公开(公告)号：US11194951B1

公开(公告)日：2021-12-07

申请号：US17007135

申请日：2020-08-31

申请人： Mentor Graphics Corporation

发明人： Andrew Burbine ,  Germain Louis Fenger

IPC分类号： G06F30/33 ,  G06F30/398 ,  G03F1/36 ,  G06F30/394

摘要： A computing system implementing an optical proximity correction model verification tool can determine parameters for design patterns associated with an integrated circuit described in a layer file, and determine differences between the design patterns and calibration patterns utilized to calibrate an optical proximity correction (OPC) model configured to predict a printed image on a substrate corresponding to a layout design for the integrated circuit by determining distances between the determined parameters for the design patterns and parameters for the calibration patterns. The computing system can classify the design patterns with a modeling capability of the OPC model for the design patterns based on the differences between design patterns and the calibration patterns and possibly error rates of the OPC model associated with the calibration patterns or lithographic difficulty of the calibration patterns. The computing system can modify the layer file to include the classifications of the design patterns.

公开(公告)号：US11061373B1

公开(公告)日：2021-07-13

申请号：US16545601

申请日：2019-08-20

申请人： Mentor Graphics Corporation

发明人： Gurdaman Khaira ,  Germain Louis Fenger ,  Azat Latypov ,  John L. Sturtevant ,  Yuri Granik

IPC分类号： G05B13/04 ,  G03F7/20 ,  G05B13/02

摘要： A method and system for calculating probability of success or failure for a lithographic process due to stochastic variations of the lithographic process are disclosed. Lithography is a process that uses light to transfer a geometric pattern from a photomask, based on a layout design, to a resist on a substrate. The lithographic process is subject to random stochastic phenomena, such as photon shot noise and stochastic phenomena in the resist process and resist development, with the resulting stochastic randomness potentially becoming a major challenge. The stochastic phenomena are modeled using a stochastic model, such as a random field model, that models stochastic randomness the exposure and resist process. The stochastic model inputs light exposure and resist parameters and definitions of success of success or failure as to the lithographic process, and outputs a probability distribution function of deprotection concentration indicative of success or failure probability of the lithographic process. In turn, the probability distribution function may be used to modify one or both of the light exposure and resist parameters in order to reduce the effect of stochastic randomness on the lithographic process.

公开(公告)号：US11023644B1

公开(公告)日：2021-06-01

申请号：US16997312

申请日：2020-08-19

申请人： Mentor Graphics Corporation

发明人： Germain Louis Fenger ,  Andrew Burbine ,  Christopher Clifford

IPC分类号： G06F30/392 ,  G06F30/398 ,  G06F30/33

摘要： This application discloses a computing system implementing an optical proximity correction model calibration tool to determine parameters for gauges describing features of an integrated circuit. The gauges include values corresponding to measurements collected for a set of the features. The optical proximity correction model calibration tool can ascertain densities of the gauges based on the measurements associated with the parameters for the gauges, and set weights for the gauges based, at least in part, on the densities. The optical proximity correction model calibration tool can calibrate an optical proximity correction (OPC) model using the weights for the gauges. The OPC model calibrated with the weights of the gauges can be utilized to predict of a printed image on a substrate described by a mask layout design corresponding to the integrated circuit.