公开(公告)号：US07642102B2

公开(公告)日：2010-01-05

申请号：US11668572

申请日：2007-01-30

Applicant: Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

Inventor： Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

IPC: H01L21/66

CPC classification number: G01B11/0616 ,  G03F7/70491 ,  G03F7/70525 ,  G03F7/70608 ,  G03F7/70691

Abstract: The invention can provide a method of processing a wafer using a Real-Time Parameter Tuning (RTPT) procedure to receive an input message that can include a pass-through message, a real-time feedforward message, or a real-time optimization message, or any combination thereof. The RTPT procedures can use real-time wafer thickness data to create, modify, and/or use measurement recipe data, measurement profile data, and/or measurement model data. In addition, RTPT procedures can use real-time wafer thickness data to create, modify, and/or use process recipe data, process profile data, and/or process model data.

Abstract translation: 本发明可以提供使用实时参数调整（RTPT）程序来处理晶片的方法，以接收可以包括直通消息，实时前馈消息或实时优化消息的输入消息， 或其任何组合。 RTPT程序可以使用实时晶片厚度数据来创建，修改和/或使用测量配方数据，测量简档数据和/或测量模型数据。 此外，RTPT程序可以使用实时晶片厚度数据来创建，修改和/或使用过程配方数据，过程配置文件数据和/或过程模型数据。

公开(公告)号：US20080183312A1

公开(公告)日：2008-07-31

申请号：US11668537

申请日：2007-01-30

Applicant: Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

Inventor： Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

IPC: G05B13/02

CPC classification number: G05B19/41865 ,  G05B2219/32097 ,  G05B2219/45031 ,  G05B2219/45212 ,  Y02P90/20 ,  Y02P90/86

Abstract: The invention can provide a method of etch processing a wafer using a Real-Time Parameter Tuning (RTPT) procedure to receive an input message that can include a pass-through message, a real-time feedforward message, or a real-time optimization message, or any combination thereof. The RTPT procedures can use real-time wafer data to create, modify, and/or use etch recipe data, etch profile data, and/or etch model data. In addition, RTPT procedures can use real-time wafer data to create, modify, and/or use process recipe data, process profile data, and/or process model data.

Abstract translation: 本发明可以提供使用实时参数调整（RTPT）过程来蚀刻处理晶片的方法，以接收可以包括直通消息，实时前馈消息或实时优化消息的输入消息 ，或其任何组合。 RTPT程序可以使用实时晶片数据来创建，修改和/或使用蚀刻配方数据，蚀刻轮廓数据和/或蚀刻模型数据。 此外，RTPT程序可以使用实时晶片数据来创建，修改和/或使用过程配方数据，过程配置文件数据和/或过程模型数据。

公开(公告)号：US07801635B2

公开(公告)日：2010-09-21

申请号：US11668537

申请日：2007-01-30

Applicant: Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

Inventor： Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

IPC: G06F19/00

CPC classification number: G05B19/41865 ,  G05B2219/32097 ,  G05B2219/45031 ,  G05B2219/45212 ,  Y02P90/20 ,  Y02P90/86

Abstract: The invention can provide a method of etch processing a wafer using a Real-Time Parameter Tuning (RTPT) procedure to receive an input message that can include a pass-through message, a real-time feedforward message, or a real-time optimization message, or any combination thereof. The RTPT procedures can use real-time wafer data to create, modify, and/or use etch recipe data, etch profile data, and/or etch model data. In addition, RTPT procedures can use real-time wafer data to create, modify, and/or use process recipe data, process profile data, and/or process model data.

Abstract translation: 本发明可以提供使用实时参数调整（RTPT）过程来蚀刻处理晶片的方法，以接收可以包括直通消息，实时前馈消息或实时优化消息的输入消息 ，或其任何组合。 RTPT程序可以使用实时晶片数据来创建，修改和/或使用蚀刻配方数据，蚀刻轮廓数据和/或蚀刻模型数据。 此外，RTPT程序可以使用实时晶片数据来创建，修改和/或使用过程配方数据，过程配置文件数据和/或过程模型数据。

公开(公告)号：US07571074B2

公开(公告)日：2009-08-04

申请号：US11668690

申请日：2007-01-30

Applicant: Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

Inventor： Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

IPC: G01B11/02 ,  G06F17/40

CPC classification number: G01B11/0616 ,  G03F7/70491 ,  G03F7/70525 ,  G03F7/70608 ,  G03F7/70691

Abstract: A method for facilitating an ODP (optical digital profile) measurement of a semiconductor wafer. The method includes obtaining real time wafer characteristic data for a measurement site on the wafer and detecting a measured diffraction signal from a structure within the measurement site of the wafer. The measured diffraction signal is matched with a simulated diffraction signal stored in a wafer characteristic dependent profile library. A hypothetical profile structure associated with the simulated diffraction signal in the wafer characteristic dependent profile library is then identified. The real time wafer characteristic data is used to facilitate at least one of the matching and identifying. The real time wafer characteristic data may be real time wafer thickness data.

Abstract translation: 一种用于促进半导体晶片的ODP（光学数字图形）测量的方法。 该方法包括获得晶片上的测量位置的实时晶片特性数据，并从晶片的测量位置内的结构检测测得的衍射信号。 测量的衍射信号与存储在晶片特征依赖型谱库中的模拟衍射信号相匹配。 然后识别与晶片特性相关型材库中的模拟衍射信号相关联的假设轮廓结构。 实时晶片特征数据用于促进匹配和识别中的至少一个。 实时晶片特性数据可以是实时晶片厚度数据。

公开(公告)号：US20080183412A1

公开(公告)日：2008-07-31

申请号：US11668572

申请日：2007-01-30

Applicant: Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

Inventor： Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

IPC: G06F19/00

CPC classification number: G01B11/0616 ,  G03F7/70491 ,  G03F7/70525 ,  G03F7/70608 ,  G03F7/70691

Abstract: The invention can provide a method of processing a wafer using a Real-Time Parameter Tuning (RTPT) procedure to receive an input message that can include a pass-through message, a real-time feedforward message, or a real-time optimization message, or any combination thereof. The RTPT procedures can use real-time wafer thickness data to create, modify, and/or use measurement recipe data, measurement profile data, and/or measurement model data. In addition, RTPT procedures can use real-time wafer thickness data to create, modify, and/or use process recipe data, process profile data, and/or process model data.

Abstract translation: 本发明可以提供使用实时参数调整（RTPT）程序来处理晶片的方法，以接收可以包括直通消息，实时前馈消息或实时优化消息的输入消息， 或其任何组合。 RTPT程序可以使用实时晶片厚度数据来创建，修改和/或使用测量配方数据，测量简档数据和/或测量模型数据。 此外，RTPT程序可以使用实时晶片厚度数据来创建，修改和/或使用过程配方数据，过程配置文件数据和/或过程模型数据。

公开(公告)号：US20080183411A1

公开(公告)日：2008-07-31

申请号：US11668690

申请日：2007-01-30

Applicant: Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

Inventor： Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

IPC: G06F19/00

CPC classification number: G01B11/0616 ,  G03F7/70491 ,  G03F7/70525 ,  G03F7/70608 ,  G03F7/70691

Abstract: A method for facilitating an ODP measurement of a semiconductor wafer. The method includes obtaining real time wafer characteristic data for a measurement site on said wafer and detecting a measured diffraction signal from a structure within the measurement site of the wafer. The measured diffraction signal is matched with a simulated diffraction signal stored in a wafer characteristic dependent profile library. A hypothetical profile structure associated with the simulated diffraction signal in the wafer characteristic dependent profile library is then identified. The real time wafer characteristic data is used to facilitate at least one of the matching and identifying. The real time wafer characteristic data may be real time wafer thickness data.

Abstract translation: 一种用于促进半导体晶片的ODP测量的方法。 该方法包括获得在所述晶片上的测量位置的实时晶片特征数据，并且从晶片的测量位置内的结构检测测量的衍射信号。 测量的衍射信号与存储在晶片特征依赖型谱库中的模拟衍射信号相匹配。 然后识别与晶片特性相关型材库中的模拟衍射信号相关联的假设轮廓结构。 实时晶片特征数据用于促进匹配和识别中的至少一个。 实时晶片特性数据可以是实时晶片厚度数据。

公开(公告)号：US07324193B2

公开(公告)日：2008-01-29

申请号：US11396214

申请日：2006-03-30

Applicant: Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

Inventor： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

IPC: G06F15/18 ,  G06N3/08

CPC classification number: G01N21/95607 ,  G01N21/4788 ,  G01N21/9501 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology, the method includes obtaining a measured diffraction signal from a damaged periodic structure. A hypothetical profile of the damaged periodic structure is defined. The hypothetical profile having an undamaged portion, which corresponds to an undamaged area of a first material in the damaged periodic structure, and a damaged portion, which corresponds to a damaged area of the first material in the damaged periodic structure. The undamaged portion and the damaged portion have different properties associated with them. A simulated diffraction signal is calculated for the hypothetical damaged periodic structure using the hypothetical profile. The measured diffraction signal is compared to the simulated diffraction signal. If the measured diffraction signal and the simulated diffraction signal match within a matching criterion, then a damage amount for the damaged periodic structure is established based on the damaged portion of the hypothetical profile used to calculate the simulated diffraction signal.

Abstract translation: 一种使用光学测量法测量在半导体晶片上形成的损坏结构的方法，该方法包括从损坏的周期性结构获得测量的衍射信号。 定义损坏的周期结构的假设剖面。 具有未损坏部分的假想轮廓，其对应于损坏的周期性结构中的第一材料的未损坏区域，以及损坏部分，其对应于损坏的周期性结构中的第一材料的损坏区域。 未损伤部分和损坏部分具有与它们相关联的不同性质。 使用假设曲线计算假设损坏的周期性结构的模拟衍射信号。 将测得的衍射信号与模拟衍射信号进行比较。 如果测量的衍射信号和模拟衍射信号在匹配标准内匹配，则基于用于计算模拟衍射信号的假想轮廓的损坏部分建立损坏的周期性结构的损伤量。

公开(公告)号：US20070232045A1

公开(公告)日：2007-10-04

申请号：US11394592

申请日：2006-03-30

Applicant: Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

Inventor： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

IPC: H01L21/44

CPC classification number: H01L21/76811 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76813 ,  H01L22/12

Abstract: A method of assessing damage of a dual damascene structure includes obtaining a wafer after the wafer has been processed using a dual damascene process. A first damage-assessment procedure is performed on the wafer using an optical metrology process to gather damage-assessment data for a first set of measurements sites on the wafer. For each measurement site in the first set of measurement sites, the optical metrology process determines an amount of damage of a damaged area of a periodic grating in the measurement site. The damage-assessment data includes the amount of damage determined by the optical metrology process. A first damage-assessment map is created for the dual damascene process. The first damage-assessment includes the damage-assessment data and the locations of the first set of measurement sites on the wafer. One or more values in the damage-assessment map are compared to damage-assessment limits established for the dual damascene process to identify the wafer as a damaged or undamaged wafer.

Abstract translation: 评估双镶嵌结构的损伤的方法包括在使用双镶嵌工艺处理晶片之后获得晶片。 使用光学测量过程在晶片上执行第一损伤评估程序以收集晶片上的第一组测量位置的损伤评估数据。 对于第一组测量点中的每个测量位置，光学测量过程确定测量位置中周期性光栅的损坏区域的损伤量。 损伤评估数据包括由光学计量过程确定的损伤量。 为双镶嵌工艺创建了第一个损伤评估图。 第一次损伤评估包括损伤评估数据和晶片上第一组测量位置的位置。 将损伤评估图中的一个或多个值与为双镶嵌工艺建立的损伤评估限制进行比较，以将晶片识别为损坏或未损坏的晶片。

公开(公告)号：US07576851B2

公开(公告)日：2009-08-18

申请号：US11395636

申请日：2006-03-30

Applicant: Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

Inventor： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

IPC: G01P3/36

CPC classification number: G01N21/95607

Abstract: A method of creating a library for measuring a plurality of damaged structures formed on a semiconductor wafer using optical metrology includes directing an incident beam on a first damaged structure. The first damaged structure was formed by modifying at least one process parameter in a dual damascene procedure. A diffracted beam is received from the first damaged structure. A measured diffraction signal is obtained based on the received diffracted beam. A first simulated diffraction signal is calculated. The first simulated diffraction signal corresponds to a hypothetical profile of the first damaged structure. The hypothetical profile includes an undamaged dielectric portion and a damaged dielectric portion. The measured diffraction signal is compared to the first simulated diffraction signal. If the measured diffraction signal and the first simulated diffraction signal match within a matching criterion, then the first simulated diffraction signal, the hypothetical profile of the first damaged structure, and an amount of dielectric damage corresponding to the damaged dielectric portion of the hypothetical profile are stored in a library.

Abstract translation: 使用光学测量法创建用于测量形成在半导体晶片上的多个损坏结构的库的方法包括将入射光束引导到第一损坏结构上。 通过在双镶嵌程序中修改至少一个工艺参数来形成第一个损坏的结构。 从第一损坏结构接收衍射光束。 基于接收的衍射光束获得测量的衍射信号。 计算第一个模拟衍射信号。 第一模拟衍射信号对应于第一损坏结构的假想轮廓。 假想轮廓包括未损坏的电介质部分和损坏的电介质部分。 将测量的衍射信号与第一模拟衍射信号进行比较。 如果测量的衍射信号和第一模拟衍射信号在匹配标准内匹配，则第一模拟衍射信号，第一损坏结构的假想轮廓和对应于假想轮廓损坏的介质部分的介电损伤量是 存储在库中。

公开(公告)号：US20070233404A1

公开(公告)日：2007-10-04

申请号：US11395636

申请日：2006-03-30

Applicant: Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

Inventor： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

IPC: G06F19/00 ,  G01N21/00

CPC classification number: G01N21/95607

Abstract: A method of creating a library for measuring a plurality of damaged structures formed on a semiconductor wafer using optical metrology includes directing an incident beam on a first damaged structure. The first damaged structure was formed by modifying at least one process parameter in a dual damascene procedure. A diffracted beam is received from the first damaged structure. A measured diffraction signal is obtained based on the received diffracted beam. A first simulated diffraction signal is calculated. The first simulated diffraction signal corresponds to a hypothetical profile of the first damaged structure. The hypothetical profile includes an undamaged dielectric portion and a damaged dielectric portion. The measured diffraction signal is compared to the first simulated diffraction signal. If the measured diffraction signal and the first simulated diffraction signal match within a matching criterion, then the first simulated diffraction signal, the hypothetical profile of the first damaged structure, and an amount of dielectric damage corresponding to the damaged dielectric portion of the hypothetical profile are stored in a library.

Abstract translation: 使用光学测量法创建用于测量形成在半导体晶片上的多个损坏结构的库的方法包括将入射光束引导到第一损坏结构上。 通过在双镶嵌程序中修改至少一个工艺参数来形成第一个损坏的结构。 从第一损坏结构接收衍射光束。 基于接收的衍射光束获得测量的衍射信号。 计算第一个模拟衍射信号。 第一模拟衍射信号对应于第一损坏结构的假想轮廓。 假想轮廓包括未损坏的电介质部分和损坏的电介质部分。 将测量的衍射信号与第一模拟衍射信号进行比较。 如果测量的衍射信号和第一模拟衍射信号在匹配标准内匹配，则第一模拟衍射信号，第一损坏结构的假想轮廓和对应于假想轮廓损坏的介质部分的介电损伤量是 存储在库中。