公开(公告)号：US11866554B2

公开(公告)日：2024-01-09

申请号：US18032192

申请日：2021-10-05

Applicant: Merck Patent GmbH

Inventor： Katsuchika Suzuki ,  Toshiya Okamura ,  Tetsuo Okayasu ,  Thorsten Vom Stein

IPC: C08G77/60 ,  B05D3/02 ,  C08G77/62 ,  B05D3/04

CPC classification number: C08G77/60 ,  B05D3/02 ,  B05D3/046 ,  B05D3/0466 ,  C08G77/62 ,  C08J2383/16

Abstract: To provide a new silicon-containing polymer making it possible to form a cured film has features that its residual stress is small and crack resistance is high. A polycarbosilazane having particular cyclic structures.

公开(公告)号：US11999827B2

公开(公告)日：2024-06-04

申请号：US17922800

申请日：2021-05-04

Applicant: Merck Patent GmbH

Inventor： Toshiya Okamura ,  Tetsuo Okayasu ,  Thorsten Vom Stein

IPC: C08G77/60 ,  C08G77/62 ,  C09D183/16

CPC classification number: C08G77/60 ,  C08G77/62 ,  C09D183/16

Abstract: [Problem] To provide a polycarbosilazane making it possible to form a silicon-containing film which is bearable to acid etching, and a composition comprising the polycarbosilazane. [Means for Solution] The present invention provides a polycarbosilazane comprising a repeating unit of —[R1R2Si—(CH2)n]— and —(R3R4Si—NR5)—, wherein R1, R2, R3 and R4 are each independently a single bond, hydrogen or C1-4 alkyl; R5 is independently a single bond or hydrogen; and n is 1-2, and a composition comprising the polycarbosilazane. The present invention also provides a method for forming a silicon-containing film, comprising coating the composition above a substrate and heating.