公开(公告)号：US11784287B2

公开(公告)日：2023-10-10

申请号：US17331306

申请日：2021-05-26

Applicant: Meta Platforms Technologies, LLC

Inventor： Alexander Tonkikh ,  Michael Grundmann ,  Alexander Franke

IPC: H01L33/24 ,  H01L33/06 ,  H01L33/30 ,  H01L33/46

CPC classification number: H01L33/24 ,  H01L33/06 ,  H01L33/30 ,  H01L33/46

Abstract: A micro-light emitting diode includes a mesa structure that includes a first set of one or more semiconductor layers, an active layer configured to emit light, a second set of one or more semiconductor layers on the active layer, and a dielectric layer in sidewall regions of the mesa structure. A center region of the second set of one or more semiconductor layers is thicker than a sidewall region of the second set of one or more semiconductor layers, such that a distance from a surface of the sidewall region of the second set of one or more semiconductor layers to the active layer is less than a distance from a surface of the center region of the second set of one or more semiconductor layers to the active layer, thereby forming a surface potential-induced lateral potential barrier at a sidewall region of the active layer.