公开(公告)号：US12148863B2

公开(公告)日：2024-11-19

申请号：US17703578

申请日：2022-03-24

Applicant: Meta Platforms Technologies, LLC

Inventor： Alexander Tonkikh ,  Salim Boutami ,  Sophia Antonia Fox

IPC: H01L33/44 ,  H01L27/15 ,  H01L33/00 ,  H01L33/24 ,  H01L33/30 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62

Abstract: A micro-light emitting diode includes a semiconductor mesa structure that includes at least a portion of an n-type semiconductor layer, an active region configured to emit visible light, and a p-type semiconductor layer. The micro-LED device also includes an insulator layer that includes an undoped semiconductor passivation layer grown on sidewalls of the semiconductor mesa structure, and a dielectric passivation layer characterized by a refractive index lower than a refractive index of the undoped semiconductor passivation layer. The micro-LED device further includes a reflective metal layer deposited on the dielectric passivation layer, and a micro-lens configured to collimate the visible light emitted by the active region, where a ratio between a width of the micro-lens and a width of the active region may be greater than about 1.5.

公开(公告)号：US20230307584A1

公开(公告)日：2023-09-28

申请号：US17703578

申请日：2022-03-24

Applicant: Meta Platforms Technologies, LLC

Inventor： Alexander Tonkikh ,  Salim Boutami ,  Sophia Antonia Fox

IPC: H01L33/44 ,  H01L33/00 ,  H01L33/24 ,  H01L33/30 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L27/15

CPC classification number: H01L33/44 ,  H01L33/0062 ,  H01L33/24 ,  H01L33/30 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L27/156 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A micro-light emitting diode includes a semiconductor mesa structure that includes at least a portion of an n-type semiconductor layer, an active region configured to emit visible light, and a p-type semiconductor layer. The micro-LED device also includes an insulator layer that includes an undoped semiconductor passivation layer grown on sidewalls of the semiconductor mesa structure, and a dielectric passivation layer characterized by a refractive index lower than a refractive index of the undoped semiconductor passivation layer. The micro-LED device further includes a reflective metal layer deposited on the dielectric passivation layer, and a micro-lens configured to collimate the visible light emitted by the active region, where a ratio between a width of the micro-lens and a width of the active region may be greater than about 1.5.

公开(公告)号：US11784287B2

公开(公告)日：2023-10-10

申请号：US17331306

申请日：2021-05-26

Applicant: Meta Platforms Technologies, LLC

Inventor： Alexander Tonkikh ,  Michael Grundmann ,  Alexander Franke

IPC: H01L33/24 ,  H01L33/06 ,  H01L33/30 ,  H01L33/46

CPC classification number: H01L33/24 ,  H01L33/06 ,  H01L33/30 ,  H01L33/46

Abstract: A micro-light emitting diode includes a mesa structure that includes a first set of one or more semiconductor layers, an active layer configured to emit light, a second set of one or more semiconductor layers on the active layer, and a dielectric layer in sidewall regions of the mesa structure. A center region of the second set of one or more semiconductor layers is thicker than a sidewall region of the second set of one or more semiconductor layers, such that a distance from a surface of the sidewall region of the second set of one or more semiconductor layers to the active layer is less than a distance from a surface of the center region of the second set of one or more semiconductor layers to the active layer, thereby forming a surface potential-induced lateral potential barrier at a sidewall region of the active layer.

公开(公告)号：US11848194B2

公开(公告)日：2023-12-19

申请号：US17319936

申请日：2021-05-13

Applicant: Meta Platforms Technologies, LLC

Inventor： Alexander Tonkikh ,  Guillaume Lheureux ,  Markus Broell ,  Berthold Hahn

IPC: H01L33/30 ,  H01L33/00 ,  H01L33/38 ,  H01L33/06 ,  H01L33/08

CPC classification number: H01L33/06 ,  H01L33/0062 ,  H01L33/08 ,  H01L33/30 ,  H01L33/38 ,  H01L2933/0016

Abstract: A lateral micro-light emitting diode includes a first semiconductor layer, an active region on the first semiconductor layer and including one or more quantum well layers configured to emit light, a p-type semiconductor region on a first lateral region (e.g., a central region) of the active region, and an n-type semiconductor region on a second lateral region (e.g., peripheral regions) of the active region, where the n-type semiconductor region and the p-type semiconductor region are on a same side of the active region.