力,残余应力梯度和电阻率。 还公开了具有具有这些受控特性的沉积膜和具有这些性质的器件的衬底,特别是MEMS和NEMS器件,具有具有这些性质的膜的衬底。
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公开(公告)号:US20110001143A1
公开(公告)日:2011-01-06
申请号:US11736964
申请日:2007-04-18
CPC分类号: C23C16/325
摘要: A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.
摘要翻译: 公开了一种在衬底上沉积陶瓷膜,特别是碳化硅膜的方法,其中控制残余应力,残余应力梯度和电阻率。 还公开了具有具有这些受控特性的沉积膜和具有这些性质的器件的衬底,特别是MEMS和NEMS器件,具有具有这些性质的膜的衬底。
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公开(公告)号:US6136243A
公开(公告)日:2000-10-24
申请号:US90526
申请日:1998-06-04
CPC分类号: B81C99/009 , B81C99/0085 , B81C2201/0132 , B81C2201/034
摘要: A method for molding high precision components is provided that allows inexpensive, rapid fabrication of components using a process involving a silicon substrate, in which the mold pattern is created using multiple mask layers, a deep reactive ion etch process and photolithographic patterning techniques.
摘要翻译: 提供了一种用于模制高精度部件的方法,其允许使用涉及硅衬底的工艺来廉价,快速地制造部件,其中使用多个掩模层制造模具图案,深反应离子蚀刻工艺和光刻图案化技术。
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